Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: The present invention discloses a dyeable 1.74 resin lens and a preparation method thereof. The resin lens includes a module layer with a refractive index being 1.74, a dyeable layer with a refractive index being 1.60 is poured on an upper surface of the module layer, an upward curved degree of the dyeable layer is the same as an upward curved degree of the module layer, and a center thickness of the dyeable layer is 0.5-1.2 mm. According to the dyeable 1.74 resin lens of the present invention, a layer of dyeable 1.60plus resin lens is attached to a surface of a 1.74 lens, dyeing performance is good, a visible light transmittance can reach 10-30%, and the blank that the 1.74 lens cannot be dyed is filled.

Abstract: A voltage regulator including an amplifier, a start signal generator and a power transistor is provided. The amplifier has a first positive input terminal, a second positive input terminal, and a negative input terminal to receive a start signal, a reference voltage and a feedback voltage respectively. An output terminal of the amplifier generates a driving voltage. The start signal generator is coupled to the first positive input terminal of the amplifier and generates the start signal, which is incremental, during a startup time interval in a voltage bypass mode. The power transistor generates an output voltage according to the driving voltage based on an operating power. In the voltage bypass mode, the reference voltage is equal to the operating power. A soft-start effect can be effectively achieved by the voltage regulator in the voltage bypass mode.

Abstract: A multi-piece pre-assembled raft foundation is provided and includes pre-assemble bottom layer rebars of foundation slab, foundation steel columns, upper layer rebars of the foundation slab, and foundation rebars. The pre-assembled raft foundation is transported to a construction site for final assembly. A construction method of the multi-piece pre-assembled raft foundation is also provided.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

Abstract: The present invention relates to a novel compound, which has cancer therapeutic activity. The present invention also relates to a preparation method for the compound and a pharmaceutical composition containing the compound.

Abstract: Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.

Abstract: The present invention relates to a novel compound (formula I), which has cancer treatment activity. The present invention also relates to a preparation method for the compound and a pharmaceutical composition containing the compound.

Abstract: A soft actuator, its working method and robot are provided. The soft actuator includes a power input shaft, and multiple electromagnetic clutches are coaxially installed in series on the power input shaft. A bending elastic part is arranged between the thrust plate of each electromagnetic clutch and the gear frame of the electromagnetic clutch. The bending elastic part is installed on the sleeve of the gear frame and in contact with the baffle of the gear frame. The bending elastic part is connected with the clutch output gear of the electromagnetic clutch through the gear frame. The gear frame is fixedly connected with the clutch output gear and rotates coaxially.

Abstract: The present invention relates to carbamoyl phenylalaninol compounds and methods of using the same to treat disorders. The invention further relates to the development of methods for treating excessive sleepiness in a subject, e.g., due to narcolepsy or obstructive sleep apnea, with the surprising outcome that “normal” levels of wakefulness are achieved based on standard objective and subjective sleepiness tests.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

Abstract: Provided are compounds of formula (I), which have KRAS mutation tumor regulating activity. Also provided are a method for providing these compounds and a pharmaceutical composition comprising the same.

Abstract: Methods and systems for determining a plurality of sequences of nucleic acid (e.g., DNA) molecules in a sequencing-by-synthesis process are provided. In one embodiment, the method comprises obtaining images of fluorescent signals obtained in a plurality of synthesis cycles. The images of fluorescent signals are associated with a plurality of different fluorescence channels. The method further comprises preprocessing the images of fluorescent signals to obtain processed images. Based on a set of the processed images, the method further comprises detecting center positions of clusters of the fluorescent signals using a trained convolutional neural network (CNN) and extracting, based on the center positions of the clusters of fluorescent signals, features from the set of the processed images to generate feature embedding vectors. The method further comprises determining, in parallel, the plurality of sequences of DNA molecules using the extracted features based on a trained attention-based neural network.

Abstract: A method for electrolysis of water and a method for preparing a catalyst for electrolysis of water are provided. The method for electrolysis of water includes using a high entropy alloy as a catalyst. Further, the method for preparing a catalyst for electrolysis of water includes the steps of placing a substrate in an aqueous electrolyte containing a high entropy alloy precursor and performing an electroplating process on the substrate to form a high entropy alloy catalyst on the substrate.

Abstract: A variant AAV capsid protein, comprising an amino acid sequence corresponding to the position amino acids 585 to 597 or 598 of AAV8 or the position amino acids 583 to 595 or 596 of AAV9, and the polynucleotide, host cells, vectors, AAV virion or the pharmaceutical composition thereof. A method of treating disease, the method comprising administering to a subject in need thereof an effective amount of the recombinant AAV virion.

Abstract: A package includes a device die, an encapsulant encapsulating the device die therein, a first plurality of through-vias penetrating through the encapsulant, a second plurality of through-vias penetrating through the encapsulant, and redistribution lines over and electrically coupling to the first plurality of through-vias. The first plurality of through-vias include an array. The second plurality of through-vias are outside of the first array, and the second plurality of through-vias are larger than the first plurality of through-vias.

Abstract: In an embodiment, a device includes: a nanostructure; and a source/drain region adjoining a channel region of the nanostructure, the source/drain region including: a first epitaxial layer on a sidewall of the nanostructure, the first epitaxial layer including a germanium-free semiconductor material and a p-type dopant; a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including a germanium-containing semiconductor material and the p-type dopant; and a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including the germanium-containing semiconductor material and the p-type dopant.

Abstract: A method according to the present disclosure includes depositing, over a substrate, a stack including channel layers interleaved by sacrificial layers, forming a first fin structure and a second fin in a first area and a second area of the substrate, depositing a first dummy gate stack over the first fin structure and a second dummy gate stack over the second fin structure, recessing source/drain regions of the first fin structure and second fin structure to form first source/drain trenches and second source/drain trenches, selectively and partially etching the sacrificial layers to form first inner spacer recesses and second inner spacer recesses, forming first inner spacer features in the first inner spacer recesses, and forming second inner spacer features in the second inner spacer recesses. A composition of the first inner spacer features is different from a composition of the second inner spacer features.

Abstract: A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

Abstract: A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures is provided. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.