Abstract: A computer system includes plural servers in which virtual machines are arranged; plural power supply apparatuses that supply electric power to the servers; and a control apparatus that controls arrangement of the virtual machines in the servers. The control apparatus solves an integer programming problem whose objective function is total power consumption by the servers and by the power supply apparatuses, the total power consumption being described as a function of the arrangement of the virtual machines; and arranges the virtual machines based on a solution of the integer programming problem.

Abstract: An image display apparatus having sub-pixels of four colors is provided in which the resolution when an image is two-dimensionally displayed is not affected, and deterioration in the color balance of a three-dimensionally displayed image is suppressed. In the image display apparatus, the arrangement of a sub-pixel for displaying red for a left eye and a sub-pixel for displaying green for a right eye has been replaced with the arrangement of a sub-pixel (Lg1) for displaying green for the left eye and a sub-pixel (Rr1) for displaying red for the right eye. The arrangement of a sub-pixel for displaying blue for the left eye and a sub-pixel for displaying yellow for the right eye has been replaced with the arrangement of a sub-pixel (Lx1) for displaying yellow for the left eye and a sub-pixel (Rb1) for displaying blue for the right eye. Replacement with the sub-pixel and the sub-pixel and replacement with the sub-pixel and the sub-pixel are made for every other pixel.

Abstract: A graphite sheet preventing leakage of a heat radiating member when a fluid heat radiating member such as grease is used and improving heat radiation performance is provided. A graphite sheet includes a first main surface and a second main surface opposite to the first main surface and has a large anisotropic thermal conductivity in a main surface direction. The graphite sheet includes a first concave portion provided on the first main surface and having a first bottom surface, a second concave portion provided on the second main surface and having a second bottom surface, a thin film portion formed in a region in which the first bottom surface and the second bottom surface are overlapped with each other, and a connecting hole penetrating the thin film portion and allowing the first concave portion and the second concave portion to communicate with each other.

Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

Abstract: A transfer device increments a value of a phase ID at predetermined time intervals, and registers a packet ID of a transmitted data packet and a phase ID on a determination table in an associated manner. When having received a response packet from a receiving-side transfer device, the transfer device determines an unarrived packet on the basis of received packet IDs contained in the received response packet and packet IDs of transmitted data packets. Then, the transfer device determines whether a data packet corresponding to the unarrived packet is lost or on-the-fly from a relationship between a phase ID of the unarrived packet and the maximum phase contained in the received response packet, and retransmits the corresponding data packet only if it is lost.

Abstract: A transfer device allocates, within the range of the maximum communication band of a network that a plurality of groups of applications use in common, a communication band equal to or larger than the minimum band for each of the groups. Furthermore, the transfer device converts, within a communication band allocated to each group, TCP data received from a transmission source of data to UDP data, transfers the UDP data to a transmission destination, and retransmits retransmission data in response to a retransmission request of the UDP data.

Abstract: The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.

Abstract: An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.

Abstract: [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency. [Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1?a)Li[NixCoyMn1-x-y]O2??(1) (wherein, 0<a<1, 0<x<0.5, and 0<y<0.3) and satisfies the relational expression: 2x+y<1.

Abstract: Gel for radiation dosimeter including a gel part (A) and a gel part (B) that become cloudy when exposed to a fixed dose or more, wherein said gel part (A) exposed to more than a specified dose above the fixed dose maintains a cloudy state regardless of the decrease in external temperature; and said gel part (B) exposed to less than the specified dose above the fixed dose changes gradually from a cloudy state into a transparent state according to the decrease in external temperature.

Abstract: A flush toilet device has a toilet body having a bowl section, rim water discharge opening, a jet water discharge opening, and a discharge water trap conduit. A pressurizing pump is provided for pressurizing flush water contained in a cistern to supply it to the jet water discharge opening. A pump controller regulates the operation and rotation speed of the pressurizing pump to regulate the flow speed and flow rate of flush water discharged from the jet water discharge opening so that flush water at a first flow rate for generating a siphon effect is discharged and then at a second flow rate is discharged at the end of the siphon effect generated by the first flow rate. The second flow rate having a flow speed that can carry away human wastes and causes the siphon effect to continue by closing the cross section of any portion of the discharge water trap conduit.

Abstract: A semiconductor device has 3n, 3n+1, and 3n+2 connector lines that are formed together. The 3n+1 connector line is located between the 3n connector line and the 3n+2 connector line. The first fringe pattern pad is located at the terminus of the 3n connector line and is formed with a wider space than the width of the 3n connector line. The second fringe pattern pad is located at the terminus of the 3n+1 connector line and is formed with a wider width than the width of the 3n+1 connector line. The third fringe pattern pad is located at the terminus of the 3n+2 connector line and is formed with a wider width than the width of the 3n+2 connector line. The second fringe pattern pad is positioned closer to a memory array as compared with the terminus of each connector line with the first and third fringe pattern pads.

Abstract: A data transfer device and method include obtaining a compression ratio and a compression speed of data for each of a plurality of compression levels, obtaining a compression ratio of data for each of the compression levels, adding a predicted time required for the compression and a predicted time required for the transfer of the data for each of the compression levels to determine a compression level for which the added predicted time is shortest, compressing the data to be transferred at the determined compression level and transferring the compressed to a transfer destination.

Abstract: A data transfer method transfers data encoded with a loss correction code by using a protocol having no error correction function. The method includes acquiring a data size of transfer target data; acquiring a relationship between a code length of the loss correction code and a transfer time for the acquired data size of the transfer target data; determining an optimum code length of the loss correction code for encoding the transfer target data based on the acquired relationship between the code length and the transfer time for the acquired data size; and encoding the target data with the loss correction code having the optimum code length.

Abstract: In a mobile terminal provided with an encoded data recording function, there is assumed a condition in which a picture frame transmitted from the terminal of a communication partner is reproduced by means of decoding processing and is displayed on a LCD (34) during wireless TV phone communication. In this condition, when a user carries out a picture recording start operation, display picture data reproduced by means of decoding processing in the multimedia processing section (24) to be displayed on the LCD (34) are recorded in a main recording section (26).

Abstract: A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low.

Abstract: A system stores identification information for identification of a part associated with installation information for designation of a position where the part is installed in a first apparatus; receives the identification information about the part to be read and transmits it by a second apparatus; and retrieves the received identification information from the storage unit, and generates a first composite image by combining installation information corresponding to the retrieved identification information with an image of the first apparatus.

Abstract: A power control apparatus includes a processor that causes thermal fluid analysis of the amount of increase in power consumption for cooling a plurality of servers, where the increase in power consumption is consequent to an increase in the volume of tasks at each server among the servers. Based on analysis results obtained by the thermal fluid analysis, the processor selects from among the servers, a server to execute a task and causes the selected server to execute the task.

Abstract: The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation.

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.