Patents by Inventor Yuichiro Sasaki
Yuichiro Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080142931Abstract: An impurity region having a box-shaped impurity profile is formed. An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.Type: ApplicationFiled: March 17, 2005Publication date: June 19, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Ichiro Nakayama, Bunji Mizuno
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Publication number: 20080146009Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.Type: ApplicationFiled: February 4, 2005Publication date: June 19, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Tomohiro Okumura, Bunji Mizuno, Cheng-Guo Jin, Ichiro Nakayama, Satoshi Maeshima, Katsumi Okashita
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Publication number: 20080135980Abstract: An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.Type: ApplicationFiled: December 4, 2007Publication date: June 12, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Cheng-Guo Jin, Bunji Mizuno
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Publication number: 20080124900Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.Type: ApplicationFiled: January 15, 2008Publication date: May 29, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Bunji Mizuno, Cheng-Guo Jin
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Patent number: 7378031Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.Type: GrantFiled: February 23, 2004Date of Patent: May 27, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Bunji Mizuno, Yuichiro Sasaki, Ichiro Nakayama, Hisataka Kanada
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Patent number: 7365346Abstract: An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring device.Type: GrantFiled: December 29, 2004Date of Patent: April 29, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Bunji Mizuno
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Patent number: 7358511Abstract: A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.Type: GrantFiled: May 15, 2007Date of Patent: April 15, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Patent number: 7348264Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.Type: GrantFiled: April 30, 2007Date of Patent: March 25, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Publication number: 20080067439Abstract: A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.Type: ApplicationFiled: May 15, 2007Publication date: March 20, 2008Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Publication number: 20080061292Abstract: The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.Type: ApplicationFiled: May 19, 2005Publication date: March 13, 2008Inventors: Cheng-Guo Jin, Yuichiro Sasaki, Bunji Mizuno, Katsumi Okashita, Hiroyuki Ito, Tomohiro Okumura, Satoshi Maeshima, Ichiro Nakayama
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Publication number: 20080024126Abstract: The present invention provides a beam measuring device which can measure a beam current value with high accuracy in a non-destructive manner and, at the same time, can measure a position of a beam. A measuring device includes a magnetic shielding part for shielding an outer magnetic field, and a plurality of magnetic field sensors which are arranged in a shielding space which is formed by the magnetic shielding part, wherein the magnetic field sensor includes a plurality of magnetic field collection mechanisms which collect magnetic fields which the beam current to be measured generates, and the magnetic field collection mechanism is a cylindrical structural body which has at least a surface thereof formed of a superconductive body and includes a bridge portion which has only a portion thereof formed of a superconductive body on an outer peripheral portion thereof, and a magnetic field which the beam current to be measured generates is measured by the magnetic field sensors.Type: ApplicationFiled: February 10, 2005Publication date: January 31, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Tamaki Watanabe, Takeo Kawaguchi, Shinichi Watanabe, Takeshi Katayama, Bunji Mizuno, Hisataka Kanada
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Patent number: 7315140Abstract: Disclosed here is a cyclotron having a beam phase selector capable of controlling phase widths of beams and improving beam permeability for increasing beam current. The cyclotron contains an acceleration voltage applying section and a beam blocking section, at least any one of the two sections has a movable structure. While a particle is passing across a gap between dee electrodes, the acceleration voltage applying section applies RF acceleration voltage to the particle, and further applies RF acceleration voltage having a phase different from the phase of previously applied RF acceleration voltage. The beam blocking section blocks undesired particles. Preferably, the acceleration voltage applying section at least has an electrode having an opening in a direction of the core of the cyclotron. Also preferably, operations on phase-width control can be performed outside the cyclotron, with vacuum condition in the cyclotron maintained.Type: GrantFiled: January 27, 2005Date of Patent: January 1, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Kichiji Hatanaka
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Publication number: 20070254460Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.Type: ApplicationFiled: June 28, 2007Publication date: November 1, 2007Applicant: MATSUSHIDA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Bunji Mizuno, Cheng-Guo Jin
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Publication number: 20070228294Abstract: Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.Type: ApplicationFiled: May 24, 2005Publication date: October 4, 2007Inventors: Hiroyuki Ito, Noriyuki Sakudo, Yuichiro Sasaki, Bunji Mizuno
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Publication number: 20070212837Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.Type: ApplicationFiled: May 12, 2005Publication date: September 13, 2007Inventors: Bunji Mizuno, Yuichiro Sasaki, Ichiro Nakayama, Hiroyuki Ito, Tomohiro Okumura, Cheng-Guo Jin, Katsumi Okashita, Hisataka Kanada
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Publication number: 20070190759Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.Type: ApplicationFiled: April 30, 2007Publication date: August 16, 2007Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Publication number: 20070176124Abstract: Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of the invention, there is provided a plasma doping method that places a sample on a sample electrode in a vacuum chamber, generates plasma in the vacuum chamber, and causes impurity ions in the plasma to collide against a surface of the sample so as to form an impurity doped layer in the surface of the sample.Type: ApplicationFiled: March 30, 2007Publication date: August 2, 2007Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Publication number: 20070166846Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.Type: ApplicationFiled: December 29, 2006Publication date: July 19, 2007Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Publication number: 20070111548Abstract: Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of the invention, there is provided a plasma doping method that places a sample on a sample electrode in a vacuum chamber, generates plasma in the vacuum chamber, and causes impurity ions in the plasma to collide against a surface of the sample so as to form an impurity doped layer in the surface of the sample.Type: ApplicationFiled: December 29, 2006Publication date: May 17, 2007Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Tomohiro Okumura
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Patent number: 7201613Abstract: A pressure contact holding-type connector in accordance with the present invention is configured to be interposed between opposing electrodes. A conductive pin is located in at least one end portion of each through-hole of an insulating housing having a through-hole oriented in a thickness direction. A flange section provided on the conductive pin is mated with a small-diameter section provided in one end portion of the through-hole to maintain at least part of the conductive pin in a state of accommodation inside the through-hole. And, a conductive coil spring having one end thereof mated with the flange section provided on the conductive pin and pushing the conductive pin with a snap to an exterior of the through-hole is installed inside the through-hole. The conductive pin can be disposed at both ends of the coil spring.Type: GrantFiled: March 16, 2004Date of Patent: April 10, 2007Assignee: Shin-Etsu Polymer Co., Ltd.Inventor: Yuichiro Sasaki