Abstract: An embodiment of the disclosure provides an electronic assembly including a stacked structure, a first integrated circuit, a first passive component, and a first electrode. The stacked structure comprises a plurality of insulating layers and a plurality of conductive layers. The first passive component is disposed between the stacked structure and the first integrated circuit. The first electrode is disposed between the stacked structure and the first passive component. The first passive component is electrically connected to the stacked structure through the first electrode.

Abstract: A terminal, comprising one or a plurality of processors, wherein the one or plurality of processors execute a machine-readable instruction to perform: receiving an object in a live streaming; displaying the object on the terminal; detecting a keyword in the object corresponding to a function in the live streaming; and triggering the function in response to an operation on the object. The present disclosure may allow the streamers to generate or amend an object such as stickers on the live streaming room in a more flexible manner. At the same time, the viewer may perform an operation on the object to realize a corresponding function in a more convenient manner. Therefore, the interaction among streamers and viewers may be increased, and the user experience may also be enhanced.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: A slim heat-dissipation module is provided. The slim heat-dissipation module includes a first plate, a second plate, a first porous structure, a second porous structure, a first fluid, and a second fluid. The second plate is combined with the first plate to form a first type chamber and a second type chamber, wherein the first type chamber and the second type chamber are sealed and independent, respectively. The first porous structure is disposed in the first type chamber. The second porous structure is disposed in the second type chamber. The first fluid is disposed in the first type chamber. The second fluid is disposed in the second type chamber.

Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.

Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: An auxiliary operation device for a droplet dispenser includes a droplet sensor, an imaging device and a processor. The droplet sensor has a detected area located between a droplet dispenser and a target area, wherein the droplet sensor detects a droplet output from the droplet dispenser, and outputs a corresponding droplet detection signal. The imaging device captures an image of the target area. The processor obtains a dripping time point at which the droplet passes through the detected area according to the droplet detection signal, and determines whether the target area is shielded within a first time range according to the image, so as to evaluate whether the droplet has successfully dropped into the target area. The above-mentioned auxiliary operating device of the droplet dispenser can objectively determine whether the droplets successfully drops into the target area, and improve the accuracy of judgment.

Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.

Abstract: A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.

Abstract: In a method of forming a pattern, a first pattern is formed over an underlying layer, the first pattern including main patterns and a lateral protrusion having a thickness of less than 25% of a thickness of the main patterns, a hard mask layer is formed over the first pattern, a planarization operation is performed to expose the first pattern without exposing the lateral protrusion, a hard mask pattern is formed by removing the first pattern while the lateral protrusion being covered by the hard mask layer, and the underlying layer is patterned using the hard mask pattern as an etching mask.

Abstract: A target tracking method is provided for a computer device. The method includes determining a target candidate region of a current image frame; capturing a target candidate image matching the target candidate region from the current image frame; determining a target region of the current image frame according to an image feature of the target candidate image; determining motion prediction data of a next image frame relative to the current image frame by using a motion prediction model and according to the image feature of the target candidate image; and determining a target candidate region of the next image frame according to the target region and the motion prediction data.

Abstract: A method of performing automatic tuning on a deep learning model includes: utilizing an instruction-based learned cost model to estimate a first type of operational performance metrics based on a tuned configuration of layer fusion and tensor tiling; utilizing statistical data gathered during a compilation process of the deep learning model to determine a second type of operational performance metrics based on the tuned configuration of layer fusion and tensor tiling; performing an auto-tuning process to obtain a plurality of optimal configurations based on the first type of operational performance metrics and the second type of operational performance metrics; and configure the deep learning model according to one of the plurality of optimal configurations.

Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.

Abstract: Methods and device for paging configuration and power saving in wireless terminal devices are disclosed. The disclosed method may be performed by a wireless terminal device. The method may include receiving paging subgroup configuration information from a wireless network; determining a paging subgroup identifier based on the paging subgroup configuration information and a paging subgroup mode of the wireless terminal device; and determining whether to wake up to monitor a paging occasion based on whether the paging subgroup identifier is indicated prior to an arrival of the paging occasion.

Abstract: A p-aminobenzoic acid-producing microorganism is provided. The p-aminobenzoic acid-producing microorganism is obtained by a method for preparing a p-aminobenzoic acid-producing microorganism. The method for preparing a p-aminobenzoic acid-producing microorganism includes (a) performing an acclimation process on a source microorganism with at least one sulfonamide antibiotic to obtain at least one acclimatized microorganism and (b) screening out at least one p-aminobenzoic acid-producing microorganism from the at least one acclimatized microorganism, wherein the at least one p-aminobenzoic acid-producing microorganism has a higher p-aminobenzoic acid titer than the source microorganism.

Abstract: The present specification discloses video matching. In a computer-implemented method, a plurality of feature vectors of a target video is obtained. A candidate video similar to the target video is retrieved from a video database based on the plurality of feature vectors of the target video. A time domain similarity matrix feature map is constructed between the target video and the candidate video based on the target video and the candidate video. Using the time domain similarity matrix feature map as an input into a deep learning detection model, a video segment matching the target video in the candidate video and a corresponding similarity is output.

Abstract: An anti-twist structure of voice coil motor includes a base, a lens housing, an elastic sheet, a magnet, and a yoke member. The lens housing has a margin wall, and the margin wall has a first protrusion and a contact portion. The elastic sheet has a hollowed slot, and the first protrusion pass through the hollowed slot, so that the elastic sheet is disposed on a portion of the margin wall and on the contact portion. The yoke member has an upper wall and a side wall. The side wall is disposed at one side of the upper wall and the side wall extends outward in a direction not parallel to the upper wall. The yoke member surrounds the lens housing, the elastic sheet, and the magnet. The lens housing has a deflectable angle relative to a horizontal reference line.

Abstract: A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.