Patents by Inventor Yuan Lu

Yuan Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunable nitric oxide-releasing macromolecules having multiple nitric oxide donor structures
    Patent number: 11124476
    Abstract: Provided here are nitric oxide-releasing compounds that include at least two different NO donor functional groups of the same class. In some embodiments, such nitric oxide-releasing compounds are macromolecules such as dendrimer and co-condensed silica. Pharmaceutical compositions, wound dressings, kits and methods of treatments are also provided herein.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: September 21, 2021
    Assignees: Novan, Inc., The University of North Carolina at Chapel Hill
    Inventors: Mark Schoenfisch, Yuan Lu, Nathan Stasko, Jian Bao
  • MALONATES AND DERIVATIVES FOR IN-SITU FILMS
    Publication number: 20210277200
    Abstract: The present teachings contemplate a method comprising coating an polymeric material with a composition including a dicarbonyl compound and having a viscosity of from about 50 cps to about 500 cps, wherein the coating initiates either: (i) spontaneous polymerization (e.g., in less than about one minute) at room temperature of the composition without the addition of an initiator; or (ii) polymerization at room temperature at a selected later time with or without the addition of an initiator; and wherein the composition adheres or facilitates adhesion of the polymeric material to a substrate.
    Type: Application
    Filed: May 24, 2021
    Publication date: September 9, 2021
    Inventors: Yuan Lu, Kenneth Mazich, Kevin Hicks, Austin O'connor, Michael Czaplicki
  • METHOD FOR FORMING SEMICONDUCTOR DEVICE
    Publication number: 20210280579
    Abstract: A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 9, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Te LIN, Wei-Yuan LU, Feng-Cheng YANG
  • EPITAXIAL FEATURES OF SEMICONDUCTOR DEVICES AND RELATED METHODS
    Publication number: 20210257482
    Abstract: A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.
    Type: Application
    Filed: November 12, 2020
    Publication date: August 19, 2021
    Inventors: Feng-Ching CHU, Chung-Chi WEN, Wei-Yuan LU, Feng-Cheng YANG, Yen-Ming CHEN
  • Packages with Enlarged Through-Vias in Encapsulant
    Publication number: 20210225722
    Abstract: A package includes a device die, an encapsulant encapsulating the device die therein, a first plurality of through-vias penetrating through the encapsulant, a second plurality of through-vias penetrating through the encapsulant, and redistribution lines over and electrically coupling to the first plurality of through-vias. The first plurality of through-vias include an array. The second plurality of through-vias are outside of the first array, and the second plurality of through-vias are larger than the first plurality of through-vias.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 22, 2021
    Inventors: Hung-Jui Kuo, Tai-Min Chang, Hui-Jung Tsai, De-Yuan Lu, Ming-Tan Lee
  • METHOD FOR ELECTROLYSIS OF WATER AND METHOD FOR PREPARING CATALYSTS FOR ELECTROLYSIS OF WATER
    Publication number: 20210214852
    Abstract: A method for electrolysis of water and a method for preparing a catalyst for electrolysis of water are provided. The method for electrolysis of water includes using a high entropy alloy as a catalyst. Further, the method for preparing a catalyst for electrolysis of water includes the steps of placing a substrate in an aqueous electrolyte containing a high entropy alloy precursor and performing an electroplating process on the substrate to form a high entropy alloy catalyst on the substrate.
    Type: Application
    Filed: March 15, 2020
    Publication date: July 15, 2021
    Applicants: National Tsing Hua University, Chang Chun Plastics Co., Ltd., Chang Chun Petrochemical Co., Ltd., DAIREN CHEMICAL CORP.
    Inventors: Chun-Lung Huang, Shih-Yuan Lu
  • METHODS AND COMPOSITIONS FOR TREATING EXCESSIVE SLEEPINESS
    Publication number: 20210205257
    Abstract: The present invention relates to carbamoyl phenylalaninol compounds and methods of using the same to treat disorders. The invention further relates to the development of methods for treating excessive sleepiness in a subject, e.g., due to narcolepsy or obstructive sleep apnea, with the surprising outcome that “normal” levels of wakefulness are achieved based on standard objective and subjective sleepiness tests.
    Type: Application
    Filed: March 25, 2021
    Publication date: July 8, 2021
    Inventors: Lawrence Patrick Carter, Yuan Lu, Katayoun Zomorodi
  • Merged Source/Drain Features
    Publication number: 20210202733
    Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.
    Type: Application
    Filed: March 15, 2021
    Publication date: July 1, 2021
    Inventors: Chun-An Lin, Wei-Yuan Lu, Feng-Cheng Yang, Tzu-Ching Lin, Li-Li Su
  • ACQUIRING ENTITY WEBPAGE LINK BASED ON TOPOLOGICAL RELATIONSHIP GRAPH
    Publication number: 20210191951
    Abstract: The present disclosure discloses a chatbot with a stance taking. Opinions may be extracted from candidate replies during a processing of conversation, and the extracted opinions may be compared with the stance taken by the chatbot so as to perform selection on the candidate replies and remove the candidate replies which have conflicts with the stance taken by the chatbot. With such technical solutions, the stance taken by the chatbot may be exhibited.
    Type: Application
    Filed: May 13, 2019
    Publication date: June 24, 2021
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Bai SU, Chao MA, Changhai ZHOU, Shujun HUA, Yuan LU, Ning WEN
  • GENOME-MODIFIED RECOMBINANT ADENO-ASSOCIATED VIRUS VECTORS
    Publication number: 20210189428
    Abstract: Provided herein are recombinant adeno-associated virus (rAAV) nucleic acid vectors that comprise one or more modifications within at least one inverted terminal repeat (ITR) region. Exemplary modifications include ITR sequences comprising a glucocorticoid responsive element and/or a transcription factor binding site. Also provided are plasmids, libraries, rAAV particles, compositions, kits, and methods related to such vectors.
    Type: Application
    Filed: January 13, 2021
    Publication date: June 24, 2021
    Applicant: University of Florida Research Foundation, Incorporated
    Inventors: Yuan Lu, Chen Ling, Arun Srivastava
  • Semiconductor device and method for manufacturing the same
    Patent number: 11018134
    Abstract: A semiconductor device is provided. The semiconductor device includes a first transistor, a first interconnect structure, and a second transistor. The first transistor has a first gate length. The first interconnect structure is over the first transistor. The second transistor is over the first interconnect structure. The second transistor is electrically coupled to the first transistor through the first interconnect structure. The second transistor has a second gate length, and the first gate length is shorter than the second gate length.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Te Lin, Wei-Yuan Lu, Feng-Cheng Yang
  • Malonates and derivatives for in-situ films
    Patent number: 11015034
    Abstract: The present teachings contemplate a method comprising coating an polymeric material with a composition including a dicarbonyl compound and having a viscosity of from about 50 cps to about 500 cps, wherein the coating initiates either: (i) spontaneous polymerization (e.g., in less than about one minute) at room temperature of the composition without the addition of an initiator; or (ii) polymerization at room temperature at a selected later time with or without the addition of an initiator; and wherein the composition adheres or facilitates adhesion of the polymeric material to a substrate.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: May 25, 2021
    Assignee: Zephyros, Inc.
    Inventors: Yuan Lu, Kenneth Mazich, Kevin Hicks, Austin O'Connor, Michael Czaplicki
  • Semiconductor device with epitaxial source/drain
    Patent number: 11018224
    Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. In some embodiments, the semiconductor device includes a fin extending from a substrate and a gate structure disposed over the fin. The gate structure includes a gate dielectric formed over the fin, a gate electrode formed over the gate dielectric, and a sidewall spacer formed along a sidewall of the gate electrode. In some cases, a U-shaped recess is within the fin and adjacent to the gate structure. A first source/drain layer is conformally formed on a surface of the U-shaped recess, where the first source/drain layer extends at least partially under the adjacent gate structure. A second source/drain layer is formed over the first source/drain layer. At least one of the first and second source/drain layers includes silicon arsenide (SiAs).
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Ta Yu, Sheng-Chen Wang, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su, Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong
  • Methods of Manufacturing Semiconductor Devices
    Publication number: 20210118697
    Abstract: A semiconductor device and method of making a conductive connector is provided. In an embodiment an opening is formed within a photoresist by adjusting the center point of an in-focus area during the exposure process. Once the photoresist has been developed to form an opening, an after development baking process is utilized to reshape the opening. Once reshaped, a conductive material is formed into the opening to take on the shape of the opening.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Hung-Jui Kuo, Ming-Tan Lee, Chen-Cheng Kuo, De-Yuan Lu
  • Methods and compositions for treating excessive sleepiness
    Patent number: 10959976
    Abstract: The present invention relates to carbamoyl phenylalaninol compounds and methods of using the same to treat disorders. The invention further relates to the development of methods for treating excessive sleepiness in a subject, e.g., due to narcolepsy or obstructive sleep apnea, with the surprising outcome that “normal” levels of wakefulness are achieved based on standard objective and subjective sleepiness tests.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: March 30, 2021
    Assignee: Jazz Pharmaceuticals Ireland Limited
    Inventors: Lawrence Patrick Carter, Yuan Lu, Katayoun Zomorodi
  • Catalyst and Method for Manufacturing the Same and Method for Hydrogenating Aromatic Epoxy Compound
    Publication number: 20210086167
    Abstract: A catalyst includes a carbon black support and active metal particles. A surface of the carbon black support has a relative atomic percentage of oxygen atoms ranged from 2 atom % to 12 atom %. The active metal particles are distributed on the carbon black support. Each of the active metal particles includes rhodium metal and rhodium oxide. A method for manufacturing the catalyst and a method for hydrogenating an aromatic epoxy compound are also provided herein.
    Type: Application
    Filed: October 25, 2019
    Publication date: March 25, 2021
    Inventors: Chung-Sung Tan, Wei-Yuan Lu
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210091078
    Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 25, 2021
    Inventors: Wei-Yuan LU, Sai-Hooi YEONG
  • Merged source/drain features
    Patent number: 10950730
    Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: March 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-An Lin, Wei-Yuan Lu, Feng-Cheng Yang, Tzu-Ching Lin, Li-Li Su
  • Methods and compositions for treating excessive sleepiness
    Patent number: 10912754
    Abstract: The present invention relates to carbamoyl phenylalaninol compounds and methods of using the same to treat disorders. The invention further relates to the development of methods for treating excessive sleepiness in a subject, e.g., due to narcolepsy or obstructive sleep apnea, with the surprising outcome that “normal” levels of wakefulness are achieved based on standard objective and subjective sleepiness tests.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: February 9, 2021
    Assignee: Jazz Pharmaceuticals Ireland Limited
    Inventors: Lawrence Patrick Carter, Yuan Lu, Katayoun Zomorodi
  • Genome-modified recombinant adeno-associated virus vectors
    Patent number: 10900053
    Abstract: Provided herein are recombinant adeno-associated virus (rAAV) nucleic acid vectors that comprise one or more modifications within at least one inverted terminal repeat (ITR) region. Exemplary modifications include ITR sequences comprising a glucocorticoid responsive element and/or a transcription factor binding site. Also provided are plasmids, libraries, rAAV particles, compositions, kits, and methods related to such vectors.
    Type: Grant
    Filed: November 21, 2015
    Date of Patent: January 26, 2021
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Yuan Lu, Chen Ling, Arun Srivastava