Abstract: A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

Abstract: A package includes a device die, an encapsulant encapsulating the device die therein, a first plurality of through-vias penetrating through the encapsulant, a second plurality of through-vias penetrating through the encapsulant, and redistribution lines over and electrically coupling to the first plurality of through-vias. The first plurality of through-vias include an array. The second plurality of through-vias are outside of the first array, and the second plurality of through-vias are larger than the first plurality of through-vias.

Abstract: The present invention discloses a dyeable 1.74 resin lens and a preparation method thereof. The resin lens includes a module layer with a refractive index being 1.74, a dyeable layer with a refractive index being 1.60 is poured on an upper surface of the module layer, an upward curved degree of the dyeable layer is the same as an upward curved degree of the module layer, and a center thickness of the dyeable layer is 0.5-1.2 mm. According to the dyeable 1.74 resin lens of the present invention, a layer of dyeable 1.60plus resin lens is attached to a surface of a 1.74 lens, dyeing performance is good, a visible light transmittance can reach 10-30%, and the blank that the 1.74 lens cannot be dyed is filled.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: The present teachings contemplate a method comprising providing a first and second substrate, locating an initiator onto a surface of the first or second substrate, the initiator including a substance for initiating polymerization of a polymerizable adhesive, locating the polymerizable adhesive onto a surface of the first and second substrate, the adhesive including a monofunctional, difunctional, or multifunctional methylene malonate, or cyanoacrylate, and contacting first and second substrate.

Abstract: An AAV library, comprising AAV variants having an amino acid sequence corresponding to the position amino acids 585 to 597 or 598 of AAV8 or the position amino acids 583 to 595 or 596 of AAV9, and the polynucleotide, host cells, thereof. A method of generating and screening an AAV library and its use.

Abstract: The present disclosure discloses a chatbot with a stance taking. Opinions may be extracted from candidate replies during a processing of conversation, and the extracted opinions may be compared with the stance taken by the chatbot so as to perform selection on the candidate replies and remove the candidate replies which have conflicts with the stance taken by the chatbot. With such technical solutions, the stance taken by the chatbot may be exhibited.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.

Abstract: Described is a method of processing an antimicrobial glass substrate. More particularly, described is a method of removing one or more of silver nitrate or silver oxide on the surface of an antimicrobial glass substrate. Also described is a method of manufacturing a glass substrate that is substantially free of yellow discoloration.

Abstract: A method for electrolysis of water and a method for preparing a catalyst for electrolysis of water are provided. The method for electrolysis of water includes using a high entropy alloy as a catalyst. Further, the method for preparing a catalyst for electrolysis of water includes the steps of placing a substrate in an aqueous electrolyte containing a high entropy alloy precursor and performing an electroplating process on the substrate to form a high entropy alloy catalyst on the substrate.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: A screen protector comprises a glass-based substrate and an adhesive. The glass-based substrate comprises a first major surface, a second major surface, a thickness, and an edge. The first major surface comprises a first planar portion and a peripheral portion extending outwardly from the first planar portion. The second major surface comprises a second planar portion opposite the first planar portion and is parallel to the first planar portion. The edge comprises an outer peripheral surface that intersects the peripheral portion of the first major surface. The adhesive comprises a first major surface, a second major surface, a thickness, and an edge. The first major surface of the adhesive is adhered to the second major surface of the glass-based substrate.

Abstract: A voltage regulator including an amplifier, a start signal generator and a power transistor is provided. The amplifier has a first positive input terminal, a second positive input terminal, and a negative input terminal to receive a start signal, a reference voltage and a feedback voltage respectively. An output terminal of the amplifier generates a driving voltage. The start signal generator is coupled to the first positive input terminal of the amplifier and generates the start signal, which is incremental, during a startup time interval in a voltage bypass mode. The power transistor generates an output voltage according to the driving voltage based on an operating power. In the voltage bypass mode, the reference voltage is equal to the operating power. A soft-start effect can be effectively achieved by the voltage regulator in the voltage bypass mode.

Abstract: A detection assembly, a robotic vacuum cleaner, a walking floor status detection method and a control method are provided. The detection assembly includes optical transmitters, one optical receiver and an assembly body. The optical transmitters and the optical receiver are all mounted on the assembly body, and optical transmitters, the one receiver and the assembly body are integrated into one piece.

Abstract: A field effect transistor includes a substrate and spacers over the substrate. The field effect transistor includes a channel recess cavity between the spacers, wherein a bottom-most surface of the channel recess cavity is parallel to the substrate top surface. The field effect transistor includes a gate stack, wherein the gate stack includes a bottom portion in the channel recess cavity and a top portion outside the channel recess cavity, the gate stack further includes a gate dielectric layer extending from the channel recess cavity along sidewalls of each of the pair of spacers, and the gate dielectric layer directly contacts the substrate below substrate top surface. The field effect transistor includes a strained source/drain (S/D) below the substrate top surface, wherein the strained S/D extends below the gate stack. The field effect transistor further includes a source/drain (S/D) extension substantially conformably surrounding the strained S/D.

Abstract: A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: A photoresist apparatus and a method are provided. The photoresist apparatus includes a pre-baking apparatus. The pre-baking apparatus includes: a hot-plate, a first cover over the hot-plate, a second cover over the first cover, a first heating element extending along a topmost surface of the first cover, and a second heating element extending along a topmost surface of the second cover.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.