Abstract: A flush toilet for prevention of reverse flow and uses a reduced number of parts. The flush toilet includes a toilet body having a bowl, a rim water outlet, a jet water outlet, and a discharge water trap piping; a water storage tank. A flush water supply mechanism is provided for supplying flush water to the rim water outlet and the water storage tank and a pressurizing pump pressurizes the flush water in the water storage tank. A jet-side water supply path supplies the pressurized flush water to the jet water outlet. An overflow path is provided having a lower end connected to the downstream side of the highest position of the jet-side water supply path and an upper end opened in the upper part in the water storage tank with a flapper valve provided in the overflow path.

Abstract: A server device includes: electronic devices; a housing that houses the electronic devices; at least one fan; air volume control units configured to adjust a volume of cooling airflow which is generated by rotation of the at least one fan and is ventilated through the electronic devices by opening and closing of respective valves; a valve opening control unit configured to control valve opening degrees of the air volume control units so that temperatures inside the electronic devices become a given target temperature; a fan control unit configured to run the at least one fan at a fan rotating speed that achieves a volume of cooling airflow to make temperatures inside the electronic devices become the given target temperature at a valve opening degree higher than the valve opening degrees that the valve opening control unit controls.

Abstract: A prior simulation of a velocity field and a temperature field is carried out, and snapshot data of the velocity field and that of the temperature field are collected during the prior simulation. Then principal component analysis on the collected snapshot data obtains velocity-field and temperature field dimension transformation matrixes, on the based on which the analysis models of the velocity field and temperature field having respective first degrees of freedom are converted into reduced degree-of-freedom models. Consequently, a simulation of the velocity field and the temperature field is carried out using models having respective reduced degrees of freedom (i.e., second degrees of freedom).

Abstract: A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

Abstract: In the event of modifying analysis condition, after the simulation of a first time step carried out when the analysis condition is modified finishes and before the simulation of a second time step next after the first step starts, the modified analysis condition is referred and the simulation based on the modified analysis condition is carried out in the next time step.

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract: [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency. [Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1?a)Li[NixCoyMn1-x-y]O2??(1) (wherein, 0<a<1, 0<x<0.5, and 0<y<0.3) and satisfies the relational expression: 2x+y<1.

Abstract: A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced.

Abstract: Provided are: a conducting polymer composite structure, which does not require any separator between electrodes, can be reduced in size, can be produced at reduced cost and with improved workability, and has excellent impact resistance; a process for producing the conducting polymer composite structure; and an actuator element using the conducting polymer composite structure. The conducting polymer composite structure includes at least one conducting polymer layer, and is a structure in which a surface layer of the conducting polymer layer is an insulating layer.

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

Abstract: A semiconductor storage device according to an embodiment includes a memory cell comprising a charge accumulate layer above a semiconductor substrate and a control gate above the charge accumulate layer. The charge accumulate layer is capable of accumulating charges therein. The control gate is configured to control an amount of the charges accumulated in the charge accumulate layer. The control gate comprises a lower-layer control gate part of metal or metallic silicide which is processable by etching, and an upper-layer control gate part of a material different from that of the lower-layer control gate part.

Abstract: In a data encoding process: data is encoded by using unit bit series obtained from an encoding bit series; the encoding bit series is searched for a first bit series identical to a portion of the encoded data; the portion is substituted with a second bit series which includes a leading code indicating a leading position of a substitution range and position information indicating the position of the first bit series in the encoding bit series. In a data decoding process: the position information is detected from the substitution range in received data after the leading code is detected in the data; a substitution bit series is extracted from the position in the encoding bit series indicated by the position information; and the data in the substitution range is substituted with the substitution bit series so as to restore the encoded data.

Abstract: The present invention provides a method for producing fluorosulfonylimides more safely, rapidly and efficiently, which enables suppression of production of by-products, and fluorosulfonylimides. The method for producing a fluorosulfonylimide salt of the present invention includes a step of reacting a fluoride compound containing at least one element selected from the group consisting of elements of Group 11 to Group 15 and Period 4 to Period 6 (excluding arsenic and antimony) with a compound represented by the following general formula (I) to give a fluorosulfonylimide salt represented by the general formula (II): [Chemical Formula 1] wherein R1 denotes at least one element selected from the group consisting of elements of Group 11 to Group 15 and Period 4 to Period 6 (excluding arsenic and antimony); R3 denotes fluorine, chlorine or a fluorinated alkyl group having 1 to 6 carbon atoms; R4 denotes fluorine or a fluorinated alkyl group having 1 to 6 carbon atoms; and m denotes an integer of 2 or 3.

Abstract: A data transfer method transfers data encoded with a loss correction code by using a protocol having no error correction function. The method includes acquiring a data size of transfer target data; acquiring a relationship between a code length of the loss correction code and a transfer time for the acquired data size of the transfer target data; determining an optimum code length of the loss correction code for encoding the transfer target data based on the acquired relationship between the code length and the transfer time for the acquired data size; and encoding the target data with the loss correction code having the optimum code length.

Abstract: The present invention provides a method for producing a fluorisulfonylimide salt, which enables reducing the impurity content and continuous operation for a long time, and a fluorosulfonyl imide salt. The fluorosulfonyl imide salt of the present invention has a K content of 10,000 ppm or less. The method for producing a fluorosulfonyl imide salt of the present invention is that after a fluorination reaction of chlorosulfonyl imde or a salt thereof, the reaction solution is brought into contact with an aqueous alkaline solution so as to remove impurities. The fluorosulfonyl imide salt of the present invention, in which various impirities are reduced to extremely low levels, is useful as an electrolyte used in a lithium secondary battery, a capacitor or the like, an ionic liquid, or an intermediate for a sulfonyl imide salt, and the like. It is expected that use of the fluorosulfonyl imide salt of the present invention as an electrolyte leads to a high-performance electrochemical device.

Abstract: Gel for radiation dosimeter including a gel part (A) and a gel part (B) that become cloudy when exposed to a fixed dose or more, wherein said gel part (A) exposed to more than a specified dose above the fixed dose maintains a cloudy state regardless of the decrease in external temperature; and said gel part (B) exposed to less than the specified dose above the fixed dose changes gradually from a cloudy state into a transparent state according to the decrease in external temperature.

Abstract: A calculation area including a three-dimensional (3D) product model is specified, and a plurality of cross-sectional images is cut out from the calculation area. Each cross-sectional image is divided into plural pieces of voxel data, and voxel data of a gap area of the inside of a product is generated from the plural pieces of voxel data. A 3D model of the gap area of the inside of the product is generated, and also a volume of the gap area of the inside of the product is calculated, based on the voxel data of the gap area obtained by each cross-sectional image.

Abstract: A graphite sheet preventing leakage of a heat radiating member when a fluid heat radiating member such as grease is used and improving heat radiation performance is provided. A graphite sheet includes a first main surface and a second main surface opposite to the first main surface and has a large anisotropic thermal conductivity in a main surface direction. The graphite sheet includes a first concave portion provided on the first main surface and having a first bottom surface, a second concave portion provided on the second main surface and having a second bottom surface, a thin film portion formed in a region in which the first bottom surface and the second bottom surface are overlapped with each other, and a connecting hole penetrating the thin film portion and allowing the first concave portion and the second concave portion to communicate with each other.

Abstract: A liquid phase diffusion bonded pipe joint comprised of metal pipes or a metal pipe and a joint pipe joined by liquid phase diffusion bonding, and a method of production of the same, the liquid phase diffusion bonded pipe joint comprised of a metal joint provided with a tapered slanted part press-fit into an end of a metal pipe by a thrust in a pipe axial direction while expanding the metal pipe in inside diameter and tightly engaging with the end and a joining surface part continuing from the tapered slanted part and joined with an end face of the metal pipe by liquid phase diffusion bonding and a metal pipe tightly engaging with the tapered slanted part in the expanded state and with an end face joined with the joining surface part by liquid phase diffusion bonding.