Abstract: Packaged semiconductor devices including high-thermal conductivity molding compounds and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution structure; a first die over and electrically coupled to the first redistribution structure; a first through via over and electrically coupled to the first redistribution structure; an insulation layer extending along the first redistribution structure, the first die, and the first through via; and an encapsulant over the insulation layer, the encapsulant surrounding portions of the first through via and the first die, the encapsulant including conductive fillers at a concentration ranging from 70% to about 95% by volume.

Abstract: A method of wavelength tuning in a silicon photonics circuit includes receiving a bus waveguide, a ring resonator optically coupled to the bus waveguide, and a dielectric layer over the bus waveguide and over the ring resonator. The method further includes performing a first heat process at a first temperature to heat up the dielectric layer, where the first heat process shifts an initial resonance wavelength of the ring resonator to a first resonance wavelength shorter than the initial resonance wavelength. The first heat process permanently shifts the initial resonance wavelength to the first resonance wavelength, the first resonance wavelength being a wavelength when no heat is being applied to the ring resonator.

Abstract: A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having an inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

Abstract: A method of engineering forecast and analysis is provided. The method includes: generating a forecasting model based on financial or business information obtained through a user interface, where the forecasting model expresses a logical determining and/or calculation rule based on a structure of a high-order directed graph and by using a plurality of nodes, attributes of the plurality of nodes, and a relationship between every two of the plurality of nodes, and the forecasting model expresses a forecasting path through a directed edge between the nodes; and configuring a common attribute of the forecasting model, an attribute of the forecasting path, and a personalized attribute of the node based on instantiation configuration information.

Abstract: A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.

Abstract: An electrostatic sensing system configured to sense an electrostatic information of a fluid inside a fluid distribution component and including an electrostatic sensing assembly, a signal amplifier and an analog-to-digital converter. The electrostatic sensing assembly includes a sensing component, and a shield. The sensing component is configured to be disposed at the fluid distribution component. The sensing component is disposed through the fluid distribution component so as to be partially located in the fluid distribution component. The shield surrounds a part of the sensing component that is located in the fluid distribution component. At least part of the shield is located on an upstream side of the sensing component. The signal amplifier is electrically connected to the sensing component. The analog-to-digital converter is electrically connected to the signal amplifier. The shield has an opening spaced apart from the sensing component.

Abstract: The present disclosure relates to air assemblies having an inflation, a deflation, and a closed state for use with inflatable products, such as air mattresses. Specifically, the present disclosure relates to air assemblies where the configuration of the air assembly can be changed manually by a user by operating a directional control valve to inflate, deflate, or close the inflatable product. The directional control valve may also activate a pump in the inflation and deflation states and deactivate the pump in the closed state.

Abstract: A data storage device, and an error tolerance selecting method thereof which includes: writing data to data blocks of the data storage device; reading written data of the data blocks as read data; comparing the read data and the written data of each data column in the data blocks, and calculating a number of error bits in each chunk including a plurality of data columns accordingly; calculating a difference value between the number of error bits in the chunk and a first threshold value to store the difference value in an error tolerance list; and selecting a largest difference value in the error tolerance list as an error tolerance.

Abstract: A device establishes a first encrypted tunnel with a first active security gateway at a first data center to enable the device to communicate, via the first encrypted tunnel, with a first access and mobility management function (AMF) at the first data center. The device forwards, via the first encrypted tunnel and the first active security gateway, a first User Equipment device (UE) message to the first AMF. The device determines an occurrence of a failure or overload condition at the first active security gateway, and establishes, based on the determined occurrence of the failure or overload condition, a second encrypted tunnel with a standby security gateway at a second data center to enable the device to communicate, via the second encrypted tunnel, with the first AMF. The device forwards, via the second encrypted tunnel and the standby security gateway, at least one second UE message to the first AMF.

Abstract: A semiconductor device assembly including a through-silicon via (TSV) having an end region protruding from a back side of the substrate, the end region being surrounded by a conductive annulus disposed over the back side of the substrate; a dielectric layer disposed over the back side of the substrate, the dielectric layer having an upper surface flush with an upper surface of the end region of the TSV and flush with an upper surface of the conductive annulus; and a bond pad disposed over and electrically coupled to the end region of the TSV and the conductive annulus.

Abstract: The invention discloses a substrate container including a shell and a cover member. The shell defines an accommodation space, and has a bottom and at least one exhaust hole formed on the bottom, wherein the exhaust hole is adjacent to an opening of the shell. The cover member is mounted to the bottom of the shell, and the cover member and the bottom of the shell define a negative pressure cavity above and communicating with the at least one exhaust hole. An elongated exhaust hole is defined above the negative pressure cavity, and communicates with the negative pressure cavity and the accommodation space. A gas in the accommodation space is exhausted sequentially from the elongated exhaust hole, the negative pressure cavity and the at least one exhaust hole.

Abstract: An embodiment of the disclosure provides a package device including a redistribution layer, an integrated passive device layer, a first port, and a second port. The integrated passive device layer contacts the redistribution layer. The integrated passive device layer has at least one capacitor. The at least one capacitor includes a first capacitor and a second capacitor. The first port is electrically connected to the first capacitor and the second capacitor. The second port is provided opposite to the first port. The second port is electrically connected to the first capacitor and the second capacitor. The first port and the second port have the same resistance.

Abstract: A high-speed connector includes an insulating housing, and a first terminal assembly mounted in the insulating housing. The first terminal assembly includes a plurality of first terminals, a first base body and a first conductive film. The plurality of the first terminals include at least two first grounding terminals and at least two first signal terminals. At least one portion of a bottom of the first base body extends downward to form at least one first protruding portion. The at least two first signal terminals penetrate through the at least one first protruding portion. The first conductive film is covered to the at least one first protruding portion. The first conductive film has a first metal layer. The first metal layer is electrically connected with the at least two first grounding terminals to form a grounding structure.

Abstract: A device may include a processor configured to detect that an Internet Protocol Security (IPsec) tunnel from a user equipment (UE) device connected via a WiFi connection has become idle, based on the IPsec tunnel meeting an idleness criterion, and instruct the UE device to tear down the IPsec tunnel, in response to detecting that the IPsec tunnel from the UE device connected via the WiFi connection meets the idleness criterion. The device may be further configured to receive a mobile terminating call for the UE device; establish a new IPsec tunnel to the UE device via the WiFi connection, in response to receiving the mobile terminating call for the UE device; and forward the received mobile terminating call to the UE device via the established new IPsec tunnel.

Abstract: Disclosed are a semiconductor structure and a manufacturing method of a semiconductor structure. In one embodiment, the semiconductor structure includes a first semiconductor element, a second semiconductor element, a heat dissipation element and a gap-filling material. The second semiconductor element is on the first semiconductor element. The heat dissipation element is on the first semiconductor element and spaced apart from the second semiconductor element by a gap. The gap-filling material is filled in the gap between the second semiconductor element and the heat dissipation element.

Abstract: A selecting bad data column method suitable for a data storage device is provided. The data storage device includes a control unit and a data storage medium. The selecting method performed by the control unit includes: reading written data of each data column as read data; comparing the read data and the written data of each data column to calculate an average number of error bits of each data column; determining whether the average number of error bits of each data column is greater than or equal to a predetermined value; and recording a data column as a bad data column when the average number of error bits of the data column is greater than or equal to the predetermined value. In this way, in order to avoid the problems that the error correction code can't be corrected or the correction capability is excessively consumed.

Abstract: An electrical connector locking and stabilizing structure includes a socket connector including a seat body with a docking space, conductive terminals pierced on two sides of the docking space and a metal shell assembled on the seat body with a button hole formed in each of two limit frames thereof, and a plug connector including a base having a bottom insertion portion combined with the docking space and mounted with contact terminals that are electrically connected to a transmission unit located on the top surface of the base, a shielding shell assembled with the base and having two pushing portions respectively provided with a shaft groove and a supporting portion, and a handle having two shaft portions respectively extending into the shaft grooves and the button holes with the top side limited by the limit frames and two side rods with the bottom side stopped against the supporting portions.

Abstract: A beam splitting and combining device includes a first prism, a second prism and a first optical film. The first prism includes a first surface, a second surface and a third surface. The second prism includes a fourth surface, a fifth surface and a sixth surface. The fifth surface and the second surface are attached to each other. The first optical film is formed between the second surface and the fifth surface by coating. A beam in a first range of wavelengths is configured to pass through the first surface, the second surface, the first optical film, the fifth surface and the sixth surface in order or in reverse order, or is configured to pass through the first surface and the third surface in order or in reverse order.

Abstract: Disclosed are a semiconductor stack structure and a manufacturing method of a semiconductor stack structure. In one embodiment, the semiconductor stack structure includes a first semiconductor element, a second semiconductor element side-by-side bonded to the first semiconductor element through a direct bonding manner and a third semiconductor element, wherein the first semiconductor element and the second semiconductor element are bonded on the third semiconductor element.