Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A semiconductor light-emitting device includes a light-transmissible substrate, and a semiconductor light-emitting stack. The light-transmissible substrate is made of a first material, and has a first surface and a second surface opposite to the first surface. The first surface has a first region, and a second region which is formed with a plurality of protruding portions and a plurality of recessed portions formed therebetween. The recessed portions are disposed at a level lower than that of the first region relative to the second surface. The semiconductor light-emitting stack is disposed on the first region of the first surface along a stacking direction.

Abstract: A light-emitting diode chip includes a light-emitting unit, a first electrode, an insulating layer, and a second electrode. The first electrode is disposed on the light-emitting unit. The insulating layer is disposed on the first electrode and the light-emitting unit, and has a through hole and a hole-defining wall. The hole-defining wall has a top peripheral edge that has two opposite end points. A projection of at least one of the end points of the top peripheral edge on the light-emitting unit falls outside a projection of a top surface of the first electrode on the light-emitting unit. The second electrode is disposed on the insulating layer and fills the through hole to electrically connect to the first electrode.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A high-voltage flip-chip semiconductor light-emitting device includes a substrate, at least two semiconductor light-emitting units, an isolation trench, a conducting layer, an isolating layer, a connecting layer, and a Bragg reflection layer. The semiconductor light-emitting units and the conducting layer are sequentially disposed on the substrate. The isolation trench is formed between the semiconductor light-emitting units. The isolating layer partially covers the conducting layer. The connecting layer is disposed on the isolating layer and electrically connects the semiconductor light-emitting units. The Bragg reflection layer covers the connecting layer and the isolating layer.

Abstract: A method for manufacturing a luggage includes the steps: A) making a thermoplastic sheet into a shell, B) placing the shell body of the shell in an inner concave mold area of a heating mold and setting the shell edge of the shell to a frame mold area of the heating mold to correspond the outer surface of the shell to an inner wall surface of the heating mold, C) setting the outer surface of the thermoset carbon fiber plastic layer on the inner surface of the shell, D) setting the filling layer on the inner surface of the thermoset carbon fiber plastic layer within the frame mold area, E) expanding an air bag to the thermoset carbon fiber plastic layer and the filling layer and heating a heating mold, so that the shell, the thermoset carbon fiber plastic layer and the filling layer are combined with each other.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure and is electrically connected to the electrode unit. The anti-adsorption layer has an adsorption capacity for at least one of gaseous contaminants and particulate contaminants which is lower than that of the electrode unit. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure disposed on the substrate, and first and second electrode units disposed on the epitaxial structure. The first and second electrode units are electrically connected to first and second semiconductor layers of the epitaxial structure, respectively. A surface of the epitaxial structure opposite to the substrate has an operating zone to be pushed by an ejector pin during a packaging process. A projection of the second electrode unit on the substrate bypasses a projection of the operating zone on the substrate, and extends toward the first electrode unit.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A method, system and apparatus are disclosed. In one or more embodiments, a differential privacy, DP, node is provided. The DP node includes processing circuitry configured to: receive a query request; receive a first input corresponding to a utility parameter; receive a second input corresponding to a privacy parameter; select a baseline DP mechanism type based at least on a query request type of the query request, the first input and the second input, where the baseline DP mechanism type includes at least a noise parameter; generate a noise distribution based on the baseline DP mechanism type using a first value of the noise parameter; and determine a DP query result based on applying the noise distribution to the query request applied on a data set.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: A method for manufacturing a luggage includes the steps: A) making a thermoplastic sheet into a shell, B) placing the shell body of the shell in an inner concave mold area of a heating mold and setting the shell edge of the shell to a frame mold area of the heating mold to correspond the outer surface of the shell to an inner wall surface of the heating mold, C) setting the outer surface of the thermoset carbon fiber plastic layer on the inner surface of the shell, D) setting the filling layer on the inner surface of the thermoset carbon fiber plastic layer within the frame mold area, E) expanding an air bag to the thermoset carbon fiber plastic layer and the filling layer and heating a heating mold, so that the shell, the thermoset carbon fiber plastic layer and the filling layer are combined with each other.

Abstract: a luggage with composite material integrally formed frame includes a first shell, a second shell, a first frame, and a second frame. The second shell is openably assembled to the first shell. The first frame is integrated with the first shell and is located on the outer edge of the first shell. The second frame is integrally formed with the second shell and located on an outer edge of the second shell. When the first shell and the second shell are closed, the protruding engagement member of the second frame is engaged in the recessed engagement groove of the first frame.

Abstract: A display device is provided. The display device includes a display panel. The display panel includes a substrate, a light-shielding layer, and a plurality of optical sensors. The light-shielding layer has a plurality of first aperture regions, a plurality of second aperture regions, and a plurality of third aperture regions. The second aperture regions are located between the first aperture regions and the third aperture regions. At least a portion of at least one of the optical sensors overlaps with at least one of the first aperture regions in a normal direction of the substrate. An area of at least one of the second aperture regions is greater than an area of at least one of the first aperture regions, and the area of the at least one of the second aperture regions is smaller than an area of at least one of the third aperture regions.

Abstract: A method for manufacturing a luggage formed by composite material includes the steps: A) using a vacuum molding method to make a thermoplastic sheet into a shell; B) placing the shell in an inner cavity mold area of a heating mold to correspond the outer surface of the shell to the inner wall surface of the inner cavity mold area; C) setting the outer surface of the thermosetting carbon fiber plastic layer on the inner surface of the shell ; D) setting the reinforcing layer on the inner surface of the thermosetting carbon fiber plastic layer at the location corresponding to the corner of the shell; and E) placing an airbag in the receiving area of the shell and inflating the airbag to support the inner surface of the thermosetting carbon fiber plastic layer and the reinforcing layer.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: Disclosed by the present invention are a nitrogen-containing heterocyclic compound, and a composition thereof, a preparation method therefor and an application thereof. The structure of the nitrogen-containing heterocyclic compound according to the present invention is shown in Formula I. The nitrogen-containing heterocyclic compound according to the present invention or a pharmaceutically acceptable salt thereof has better inhibitory activity on p38 protein kinase and/or higher bioavailability. In addition, the preparation method is simple.