Abstract: An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.

Abstract: [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency. [Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1?a)Li[NixCoyMn1-x-y]O2??(1) (wherein, 0<a<1, 0<x<0.5, and 0<y<0.3) and satisfies the relational expression: 2x+y<1.

Abstract: Gel for radiation dosimeter including a gel part (A) and a gel part (B) that become cloudy when exposed to a fixed dose or more, wherein said gel part (A) exposed to more than a specified dose above the fixed dose maintains a cloudy state regardless of the decrease in external temperature; and said gel part (B) exposed to less than the specified dose above the fixed dose changes gradually from a cloudy state into a transparent state according to the decrease in external temperature.

Abstract: A flush toilet device has a toilet body having a bowl section, rim water discharge opening, a jet water discharge opening, and a discharge water trap conduit. A pressurizing pump is provided for pressurizing flush water contained in a cistern to supply it to the jet water discharge opening. A pump controller regulates the operation and rotation speed of the pressurizing pump to regulate the flow speed and flow rate of flush water discharged from the jet water discharge opening so that flush water at a first flow rate for generating a siphon effect is discharged and then at a second flow rate is discharged at the end of the siphon effect generated by the first flow rate. The second flow rate having a flow speed that can carry away human wastes and causes the siphon effect to continue by closing the cross section of any portion of the discharge water trap conduit.

Abstract: A semiconductor device has 3n, 3n+1, and 3n+2 connector lines that are formed together. The 3n+1 connector line is located between the 3n connector line and the 3n+2 connector line. The first fringe pattern pad is located at the terminus of the 3n connector line and is formed with a wider space than the width of the 3n connector line. The second fringe pattern pad is located at the terminus of the 3n+1 connector line and is formed with a wider width than the width of the 3n+1 connector line. The third fringe pattern pad is located at the terminus of the 3n+2 connector line and is formed with a wider width than the width of the 3n+2 connector line. The second fringe pattern pad is positioned closer to a memory array as compared with the terminus of each connector line with the first and third fringe pattern pads.

Abstract: A data transfer device and method include obtaining a compression ratio and a compression speed of data for each of a plurality of compression levels, obtaining a compression ratio of data for each of the compression levels, adding a predicted time required for the compression and a predicted time required for the transfer of the data for each of the compression levels to determine a compression level for which the added predicted time is shortest, compressing the data to be transferred at the determined compression level and transferring the compressed to a transfer destination.

Abstract: In a mobile terminal provided with an encoded data recording function, there is assumed a condition in which a picture frame transmitted from the terminal of a communication partner is reproduced by means of decoding processing and is displayed on a LCD (34) during wireless TV phone communication. In this condition, when a user carries out a picture recording start operation, display picture data reproduced by means of decoding processing in the multimedia processing section (24) to be displayed on the LCD (34) are recorded in a main recording section (26).

Abstract: A data transfer method transfers data encoded with a loss correction code by using a protocol having no error correction function. The method includes acquiring a data size of transfer target data; acquiring a relationship between a code length of the loss correction code and a transfer time for the acquired data size of the transfer target data; determining an optimum code length of the loss correction code for encoding the transfer target data based on the acquired relationship between the code length and the transfer time for the acquired data size; and encoding the target data with the loss correction code having the optimum code length.

Abstract: A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low.

Abstract: A system stores identification information for identification of a part associated with installation information for designation of a position where the part is installed in a first apparatus; receives the identification information about the part to be read and transmits it by a second apparatus; and retrieves the received identification information from the storage unit, and generates a first composite image by combining installation information corresponding to the retrieved identification information with an image of the first apparatus.

Abstract: A power control apparatus includes a processor that causes thermal fluid analysis of the amount of increase in power consumption for cooling a plurality of servers, where the increase in power consumption is consequent to an increase in the volume of tasks at each server among the servers. Based on analysis results obtained by the thermal fluid analysis, the processor selects from among the servers, a server to execute a task and causes the selected server to execute the task.

Abstract: The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation.

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract: A method of controlling air conditioning to cool servers, the method includes selecting, when the number of operating servers is a certain threshold number or more, a first mode, in which the pressure of a cold aisle is set higher than the pressure of a hot aisle; selecting, when the number of operating servers is less than the certain threshold number, a second mode, in which the pressure of the cold aisle is set equal to the pressure of the hot aisle; and informing the operating servers of whether a current mode is the first mode or the second mode, and when the current mode is the first mode, driving fans of the servers at a minimum rotational speed in a specification, and when the current mode is the second mode, driving the fans of the servers at a rotational speed higher than the minimum rotational speed in the specification.

Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

Abstract: An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.

Abstract: A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.

Abstract: An IP-data transmitting apparatus performs an error correction coding by classifying data into a layer indicative of the priority order of the data based on importance and vulnerability of information included in the data, and combining a plurality of data components into combination patterns. The number of the combination patterns is specified with respect to each layer with predetermined priority order.