Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: A method for manufacturing and packaging a special-shaped cigarette includes the following steps: designing inner packaging case paper capable of being folded into a special-shaped cigarette accommodating cavity; folding the inner packaging case paper to form the special-shaped cigarette accommodating cavity; filling an interior of the special-shaped cigarette accommodating cavity with an ordinary cigarette; and shelving for a certain period of time, so that a cross section of the ordinary cigarette changes from a circle to a special shape, and the ordinary cigarette is accommodated in the special-shaped cigarette accommodating cavity. A diameter of an inscribed circle of the special-shaped cigarette accommodating cavity is less than a diameter of the ordinary cigarette, and a material of the inner packaging case paper is a paperboard or a food grade PVC sheet.

Abstract: Disclosed are a red light and near-infrared light-emitting material and a preparation method thereof, and a light-emitting device including the light-emitting material. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, aSc2O3·Ga2O3·bR2O3, wherein the element R includes one or two of Cr, Ni, Fe, Yb, Nd or Er; 0.001?a?0.6; and 0.001?b?0.1. The light-emitting material can be excited by a spectrum having a wide wavelength range (ultraviolet light or purple light or blue light) to emit light with a wide spectrum of 650 nm to 1700 nm or multiple spectra, thus having higher light-emitting intensity.

Abstract: An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.

Abstract: The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 ?m?R?40 ?m; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as rinner.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A method for manufacturing and packaging a special-shaped cigarette includes the following steps: designing inner packaging case paper capable of being folded into a special-shaped cigarette accommodating cavity; folding the inner packaging case paper to form the special-shaped cigarette accommodating cavity; filling an interior of the special-shaped cigarette accommodating cavity with an ordinary cigarette; and shelving for a certain period of time, so that a cross section of the ordinary cigarette changes from a circle to a special shape, and the ordinary cigarette is accommodated in the special-shaped cigarette accommodating cavity. A diameter of an inscribed circle of the special-shaped cigarette accommodating cavity is less than a diameter of the ordinary cigarette, and a material of the inner packaging case paper is a paperboard or a food grade PVC sheet.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: An integrated circuit includes an inductor that includes a first set of conductors in at least a first metal layer, and a guard ring enclosing the inductor. The guard ring includes a first conductor extending in a first direction, a second conductor extending in a second direction, and a first set of staggered conductors coupled to a first end of the first conductor and a first end of the second conductor. The first set of staggered conductors includes a second set of conductors in a second metal layer, a third set of conductors in a third metal layer and a first set of vias coupling the second set of conductors with the third set of conductors. The third metal layer is above the second metal layer. All metal lines in the second metal layer that are part of the guard ring extend in the first direction.

Abstract: Provided are semiconductor devices that include a first gate structure having a first end cap portion, a second gate structure having a second end cap portion coaxial with the first gate structure, a first dielectric region separating the first end cap portion and the second end cap portion, a first conductive element extending over the first gate structure, a second conductive element extending over the second gate structure, and a gate via electrically connecting the second gate structure and the second conductive element, with the first dielectric region having a first width and being positioned at least partially under the first conductive element and defines a spacing between the gate via and an end of the second end cap portion that exceeds a predetermined distance.

Abstract: The present disclosure provides a radiation inspection system, including a container respectively provided with an entrance and an exit on opposite side walls thereof; and a radiation scanning imaging device disposed in the container and having an inspection channel. The radiation scanning imaging device includes a ray source, the ray source includes ray generators, and ray generators are configured to emit ray beams at different angles, so that the radiation scanning imaging device performs radiation scanning inspection on an object to be inspected passing through the inspection channel from the entrance to the exit.

Abstract: Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.

Abstract: An amlodipine dry suspension, comprising a diluent, a suspending aid, etc. and being free of surfactants. A preparation method therefor comprises the following steps: a) preparing an aqueous mixture 1 containing amlodipine besylate by using a high-speed homogenization method; b) adding sodium benzoate to the mixture 1, and homogenizing same at a high speed to obtain a mixture 2; and c) granulating the mixture 2 and other components, and then drying same. The raw materials are homogenized and mixed at a high speed, no surfactant is added during the preparation, amlodipine is fully wetted by using a high-speed homogenization process, prescription components are simplified, and the amlodipine dry suspension is more suitable for children to use. Compared with ultrasonic stirring, scaled-up and industrial production are easier to realize for the high-speed homogenization process, and at the same time, the preparation is good in stability and convenient to carry.

Abstract: Embodiments of this application provide a composite structure including a substrate layer and a functional layer disposed on a surface of at least one side of the substrate layer. The substrate layer includes a first support member and a second support member that are disposed side by side and a bendable connecting member connected to and disposed between the first support member and the second support member. A material of the first support member and the second support member includes a hard rubber fiber composite material, and the functional layer includes one or more of an electrically conductive layer, a thermally conductive layer, or an impact-resistant layer.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The processing chamber is configured to perform a lithography exposure process on a semiconductor wafer. The method also includes fixing the particle attracting member on a reticle holder in the processing chamber in a cleaning cycle, attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer, and loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. The method also includes loading the semiconductor wafer into the processing chamber, and performing the lithography exposure process on the semiconductor wafer in the processing chamber using a reticle fixed on the reticle holder after the cleaning cycle.

Abstract: An apparatus to facilitate data prefetching is disclosed. The apparatus includes a cache, one or more execution units (EUs) to execute program code, prefetch logic to maintain tracking information of memory instructions in the program code that trigger a cache miss and compiler logic to receive the tracking information, insert one or more pre-fetch instructions in updated program code to prefetch data from a memory for execution of one or more of the memory instructions that triggered a cache miss and download the updated program code for execution by the one or more EUs.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: A semiconductor device package includes a carrier, an electronic component, a connection element and an encapsulant. The electronic component is disposed on a surface of the carrier. The connection element is disposed on the surface and adjacent to an edge of the carrier. The encapsulant is disposed on the surface of the carrier. A portion of the connection element is exposed from an upper surface and an edge of the encapsulant.