Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Abstract: A light emitting device includes: a first blue light emitting element and a second blue light emitting element, peak wavelengths of which are different from each other, and a fluorescent substance layer comprising: a green fluorescent substance, which is excited by emission lights from the first blue light emitting element and the second blue light emitting element to emit green lights having emission spectrums having a first wavelength indicating a first intensity and a second wavelength indicating a second intensity smaller than the first intensity, respectively; and a red fluorescent substance, which has an absorption spectrum in which absorption is less in the second wavelength than in the first wavelength and which is excited by the emission lights from the first blue light emitting element and the second blue light emitting element to emit red lights.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Abstract: A strainer is provided for a snare drum having a bottom drumhead. The strainer includes a snare assembly including a snare carrier and a plurality of snares coupled therewith. A throw-side component includes a bracket member releasably mounted to the snare drum and a slide member moveable relative to the bracket member and engaging the snare carrier. The slide member includes a slider handle fixed thereto and a locking toggle such that when the strainer is coupled to the snare drum, manual movement of the slider handle causes the snares to move toward the bottom drumhead, with the locking toggle being constructed and arranged to be 1) moved to a first, locking position engaging the bracket member so as to lock the slide member to the bracket member, and 2) moved to a second, release position releasing the slide member from engagement with the bracket member.

Abstract: A method includes calculating a size of a buffer included in a client device by multiplying a band by a round trip time, calculating an integer value by turning a real number into an integer, and setting the integer value as an unused size, the real number being obtained by dividing the size by a transmission data size, setting a value obtained by dividing the round trip time by the integer value or a value obtained by dividing the transmission data size by the band as a transmission interval, generating image data of a screen of a remote desktop and transmitting the image data to the client device when the unused size is greater than the first value, and subtracting a second value from the unused size, and every time a response to the image data is received, adding the second value to the unused size.

Abstract: An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.

Abstract: A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.

Abstract: A liquid crystal display device (1) includes an adjustment setting section (11), a color component adjusting section (14), and a background color setting section (12). In a case where the adjustment setting section (11) carries out color component adjustment, (i) the background color setting section (12) carries out a second process of setting a background color and (ii) the color component adjusting section (14) carries out a first process of converting a grayscale level of a picture element. In a case where the adjustment setting section (11) does not carry out the color component adjustment, (i) the background color setting section (12) does not carry out the second process and (ii) the color component adjusting section (14) does not carry out the first process.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

Abstract: A network includes first through third communication apparatuses. The second communication apparatus identifies, from packets received from the first communication apparatus, forwarding packets that are packets to be transmitted to the third communication apparatus, and measures the interval in receiving the forwarding packets. The second communication apparatus forwards the forwarding packets to the third communication apparatus. The second communication apparatus receives report information that reports the reception state of forwarding packets from the third communication apparatus, and uses the report information to select target packets that are packets for which success of reception has not been reported from the third communication apparatus in the packets that were forwarded to the third communication apparatus.

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract: A display device disclosed includes a liquid crystal panel (6), and an image optimization circuit (4) for switching, in accordance with an update frequency of image data, between (i) a first mode in which a liquid crystal driver (7) is driven at a first driving frequency and (ii) a second mode in which the liquid crystal driver (7) is driven at a second driving frequency lower than the first driving frequency. The display device can therefore be used even in a case where a transmission path for image data is limited and optimally display high-resolution image data with reduced electric power consumption.

Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

Abstract: A transfer device increments a value of a phase ID at predetermined time intervals, and registers a packet ID of a transmitted data packet and a phase ID on a determination table in an associated manner. When having received a response packet from a receiving-side transfer device, the transfer device determines an unarrived packet on the basis of received packet IDs contained in the received response packet and packet IDs of transmitted data packets. Then, the transfer device determines whether a data packet corresponding to the unarrived packet is lost or on-the-fly from a relationship between a phase ID of the unarrived packet and the maximum phase contained in the received response packet, and retransmits the corresponding data packet only if it is lost.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: An input device includes a touch panel including a touch sensor that detects an operation by an operator, and a display. The input device executes information processing based on information input on the touch sensor. The touch sensor is capable of changing a detection output to the information processing means, in accordance with a position of an object at a distance from the touch sensor. The input device also determines whether an operation on the touch sensor is performed with an operator's right hand or left hand, based on a distribution of the detection output from the touch sensor.

Abstract: A thermal fluid analysis method, includes: calculating, by a computer, a first component of a new first sample different from a plurality of second samples; setting a second component obtained by unitizing the first component to a first base; adding the first base to a plurality of second bases of the plurality of second samples when the first component is greater than a threshold value; and correcting a low-dimensional model that expresses a plurality samples with superposition of a plurality of bases by using the first base and the plurality of second bases.

Abstract: An electronic apparatus includes a first substrate, an electronic component mounted on a first surface of the first substrate, a plurality of first lands on a second surface of the first substrate that is opposite the first surface, the first lands electrically connected to the electronic component and arranged at a first interval, and a plurality of second lands on the second surface of the first substrate and surrounding the first lands, the second lands arranged at a second interval that is smaller than the first interval.