Abstract: An input device includes a touch panel including a touch sensor that detects an operation by an operator, and a display. The input device executes information processing based on information input on the touch sensor. The touch sensor is capable of changing a detection output to the information processing means, in accordance with a position of an object at a distance from the touch sensor. The input device also determines whether an operation on the touch sensor is performed with an operator's right hand or left hand, based on a distribution of the detection output from the touch sensor.

Abstract: A thermal fluid analysis method, includes: calculating, by a computer, a first component of a new first sample different from a plurality of second samples; setting a second component obtained by unitizing the first component to a first base; adding the first base to a plurality of second bases of the plurality of second samples when the first component is greater than a threshold value; and correcting a low-dimensional model that expresses a plurality samples with superposition of a plurality of bases by using the first base and the plurality of second bases.

Abstract: An electronic apparatus includes a first substrate, an electronic component mounted on a first surface of the first substrate, a plurality of first lands on a second surface of the first substrate that is opposite the first surface, the first lands electrically connected to the electronic component and arranged at a first interval, and a plurality of second lands on the second surface of the first substrate and surrounding the first lands, the second lands arranged at a second interval that is smaller than the first interval.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.

Abstract: A prior simulation of a velocity field and a temperature field is carried out, and snapshot data of the velocity field and that of the temperature field are collected during the prior simulation. Then principal component analysis on the collected snapshot data obtains velocity-field and temperature field dimension transformation matrixes, on the based on which the analysis models of the velocity field and temperature field having respective first degrees of freedom are converted into reduced degree-of-freedom models. Consequently, a simulation of the velocity field and the temperature field is carried out using models having respective reduced degrees of freedom (i.e., second degrees of freedom).

Abstract: In the event of modifying analysis condition, after the simulation of a first time step carried out when the analysis condition is modified finishes and before the simulation of a second time step next after the first step starts, the modified analysis condition is referred and the simulation based on the modified analysis condition is carried out in the next time step.

Abstract: A semiconductor device has 3n, 3n+1, and 3n+2 connector lines that are formed together. The 3n+1 connector line is located between the 3n connector line and the 3n+2 connector line. The first fringe pattern pad is located at the terminus of the 3n connector line and is formed with a wider space than the width of the 3n connector line. The second fringe pattern pad is located at the terminus of the 3n+1 connector line and is formed with a wider width than the width of the 3n+1 connector line. The third fringe pattern pad is located at the terminus of the 3n+2 connector line and is formed with a wider width than the width of the 3n+2 connector line. The second fringe pattern pad is positioned closer to a memory array as compared with the terminus of each connector line with the first and third fringe pattern pads.

Abstract: The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation.

Abstract: A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing into an oxide semiconductor film.

Abstract: A touch panel driving device includes: a noise detection section (43) that detects the presence or absence of at least external noise of an input operation performed on a touch panel (30); and a liquid crystal drive parameter setting section (51) that, in a case where the presence of external noise has been detected by the noise detection section (43), executes a process for reducing the external noise by adjusting a cycle or duration of a 1H period.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

Abstract: The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation.

Abstract: In an electromagnetic control valve configured to cancel out forces acting on a valve body by differential pressure using a diaphragm, pressure tightness and durability of the diaphragm are improved. A needle-shaped projection is formed on a lower end of a piston section of a valve rod that is a drive shaft. An insertion hole is formed in the center of a diaphragm guide. The center of the diaphragm is stuck on the needle-shaped projection to make it pass through it. The needle-shaped projection is inserted into the insertion hole in the diaphragm guide. An end of the needle-shaped projection is spot-welded. The diaphragm is stuck with the needle-shaped projection to fix it to the valve rod without cutting a base fabric of the diagram. A needle-shaped projection may be formed on the diaphragm guide and an insertion hole may be formed in the valve rod.

Abstract: A liquid phase diffusion bonded pipe joint comprised of metal pipes or a metal pipe and a joint pipe joined by liquid phase diffusion bonding, the liquid phase diffusion bonded pipe joint comprised of a metal joint provided with a tapered slanted part press-fit into an end of a metal pipe by a thrust in a pipe axial direction while expanding the metal pipe in inside diameter and tightly engaging with the end and a joining surface part continuing from the tapered slanted part and joined with an end face of the metal pipe by liquid phase diffusion bonding and a metal pipe tightly engaging with the tapered slanted part in the expanded state and with an end face joined with the joining surface part by liquid phase diffusion bonding.

Abstract: A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.