Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: Systems and methods for a parameter adjustment of a multi-energy computed tomography (CT) device is provided. The systems and methods may obtain, by at least one processor, a parameter set associated with a scan to be performed using a multi-energy CT device. The parameter set may include multiple scanning parameters and multiple reconstruction parameters. The systems and methods may also determine, by the at least one processor, a maximum pitch associated with the scan based on a correlation relationship and the parameter set. The correlation relationship may describe a correlation between a pitch of the multi-energy CT device and the parameter set.

Abstract: An impeller includes a hub and a plurality of blades. The blades are arranged around the hub, and each blade includes a leading edge, a blade tip, a root portion, a trailing edge, a windward side and a leeward side. The windward side including a first turning point and a second turning point, a first vertical height difference is formed from the blade tip to the first turning point, and a second vertical height difference is formed from the first turning point to the second turning point, and the first vertical height difference is greater than the second vertical height difference. The impeller apparently reduces the noise.

Abstract: Provided are a modal window control method, a device, and a storage medium. The method comprises: acquiring a modal window structure, and adding the modal window structure to a modal stack; in response to updating a state of each window existing at a current interface according to a created loop update event, extracting a system event from a system message queue; in response to a modal window existing at the current interface, determining whether the modal window is the same as a window pointed by a structure located on a top of the modal stack; and in response to the modal window being the same as the window pointed by the structure located on the top of the modal stack, controlling the window located on the top of the modal stack to process the system event.

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Abstract: A process for treating aged oil by electron beam irradiation is disclosed, comprising the following steps: step 1, homogenizing the aged oil and then feeding the aged oil into a distributor; step 2, forming a liquid layer having a certain thickness on the distributor; step 3, installing and debugging an electron beam irradiation device on the distributor; step 4, installing and debugging a phased-array microwave emitter on the distributor after installing and debugging the electron beam irradiation device; step 5, turning on the electron beam irradiation device and the phased-array microwave emitter; and step 6, dividing the treated aged oil and then allowing the aged oil after dividing to enter an oil pool and a water pool for standing. Oil flows out from an upper layer of the oil pool, a lower layer of the oil pool flows back to an aged oil storage pool.

Abstract: The present disclosure provides a method for preparing lithium iron phosphate from ferric hydroxyphosphate, including: purifying ferrous sulfate to form a ferrous sulfate solution, adding hydrogen peroxide, phosphoric acid, an ammonium dihydrogen phosphate solution and ammonia water into the ferrous sulfate solution and then reacting to form a mixed slurry, holding the mixed slurry at a temperature for a period of time, and then washing with water and subjecting to press filtration to form ferric hydroxyphosphate precursors with different iron-phosphorus ratios; then flash drying, sintering at a high temperature, and pulverizing to obtain ferric hydroxyphosphate precursors with different iron-phosphorus ratios and different specific surface areas.

Abstract: A device a includes a substrate, two source/drain (S/D) features over the substrate, and semiconductor layers suspended over the substrate and connecting the two S/D features. The device further includes a dielectric layer disposed between two adjacent layers of the semiconductor layers and an air gap between the dielectric layer and one of the S/D features, where a ratio between a length of the air gap to a thickness of the first dielectric layer is in a range of 0.1 to 1.0.

Abstract: A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: Examples in this application disclose information sharing methods, media, and systems. One example computer-implemented method includes receiving, by a trusted execution environment (TEE), a first sharing request from a first institution and a second sharing request from a second institution, where the first sharing request comprises a user identity of a first user and first anti-money laundering (AML) risk information and the second sharing request comprises a user identity of a second user and second AML risk information, comparing the user identity of the first user with the user identity of the second user, in response to that the user identity of the first user is the same as the user identity of the second user, combining the first AML risk information and the second AML risk information, and sending the combined first AML risk information and second AML risk information to the first institution and the second institution.

Abstract: The present specification discloses video matching. In a computer-implemented method, a plurality of feature vectors of a target video is obtained. A candidate video similar to the target video is retrieved from a video database based on the plurality of feature vectors of the target video. A time domain similarity matrix feature map is constructed between the target video and the candidate video based on the target video and the candidate video. Using the time domain similarity matrix feature map as an input into a deep learning detection model, a video segment matching the target video in the candidate video and a corresponding similarity is output.

Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.

Abstract: The present disclosure is directed to generative models for datasets constrained by marginal constraints. One method includes receiving a request to generate a target dataset based on a marginal constraint for a source dataset. A first object occurs at a source frequency in the source dataset. The marginal constraint indicates a target frequency for the first object. The source dataset encodes a set of co-occurrence frequencies for a plurality of object pairs. A source generative model is accessed. The source generative model includes a first module and a second module that are trained on the source dataset. The second module is updated based on the marginal constraint. An adapted generative model is generated that includes the first module and the updated second module. The target dataset is generated based on the adapted generative model. The first object occurs at the target frequency in the target dataset. The target dataset encodes the set of co-occurrence frequencies for the plurality of object pairs.

Abstract: Provided is a method for treating cancer by administering to a subject in need thereof with a pharmaceutical composition including a benzenesulfonamide derivative in combination with a cancer immunotherapeutic agent such as the immune check point inhibitor (ICI).

Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

Abstract: A downhole throttling device based on wireless control includes an inlet nozzle, a throttling assembly, an electrical sealing cylinder, a gas guide cylinder, a lower adapter sleeve, an end socket, a female sleeve, and electrical components. The inlet nozzle is connected to the throttling assembly, the throttling assembly is connected to the electrical sealing cylinder and the gas guide cylinder, the electrical sealing cylinder and the gas guide cylinder are both connected to the lower adapter sleeve, the lower adapter sleeve is respectively connected to the end socket and the female sleeve, and the electrical components are arranged in the electrical sealing cylinder. A throttling effect is achieved by detecting the temperature and pressure in a tube by a temperature/pressure sensor in the electrical components and controlling a motor to rotate a movable valve in the throttling assembly by a circuit control assembly, thereby achieving wireless control over downhole throttling.