Abstract: A sequential driving method for driving a switch circuit of a power converter is presented. The method has the steps of driving a switch circuit which contains a power switch, defining a driving sequence; and applying sequentially an electrical parameter to the power switch, based on the driving sequence. Defining a driving sequence includes defining a plurality of different driving levels associated with the electrical parameter and defining a plurality of time windows within a switching time period. Each time window is associated with a driving level among the plurality of driving levels.

Abstract: A method includes forming an Inter-layer Dielectric (ILD) having a portion at a same level as a metal gate of a transistor. The ILD and the metal gate are parts of a wafer. The ILD is etched to form a contact opening. The wafer is placed into a PVD tool, with a metal target in the PVD tool. The metal target has a first spacing from a magnet over the metal target, and a second spacing from the wafer. A ratio of the first spacing to the second spacing is greater than about 0.02. A metal layer is deposited on the wafer, with the metal layer having a bottom portion in the contact opening, and a sidewall portion in the contact opening. An anneal is performed to react the bottom portion of the metal layer with the source/drain region to form a silicide region.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: The present disclosure relates to an image sensor integrated chip having a grid structure that reduces crosstalk between pixel regions of an image sensor chip. In some embodiments, the integrated chip has an image sensing element arranged within a substrate. An absorption enhancement structure is disposed along the back-side of the substrate. A grid structure is arranged over the absorption enhancement structure. The grid structure defines an opening arranged over the image sensing element and extends from over the absorption enhancement structure to a location within the absorption enhancement structure. By having the grid structure extend into the absorption enhancement structure, the grid structure is able to reduce crosstalk between adjacent image sensing elements by blocking radiation reflected off of non-planar surfaces of the absorption enhancement structure from traveling to an adjacent pixel region.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: The present disclosure relates to an image sensor integrated chip having a grid structure that reduces crosstalk between pixel regions of an image sensor chip. In some embodiments, the integrated chip has an image sensing element arranged within a substrate. An absorption enhancement structure is disposed along the back-side of the substrate. A grid structure is arranged over the absorption enhancement structure. The grid structure defines an opening arranged over the image sensing element and extends from over the absorption enhancement structure to a location within the absorption enhancement structure. By having the grid structure extend into the absorption enhancement structure, the grid structure is able to reduce crosstalk between adjacent image sensing elements by blocking radiation reflected off of non-planar surfaces of the absorption enhancement structure from traveling to an adjacent pixel region.

Abstract: A composite electrode prepared from porous silicon and conductive polymer binders for use in lithium-ion batteries.

Abstract: A voltage converter controller, adapted to a voltage converter circuit, includes a power switch controller and a dead-time determining circuit. The power switch controller receives a PWM signal and outputs a high-side control signal and a low-side control signal accordingly to control the conduction and cut-off of a high-side power switch and a low-side power switch respectively. When the power switch controller starts to control the low-side power switch cut-off, after a first dead-time, the power switch controller starts to control the high-side power switch conducting. The dead-time determining circuit detects a current of the low-side power switch to be larger or smaller than a threshold current when the low-side power switch is conducted, and determines the first dead-time to be a first value or a second value accordingly.

Abstract: A switching converter comprising a regulation circuit adapted to regulate an output value of the converter based on a ramp signal is provided. A feedback circuit adapted to control at least one of a delay and a slope of the ramp signal based on a parameter of the ramp signal is also provided. A method of regulating an output value of a switching converter is also presented.

Abstract: Adaptive-on-time techniques to improve the frequency variations inherent in constant-on-time COT converters are presented. A switching converter contains a power switch; a pulse generator adapted to generate a pulsed signal to switch the power switch on with a switching frequency; a ramp generator adapted to generate a ramp signal; and a controller adapted to detect a parameter of the ramp signal, compare the parameter with a reference value, and to generate a control signal based on the comparison to control the switching frequency. This allows controlling a switching frequency of the converter without increasing a noise level of the converter.

Abstract: A voltage converter controller, adapted to a voltage converter circuit, includes a power switch controller and a dead-time determining circuit. The power switch controller receives a PWM signal and outputs a high-side control signal and a low-side control signal accordingly to control the conduction and cut-off of a high-side power switch and a low-side power switch respectively. When the power switch controller starts to control the low-side power switch cut-off, after a first dead-time, the power switch controller starts to control the high-side power switch conducting. The dead-time determining circuit detects a current of the low-side power switch to be larger or smaller than a threshold current when the low-side power switch is conducted, and determines the first dead-time to be a first value or a second value accordingly.

Abstract: A switching converter, which produces an output voltage, contains a switch operable between a first state for opposing a decrease in the output voltage and a second state for opposing an increase in the output voltage. The converter also contains a circuit adapted to determine a time period during which the output voltage is decreasing, wherein during the time period the switch is in the first state. The circuit also calculates, based on the time period, a time to turn the switch from the first state to the second state to prevent the output voltage increasing above a reference value. Optionally, the time to turn the switch to the second state is based on a duty cycle of the converter.

Abstract: A wireless communications device with a wireless module, a storage unit and a controller module is provided for performing positioning measurements. The wireless module receives a plurality of positioning signals from a service network during respective position occasions. The controller module processes the received signals and performs measurements on the processed signals, wherein measurement result is taken at least three processed signals with respective position occasions, wherein each measurement result is stored in the storage unit with the information of corresponding base station and respective position occasion, wherein performing the measurements further include combining the stored measurement results for all of position occasions for generating a final measurement report.

Abstract: A method of efficient pocket detection is proposed. A wireless device determines whether it is in a transition state by using a plurality of low power-consuming sensors. The wireless device powers on a high power-consuming sensor if the device is in the transition state, or otherwise keeps the high power-consuming sensor off if the device is not in the transition state. The wireless device detects a current pocket mode of the device using the high power-consuming sensor if the device is in the transition state, or otherwise keeps a previous pocket mode if the device is not in the transition state.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A semiconductor structure is provided, which includes a semiconductor substrate, a first well region, a second well region, an active region, a shallow trench isolation (STI) and at least one deep trench isolation (DTI). The first well region of a first conductive type is on the semiconductor substrate. The second well region of a second conductive type is on the semiconductor substrate and adjacent to the first well region. The second conductive type is different from the first conductive type. The active region is on the first well region. The active region has a conductive type the same as the second conductive type of the second well region. The STI is between the first and second well regions. The DTI is below the STI. The DTI is disposed between at least a portion of the first well region and at least a portion of the second well region.

Abstract: A method for enhancing positioning measurement and a communications apparatus are disclosed. The method includes receiving an observed mobility difference of arrival (OTDOA) request and a search list of cells provided by a network at a second time point, comparing the received search list to a stored search list of cells which is received from the network at a first time point and stored in a database, searching at least one of the cells from the received search list by using different search ranges adjusted according to the comparison result, and storing the at least one of the cells in the database, and performing OTDOA measurements from the at least one of the cells. The corresponding communications apparatus includes a receiving module, a comparing module, a searching module, and a measuring module, configured to carry out the above-identified operations.

Abstract: A mobile device includes a motion detector, a processing unit, and a wireless positioning module. The motion detector is configured to detect a motion of the mobile device to obtain a motion signal. The processing unit is configured to do the followings: process the motion signal to obtain a vibration frequency and a vibration regularity of the mobile device; determine a device activity status of the mobile device according to the vibration frequency and the vibration regularity; and generate a control signal when finding that the device activity status switches from a first activity status to a second activity status. The wireless positioning module is configured to identify a first location of the mobile device in response to the control signal.

Abstract: A mobile device includes a motion detector, a processing unit, and a wireless positioning module. The motion detector is configured to detect a motion of the mobile device to obtain a motion signal. The processing unit is configured to do the followings: process the motion signal to obtain a vibration frequency and a vibration regularity of the mobile device; determine a device activity status of the mobile device according to the vibration frequency and the vibration regularity; and generate a control signal when finding that the device activity status switches from a first activity status to a second activity status. The wireless positioning module is configured to identify a first location of the mobile device in response to the control signal.

Abstract: A method of efficient pocket detection is proposed. A wireless device determines whether it is in a transition state by using a plurality of low power-consuming sensors. The wireless device powers on a high power-consuming sensor if the device is in the transition state, or otherwise keeps the high power-consuming sensor off if the device is not in the transition state. The wireless device detects a current pocket mode of the device using the high power-consuming sensor if the device is in the transition state, or otherwise keeps a previous pocket mode if the device is not in the transition state.