Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.

Abstract: A light-emitting diode and a light-emitting device are provided, relating to the field of semiconductor manufacturing, including a substrate, an epitaxial structure and a Bragg reflective layer. The Bragg reflective layer includes a first film stack and a second film stack alternately and repetitively arranged. The first film stack and the second film stack both include a first material layer with a first refractive index and a second material layer with a second refractive index, the first material layer and the second material layer are alternately stacked repeatedly, and the first refractive index is lower than the second refractive index. In the first film stack, an optical thickness of the first material layer is greater than that of the second material layer. In the second film stack, an optical thickness of the first material layer is less than that of the second material layer.

Abstract: A light-emitting diode and a light-emitting device are provided, the light-emitting diode includes a substrate, an epitaxial structure and a Bragg reflector. The Bragg reflector includes first film stacks and second film stacks repeatedly and alternately stacked. The first film stack includes at least one pair layer consisting of a first material layer and a second material layer, an optical thickness of the first material layer is greater than that of the second material layer in each pair layer. The second film stack includes multiple pair layers consisting of a first material layer and a second material layer; and the second film stack is formed by repeatedly and alternately stacking a pair layer with optical thickness of the first material layer greater than that of the second material layer and a pair layer with optical thickness of the first material layer smaller than that of the second material layer.

Abstract: Apparatuses, system, and techniques use one or more neural networks to generate a modified bounding box based, at least in part, on one or more second bounding boxes.

Abstract: Various examples relate to translating image labels from one domain (e.g., a synthetic domain) to another domain (e.g., a real-world domain) to improve model performance on real-world datasets and applications. Systems and methods are disclosed that provide an unsupervised label translator that may employ a generative adversarial network (GAN)-based approach. In contrast to conventional systems, the disclosed approach can employ a data-centric perspective that addresses systematic mismatches between datasets from different sources.

Abstract: Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a transport system; the atmosphere control unit provides a gas environment with low water, oxygen and nitrogen; the transport system transports a plurality of target objects after high-temperature purification by the annealing unit to the atmosphere control unit; after assembling silicon carbide seed crystal and silicon carbide powder in a graphite crucible and covering with thermal insulation material to form a container inside the atmosphere control unit, the transport system transports the container to the crystal growth unit. The method uses a weighing system in a chamber of the crystal growth unit to detect a weight change of silicon carbide seed crystal and silicon carbide powder during a crystal growth process through a plurality of weight sensors of the weighing system.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: An optoelectronic system having a first optoelectronic element with a first surface; a second optoelectronic element with a second surface; an IC, with a third surface coplanar with the first surface and the second surface; an electrical connection, electrically connecting the first optoelectronic element and the IC; and a material, surrounding the first optoelectronic element, the second optoelectronic element, and the IC, and exposing the first surface, the second surface, and the third surface.

Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A network control method is configured to balance the loading of a plurality of processes. The method includes obtaining an IP address of a packet; deleting a portion of bits of the IP address to generate a series according to an IP address entropy distribution; performing a hash function to the series to generate a hash value; performing a modulo operation to the hash value to obtain a remainder; and assigning the packet to a processor of the plurality of processes corresponding to the remainder.

Abstract: A luggage with composite material integrally formed frame includes a first shell, a second shell, a first frame, and a second frame. The second shell is openably assembled to the first shell. The first frame is integrated with the first shell and is located on the outer edge of the first shell. The second frame is integrally formed with the second shell and located on an outer edge of the second shell. When the first shell and the second shell are closed, the protruding engagement member of the second frame is engaged in the recessed engagement groove of the first frame.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: An application of a compound having a structure represented by chemical formula 1, a pharmaceutically acceptable salt thereof, a solvate thereof, a solvate of the pharmaceutically acceptable salt thereof, or a crystal form thereof, in particular an application thereof in the preparation of an inhibitory drug targeting an ErbB2 mutant. The provided compound has inhibitory activity against the ErbB2 mutant, and can effectively inhibit proliferation of ErbB2 mutation tumor cells.

Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.

Abstract: A network control method is configured to balance the loading of a plurality of processes. The method includes obtaining an IP address of a packet; deleting a portion of bits of the IP address to generate a series according to an IP address entropy distribution; performing a hash function to the series to generate a hash value; performing a modulo operation to the hash value to obtain a remainder; and assigning the packet to a processor of the plurality of processes corresponding to the remainder.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A face-up light-emitting device includes a substrate, a semiconductor stacked structure, and a first insulating stacked structure. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor stacked structure is disposed on the first surface and is capable of emitting light. The first insulating stacked structure is disposed on the semiconductor stacked structure and includes first material layers each of which has a refractive index, and second material layers each of which has a refractive index higher than that of each of the first material layers. The first insulating stacked structure has a geometric thickness ranging from 500 nm to 1000 nm. The first material layers and the second material layers are stacked alternately. A display device including the face-up light-emitting device is also disclosed.