Abstract: Adaptive-on-time techniques to improve the frequency variations inherent in constant-on-time COT converters are presented. A switching converter contains a power switch; a pulse generator adapted to generate a pulsed signal to switch the power switch on with a switching frequency; a ramp generator adapted to generate a ramp signal; and a controller adapted to detect a parameter of the ramp signal, compare the parameter with a reference value, and to generate a control signal based on the comparison to control the switching frequency. This allows controlling a switching frequency of the converter without increasing a noise level of the converter.

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A switching converter comprising a regulation circuit adapted to regulate an output value of the converter based on a ramp signal is provided. A feedback circuit adapted to control at least one of a delay and a slope of the ramp signal based on a parameter of the ramp signal is also provided. A method of regulating an output value of a switching converter is also presented.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A data cable, electronic system and method for transmitting MIPI signals are provided. The electronic system includes a first electronic device configured to generate at least one pair of MIPI (Mobile Industry Processor Interface) differential signals, and a data cable and a second electronic device connected to the first electronic device via the data cable. The data cable is configured to receive the at least one pair of MIPI differential signals from the first electronic device, and perform impedance matching and shielded grounding processing on the at least one pair of MIPI differential signals, and transmit the processed at least one pair of MIPI differential signals to the second electronic device.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor integrated chip. The method may be performed by forming an image sensing element within a substrate, and forming an absorption enhancement structure over a back-side of the substrate. The absorption enhancement structure is selectively etched to concurrently define a plurality of grid structure openings and a ground structure opening within the absorption enhancement structure. A grid structure is formed within the plurality of grid structure openings and a ground structure is formed within the ground structure opening. The grid structure extends from over the absorption enhancement structure to a location within the absorption enhancement structure.

Abstract: A method includes forming an Inter-layer Dielectric (ILD) having a portion at a same level as a metal gate of a transistor. The ILD and the metal gate are parts of a wafer. The ILD is etched to form a contact opening. The wafer is placed into a PVD tool, with a metal target in the PVD tool. The metal target has a first spacing from a magnet over the metal target, and a second spacing from the wafer. A ratio of the first spacing to the second spacing is greater than about 0.02. A metal layer is deposited on the wafer, with the metal layer having a bottom portion in the contact opening, and a sidewall portion in the contact opening. An anneal is performed to react the bottom portion of the metal layer with the source/drain region to form a silicide region.

Abstract: A method of processing an image sensor system, comprising steps of placing a first cover member on top of an image sensor; coating the image sensor and the first cover member with a dark coating agent; removing the first cover member from the image sensor; placing a second cover member on top of the image sensor; affixing the image sensor on to a permanent mount to form an electrical coupling between the image sensor and the permanent mount; removing the second cover member from the image sensor; wherein the first cover member completely covers a top portion of the image sensor; and wherein the second cover member includes an internal rib configured to form a contact seal with the image sensor.

Abstract: A sequential driving method for driving a switch circuit of a power converter is presented. The method has the steps of driving a switch circuit which contains a power switch, defining a driving sequence; and applying sequentially an electrical parameter to the power switch, based on the driving sequence. Defining a driving sequence includes defining a plurality of different driving levels associated with the electrical parameter and defining a plurality of time windows within a switching time period. Each time window is associated with a driving level among the plurality of driving levels.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A protection circuit and a method for a high voltage switching regulator is presented. A power supply comprising a switching converter for providing an output voltage is provided. The switching converter is comprised of a first power switch coupled to a second power switch via a switching node, and a driver coupled to the first and second power switches. There is a protection circuit comprised of a first isolation switch coupled to a second isolation switch and a first driver for driving the first isolation switch, and a second driver for driving the second isolation switch. The circuit and method may comprise turning off both the first isolation switch and the second isolation switch when the first power switch and the second power switch are both turned off. This isolates a low voltage domain from a high voltage domain. This prevents current leakages from occurring during switching dead times.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor integrated chip. The method may be performed by forming an image sensing element within a substrate, and forming an absorption enhancement structure over a back-side of the substrate. The absorption enhancement structure is selectively etched to concurrently define a plurality of grid structure openings and a ground structure opening within the absorption enhancement structure. A grid structure is formed within the plurality of grid structure openings and a ground structure is formed within the ground structure opening. The grid structure extends from over the absorption enhancement structure to a location within the absorption enhancement structure.

Abstract: An FSI image sensor device structure is provided. The FSI image sensor device structure includes a substrate and a barrier structure formed in the substrate. The barrier structure includes a plurality of protrusion portions and a plurality of pillar portions. Each of the protrusion portions has a first height, and each of the pillar portions has a second height that is greater than the first height. The FSI image sensor device structure includes a pixel region formed over the protrusion portions and a storage region formed over the protrusion portions, wherein the pillar portions surround the pixel region.

Abstract: A switching converter, which produces an output voltage, contains a switch operable between a first state for opposing a decrease in the output voltage and a second state for opposing an increase in the output voltage. The converter also contains a circuit adapted to determine a time period during which the output voltage is decreasing, wherein during the time period the switch is in the first state. The circuit also calculates, based on the time period, a time to turn the switch from the first state to the second state to prevent the output voltage increasing above a reference value. Optionally, the time to turn the switch to the second state is based on a duty cycle of the converter.

Abstract: A protection circuit and a method for a high voltage switching regulator is presented. A power supply comprising a switching converter for providing an output voltage is provided. The switching converter is comprised of a first power switch coupled to a second power switch via a switching node, and a driver coupled to the first and second power switches. There is a protection circuit comprised of a first isolation switch coupled to a second isolation switch and a first driver for driving the first isolation switch, and a second driver for driving the second isolation switch. The circuit and method may comprise turning off both the first isolation switch and the second isolation switch when the first power switch and the second power switch are both turned off. This isolates a low voltage domain from a high voltage domain. This prevents current leakages from occurring during switching dead times.

Abstract: Performance in a communications system is improved by determining whether an application executing over a data bearer is using transmission control protocol (TCP). A TCP ACK reduction request is received and at least one redundant TCP ACK is filtered out.

Abstract: A wireless transmit receive unit (WTRU) is configured in dual connectivity with a master cell group and a secondary cell group. Uplink (UL) data is sent in an active one of the master cell group and the secondary cell group as an active UL transmission cell group. It is determined whether a UL transmission is to be switched to an alternate one of the master cell group and the secondary cell group and the UL traffic is switched from the active UL transmission cell group to the alternate cell group in response to the determination that the UL transmission is to be switched.

Abstract: Blockage detection in a wireless transmit receive unit includes performing a radio link measurement on one or more reference signals. The radio link measurement is compared to a comparing threshold and a blockage condition is indicated in response to the comparing of the radio link measurement meeting a threshold criterion on the comparing threshold.