Patents by Inventor Yuan Hong
Yuan Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984465Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.Type: GrantFiled: August 9, 2022Date of Patent: May 14, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
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Publication number: 20240145630Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.Type: ApplicationFiled: October 31, 2023Publication date: May 2, 2024Inventors: Minyou HE, Xiaoliang LIU, Qing WANG, Ling-Yuan HONG, Chung-Ying CHANG
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Publication number: 20240073179Abstract: A network control method is configured to balance the loading of a plurality of processes. The method includes obtaining an IP address of a packet; deleting a portion of bits of the IP address to generate a series according to an IP address entropy distribution; performing a hash function to the series to generate a hash value; performing a modulo operation to the hash value to obtain a remainder; and assigning the packet to a processor of the plurality of processes corresponding to the remainder.Type: ApplicationFiled: August 20, 2023Publication date: February 29, 2024Inventor: YUAN HONG
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Patent number: 11862752Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.Type: GrantFiled: July 2, 2021Date of Patent: January 2, 2024Assignee: Quanzhou San'an Semiconductor Technology Co., Ltd.Inventors: Qing Wang, Dazhong Chen, Sheng-Hsien Hsu, Ling-yuan Hong, Kang-Wei Peng, Su-hui Lin, Chia-Hung Chang
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Publication number: 20230337795Abstract: A method for manufacturing a luggage formed by composite material includes the steps: A) using a vacuum molding method to make a thermoplastic sheet into a shell; B) placing the shell in an inner cavity mold area of a heating mold to correspond the outer surface of the shell to the inner wall surface of the inner cavity mold area; C) setting the outer surface of the thermosetting carbon fiber plastic layer on the inner surface of the shell ; D) setting the reinforcing layer on the inner surface of the thermosetting carbon fiber plastic layer at the location corresponding to the corner of the shell; and E) placing an airbag in the receiving area of the shell and inflating the airbag to support the inner surface of the thermosetting carbon fiber plastic layer and the reinforcing layer.Type: ApplicationFiled: July 3, 2023Publication date: October 26, 2023Inventors: Yuan-Hong LIAO, Su-Chun WU
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Publication number: 20230343903Abstract: A face-up light-emitting device includes a substrate, a semiconductor stacked structure, and a first insulating stacked structure. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor stacked structure is disposed on the first surface and is capable of emitting light. The first insulating stacked structure is disposed on the semiconductor stacked structure and includes first material layers each of which has a refractive index, and second material layers each of which has a refractive index higher than that of each of the first material layers. The first insulating stacked structure has a geometric thickness ranging from 500 nm to 1000 nm. The first material layers and the second material layers are stacked alternately. A display device including the face-up light-emitting device is also disclosed.Type: ApplicationFiled: April 12, 2023Publication date: October 26, 2023Inventors: Qing WANG, Huining WANG, Hongwei XIA, Peng LIU, Chao LU, Ling-Yuan HONG, Chung-Ying CHANG
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Publication number: 20230290907Abstract: A light-emitting device includes a light-emitting element including an epitaxial structure and a DBR. The DBR includes first and second reflective units. The first reflective unit includes first reflective structures. The second reflective unit includes second reflective structures. Each of the first and second reflective structures has first and second material layers. The first material layer of each of the first reflective structures has an optical thickness different from that of the first material layer of each of the second reflective structures. The second material layer of each of the first reflective structures has an optical thickness different from that of the second material layer of each of the second reflective structures. In each of the first and second reflective structures, the first material layer has a refractive index different from that of the second material layer.Type: ApplicationFiled: May 18, 2023Publication date: September 14, 2023Inventors: Qing WANG, Wei LI, Minyou HE, Shiwei LIU, Ling-yuan HONG, Su-hui LIN, Chung-ying CHANG
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Publication number: 20230273994Abstract: A method, system and apparatus are disclosed. According to one or more embodiments, a data node is provided. The data node includes processing circuitry configured to: receive an anomaly estimation for a first privatized dataset, the first private dataset being based on a dataset and a first noise profile, apply a second noise profile to the dataset to generate a second privatized dataset, the second noise profile being based at least on the anomaly estimation, and optionally cause transmission of the second privatized dataset for anomaly estimation.Type: ApplicationFiled: July 16, 2021Publication date: August 31, 2023Inventors: Meisam MOHAMMADY, Mengyuan ZHANG, Yosr JARRAYA, Makan POURZANDI, Han WANG, Yuan Hong, Lingyu WANG, Suryadipta MAJUMDAR, Mourad DEBBABI
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Publication number: 20230268466Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.Type: ApplicationFiled: April 24, 2023Publication date: August 24, 2023Inventors: Xiaoliang LIU, Anhe HE, Kang-wei PENG, Su-hui LIN, Ling-yuan HONG, Chia-hung CHANG
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Publication number: 20230253531Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The semiconductor light-emitting stack includes, in sequence from bottom to top, a second conductivity type semiconductor layer, a light-emitting layer, and a first conductivity type semiconductor layer. The transparent conductive layer is disposed on the first conductivity type semiconductor layer, and is formed with a first opening which is defined by an inner edge of the transparent conductive layer. The first current blocking layer is formed on the first conductivity type semiconductor layer. The first electrode pad is formed on and in contact with both the first current blocking layer and on the first conductivity type semiconductor layer. The first electrode pad has a width not greater than a dimension of the first opening.Type: ApplicationFiled: April 7, 2023Publication date: August 10, 2023Inventors: GONG CHEN, SU-HUI LIN, SHENG-HSIEN HSU, MINYOU HE, KANG-WEI PENG, LING-YUAN HONG
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Patent number: 11721789Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.Type: GrantFiled: June 13, 2022Date of Patent: August 8, 2023Inventors: Jiangbin Zeng, Anhe He, Ling-yuan Hong, Kang-Wei Peng, Su-hui Lin, Chia-Hung Chang
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Publication number: 20230178689Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting stack and an insulating light-transmissive layer. The semiconductor light-emitting stack includes an active layer and has a light-emitting surface. The insulating light-transmissive layer is disposed on the light-emitting surface and includes a base and a grade index structure. The base has a first refractive index. The grade index structure is disposed on the base in a way that the base is disposed between the semiconductor light-emitting stack and the graded index structure. The graded index structure includes at least two films and has a gradually varying refractive index which gradually decrease in a direction away from the base, and which is greater than the first refractive index. A light-emitting apparatus including the semiconductor light-emitting device and a sealing resin is also provided.Type: ApplicationFiled: February 3, 2023Publication date: June 8, 2023Inventors: Qing WANG, Quanyang MA, Dazhong CHEN, Gong CHEN, Ling-yuan HONG, Kang-Wei PENG, Su-hui LIN
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Patent number: 11637223Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.Type: GrantFiled: October 6, 2020Date of Patent: April 25, 2023Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Xiaoliang Liu, Anhe He, Kang-wei Peng, Su-hui Lin, Ling-yuan Hong, Chia-hung Chang
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Patent number: 11637218Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.Type: GrantFiled: December 22, 2020Date of Patent: April 25, 2023Assignee: Xiamen San'an Optoelectronics Co., Ltd.Inventors: Gong Chen, Su-Hui Lin, Sheng-Hsien Hsu, Minyou He, Kang-Wei Peng, Ling-Yuan Hong
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Publication number: 20230078225Abstract: A flip-chip LED device includes an epitaxial structure, a first contact electrode, and a second contact electrode. The second contact electrode is disposed on the epitaxial structure and extending toward the first contact electrode. The second contact electrode includes a first curved extension, a second curved extension, a connecting portion, a first straight extension, and a second straight extension. The connecting portion is connected to the first curved extension and to the second curved extension. The first straight extension is connected to the first curved extension. The second straight extension is connected to the second curved extension.Type: ApplicationFiled: September 9, 2022Publication date: March 16, 2023Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Zhanggen XIA, Peng LIU, Min HUANG, Guangyao WU, Ling-Yuan HONG, Chung-Ying CHANG
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Publication number: 20230077302Abstract: A flip-chip light-emitting device includes a light-emitting unit, a first electrode, and a second electrode. The light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode is disposed on the light-emitting unit and electrically connected to the first type semiconductor layer. The second electrode is disposed on the light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode or the second electrode is free of gold, and includes an aluminum layer and at least one platinum layer disposed on the aluminum layer opposite to the light-emitting unit.Type: ApplicationFiled: September 7, 2022Publication date: March 9, 2023Applicant: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Min HUANG, Yu ZHAN, Zhanggen XIA, Ling-Yuan HONG, Su-Hui LIN, Chung-Ying CHANG
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Publication number: 20230076695Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.Type: ApplicationFiled: November 15, 2022Publication date: March 9, 2023Inventors: Su-hui LIN, Feng WANG, Ling-yuan HONG, Sheng-Hsien HSU, Sihe CHEN, Dazhong CHEN, Kang-Wei PENG, Chia-Hung CHANG
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Publication number: 20230024758Abstract: A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.Type: ApplicationFiled: September 29, 2022Publication date: January 26, 2023Inventors: Qing WANG, Quanyang MA, Jiangbin ZENG, Dazhong CHEN, Ling-Yuan HONG, Kang-Wei PENG, Su-Hui LIN
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Publication number: 20230017727Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.Type: ApplicationFiled: September 15, 2022Publication date: January 19, 2023Inventors: SU-HUI LIN, YU-CHIEH HUANG, FENG WANG, ANHE HE, QING WANG, XIUSHAN ZHU, KANG-WEI PENG, LING-YUAN HONG
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Publication number: 20230006096Abstract: A semiconductor light-emitting device includes a light-transmissible substrate, and a semiconductor light-emitting stack. The light-transmissible substrate is made of a first material, and has a first surface and a second surface opposite to the first surface. The first surface has a first region, and a second region which is formed with a plurality of protruding portions and a plurality of recessed portions formed therebetween. The recessed portions are disposed at a level lower than that of the first region relative to the second surface. The semiconductor light-emitting stack is disposed on the first region of the first surface along a stacking direction.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Gong CHEN, Sheng-Hsien HSU, Su-Hui LIN, Kang-Wei PENG, Ling-Yuan HONG, Minyou HE