Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.

Abstract: A display device is provided. The display device includes a display panel. The display panel includes a substrate, a light-shielding layer, and a plurality of optical sensors. The light-shielding layer has a plurality of first aperture regions, a plurality of second aperture regions, and a plurality of third aperture regions. The second aperture regions are located between the first aperture regions and the third aperture regions. At least a portion of at least one of the optical sensors overlaps with at least one of the first aperture regions in a normal direction of the substrate. An area of at least one of the second aperture regions is greater than an area of at least one of the first aperture regions, and the area of the at least one of the second aperture regions is smaller than an area of at least one of the third aperture regions.

Abstract: A process of producing an extinguishing agent includes dissolving 5 g to 90 g of diammonium hydrogen phosphate, 0.1 g to 60 g of urea, 1 g to 90 g of ammonium carbonate, 5 g to 90 of ammonium sulfate, and 20 g to 250 g of potassium carbonate in 400 ml to 550 ml of water at a temperature of 30° C. to 90° C. to form a first solution; mixing the first solution with 5 g to 500 g of surfactant to undergo a first reaction for forming a second solution; and mixing the second solution with 1000 ml of water to undergo a second reaction for forming an extinguishing agent.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A light-emitting diode (LED) includes a transmissible substrate, an epitaxial layered structure, a distributed Bragg reflector (DBR) structure, a first electrode, and a second electrode. The epitaxial layered structure is disposed on the transmissible substrate. The DBR structure is disposed on the epitaxial layered structure opposite to the transmissible substrate. The DBR structure has at least one first through hole and at least one second through hole, and is formed with a plurality of voids. The first electrode and the second electrode are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. An LED packaged module including the LED is also disclosed.

Abstract: An embodiment of the invention discloses an optoelectronic system comprising a plurality of optoelectronic elements, wherein each of the plurality of optoelectronic elements comprises a semiconductor epitaxial layer, a first electrode, a second electrode, a top surface, a bottom surface, and a plurality of lateral surfaces arranged between the top surface and the bottom surface; a layer covering the plurality of lateral surfaces and comprising a side surface; and a reflecting structure having a shape of pyramid, formed between two adjacent optoelectronic elements of the plurality of optoelectronic elements and electrically separated from the plurality of optoelectronic elements, wherein the reflecting structure is configured to reflect light from the two adjacent optoelectronic elements upwards to leave the optoelectronic system.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.

Abstract: A luggage shell fabrication method includes the step of making a thermoplastic sheet into a shell using a vacuum molding method, the step of placing the shell in a female mold area of a heating mold, the step of applying a molten thermosetting plastic layer to the inner surface of the shell; and the step of pressing the thermosetting plastic layer toward the inner surface of the shell and simultaneously heating the molten thermosetting plastic layer and the shell for causing the shell and the thermosetting plastic layer to be combined with each other to form a luggage shell.

Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A process of producing an extinguishing agent includes dissolving 5 g to 90 g of diammonium hydrogen phosphate, 0.1 g to 60 g of urea, 1 g to 90 g of ammonium carbonate, 5 g to 90 of ammonium sulfate, and 20 g to 250 g of potassium carbonate in 400 ml to 550 ml of water at a temperature of 30° C. to 90° C. to form a first solution; mixing the first solution with 5 g to 500 g of surfactant to undergo a first reaction for forming a second solution; and mixing the second solution with 1000 ml of water to undergo a second reaction for forming an extinguishing agent.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure and is electrically connected to the electrode unit. The anti-adsorption layer has an adsorption capacity for at least one of gaseous contaminants and particulate contaminants which is lower than that of the electrode unit. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: An electrically conductive layered structure includes a lower transparent conductive layer having a bottom surface, an upper transparent conductive layer formed on the lower transparent conductive layer opposite to the bottom surface, and at least one hole extending from the top surface to the bottom surface. The at least one hole has a first diameter at a first side adjacent to the top surface and a second diameter at a second side opposite to the first side. The first diameter is smaller than the second diameter. A light-emitting diode device including the electrically conductive layered structure and a method for manufacturing the electrically conductive layered structure are also disclosed.

Abstract: A die bonding process for manufacturing a semiconductor device includes the steps of: a) preparing a semiconductor structure and a substrate, b) mounting an electrode structure on the semiconductor structure to form a semiconductor component, c) forming a protective component at a die bonding region, and d) mounting the semiconductor component on the substrate via a die bonding technique. The protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure.

Abstract: The disclosure discloses an automated production system for efficient walnut shell-breaking, kernel-taking and shell-kernel separation, solving the problem that the existing walnut shell breaking device cannot adapt to walnuts having different sizes and shell breaking rate and shell breaking efficiency cannot be ensured. The system can realize efficient shell-breaking, kernel-taking and shell-kernel separation on different varieties of walnuts, is quick in production speed and high in automation degree, and meanwhile is capable of improving entire kernel rate and kernel obtaining rate, reducing the damage rate of the walnut kernel and ensuring the high shell-breaking efficiency and thoroughness of shell and kernel separation.

Abstract: A light emitting device includes a substrate, a light emitting unit disposed on the substrate, a metallic electrode unit, a metallic adhesion layer disposed on the first and second electrodes of the electrode unit, and a protective layer disposed on the adhesion layer. The first electrode is disposed on a portion of a first-type semiconductor layer of the light emitting unit. The second electrode is disposed on a second-type semiconductor layer of the light emitting unit disposed on a separated portion of the first-type semiconductor layer. The first and second electrodes are partially exposed by the protective layer and the adhesion layer that is partially exposed by the protective layer. A production method for the light emitting device is also disclosed.

Abstract: A luggage shell fabrication method includes the step of making a thermoplastic sheet into a shell using a vacuum molding method, the step of placing the shell in a female mold area of a heating mold, the step of applying a molten thermosetting plastic layer to the inner surface of the shell; and the step of pressing the thermosetting plastic layer toward the inner surface of the shell and simultaneously heating the molten thermosetting plastic layer and the shell for causing the shell and the thermosetting plastic layer to be combined with each other to form a luggage shell.