Abstract: A method of controlling air conditioning to cool servers, the method includes selecting, when the number of operating servers is a certain threshold number or more, a first mode, in which the pressure of a cold aisle is set higher than the pressure of a hot aisle; selecting, when the number of operating servers is less than the certain threshold number, a second mode, in which the pressure of the cold aisle is set equal to the pressure of the hot aisle; and informing the operating servers of whether a current mode is the first mode or the second mode, and when the current mode is the first mode, driving fans of the servers at a minimum rotational speed in a specification, and when the current mode is the second mode, driving the fans of the servers at a rotational speed higher than the minimum rotational speed in the specification.

Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

Abstract: An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.

Abstract: A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.

Abstract: An IP-data transmitting apparatus performs an error correction coding by classifying data into a layer indicative of the priority order of the data based on importance and vulnerability of information included in the data, and combining a plurality of data components into combination patterns. The number of the combination patterns is specified with respect to each layer with predetermined priority order.

Abstract: A flush toilet for prevention of reverse flow and uses a reduced number of parts. The flush toilet includes a toilet body having a bowl, a rim water outlet, a jet water outlet, and a discharge water trap piping; a water storage tank. A flush water supply mechanism is provided for supplying flush water to the rim water outlet and the water storage tank and a pressurizing pump pressurizes the flush water in the water storage tank. A jet-side water supply path supplies the pressurized flush water to the jet water outlet. An overflow path is provided having a lower end connected to the downstream side of the highest position of the jet-side water supply path and an upper end opened in the upper part in the water storage tank with a flapper valve provided in the overflow path.

Abstract: A server device includes: electronic devices; a housing that houses the electronic devices; at least one fan; air volume control units configured to adjust a volume of cooling airflow which is generated by rotation of the at least one fan and is ventilated through the electronic devices by opening and closing of respective valves; a valve opening control unit configured to control valve opening degrees of the air volume control units so that temperatures inside the electronic devices become a given target temperature; a fan control unit configured to run the at least one fan at a fan rotating speed that achieves a volume of cooling airflow to make temperatures inside the electronic devices become the given target temperature at a valve opening degree higher than the valve opening degrees that the valve opening control unit controls.

Abstract: A prior simulation of a velocity field and a temperature field is carried out, and snapshot data of the velocity field and that of the temperature field are collected during the prior simulation. Then principal component analysis on the collected snapshot data obtains velocity-field and temperature field dimension transformation matrixes, on the based on which the analysis models of the velocity field and temperature field having respective first degrees of freedom are converted into reduced degree-of-freedom models. Consequently, a simulation of the velocity field and the temperature field is carried out using models having respective reduced degrees of freedom (i.e., second degrees of freedom).

Abstract: A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

Abstract: In the event of modifying analysis condition, after the simulation of a first time step carried out when the analysis condition is modified finishes and before the simulation of a second time step next after the first step starts, the modified analysis condition is referred and the simulation based on the modified analysis condition is carried out in the next time step.

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Abstract: [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency. [Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1?a)Li[NixCoyMn1-x-y]O2??(1) (wherein, 0<a<1, 0<x<0.5, and 0<y<0.3) and satisfies the relational expression: 2x+y<1.

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract: A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced.

Abstract: Provided are: a conducting polymer composite structure, which does not require any separator between electrodes, can be reduced in size, can be produced at reduced cost and with improved workability, and has excellent impact resistance; a process for producing the conducting polymer composite structure; and an actuator element using the conducting polymer composite structure. The conducting polymer composite structure includes at least one conducting polymer layer, and is a structure in which a surface layer of the conducting polymer layer is an insulating layer.

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

Abstract: A semiconductor storage device according to an embodiment includes a memory cell comprising a charge accumulate layer above a semiconductor substrate and a control gate above the charge accumulate layer. The charge accumulate layer is capable of accumulating charges therein. The control gate is configured to control an amount of the charges accumulated in the charge accumulate layer. The control gate comprises a lower-layer control gate part of metal or metallic silicide which is processable by etching, and an upper-layer control gate part of a material different from that of the lower-layer control gate part.

Abstract: In a data encoding process: data is encoded by using unit bit series obtained from an encoding bit series; the encoding bit series is searched for a first bit series identical to a portion of the encoded data; the portion is substituted with a second bit series which includes a leading code indicating a leading position of a substitution range and position information indicating the position of the first bit series in the encoding bit series. In a data decoding process: the position information is detected from the substitution range in received data after the leading code is detected in the data; a substitution bit series is extracted from the position in the encoding bit series indicated by the position information; and the data in the substitution range is substituted with the substitution bit series so as to restore the encoded data.