Abstract: With evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.

Abstract: A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.

Abstract: Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.

Abstract: An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.

Abstract: In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode.

Abstract: With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

Abstract: A beam current measuring device (BMD) capable of measuring beam current while radiating the beam on a target, such as a semiconductor wafer. The BMD at least includes: (a) a detecting part operable to detect or collect a magnetic field corresponding to the beam current; and (b) a measuring part including (i) a SQUID sensitive to magnetic flux, and (ii) a feedback coil operable to carry feedback current wherein the feedback current is operable to cancel out a change in the magnetic flux penetrating through the SQUID. Wherein the operating point of the SQUID is set according to a finite beam current value, other than zero, which penetrates through the detecting part. A BMD of the present invention can be incorporated and used in an ion-implantation apparatus, an electron beam exposure apparatus, an accelerator, and the like.

Abstract: The invention provides a nondestructive measuring method and measuring apparatus that assures a high noise immunity and is capable of performing high-accuracy beam current measurements. The inventive beam current measuring apparatus includes a magnetism shielding part for shielding an external magnetic field and a magnetic field sensor arranged in the shielding space generated by said magnetism shielding part, said beam current measuring apparatus measuring, by using said magnetic field sensor, a magnetic field where a beam current to be measured is generated, characterized in that said magnetic field sensor has a magnetic flux/feedback current conversion coefficient of 8×10?15 Wb/A or above.

Abstract: A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.

Abstract: The pressure contact holding-type connector in accordance with the present invention is configured to be interposed between opposing electrodes; a conductive pin is located in at least one end portion of each through-hole of an insulating housing having a through-hole oriented in the thickness direction; a flange section provided at the conductive pin is mated with a small-diameter section provided in one end portion of the through-hole to maintain at least part of the conductive pin in a state of accommodation inside the through-hole; and a conductive coil spring having one end thereof mated with the flange section provided at the conductive pin and pushing the conductive pin with a snap to the outside of the through-hole is installed inside the through-hole. The conductive pin can be disposed at both ends of the coil spring.

Abstract: Disclosed here is a cyclotron having a beam phase selector capable of controlling phase widths of beams and improving beam permeability for increasing beam current. The cyclotron contains an acceleration voltage applying section and a beam blocking section, at least any one of the two sections has a movable structure. While a particle is passing across a gap between dee electrodes, the acceleration voltage applying section applies RF acceleration voltage to the particle, and further applies RF acceleration voltage having a phase different from the phase of previously applied RF acceleration voltage. The beam blocking section blocks undesired particles. Preferably, the acceleration voltage applying section at least has an electrode having an opening in a direction of the core of the cyclotron. Also preferably, operations on phase-width control can be performed outside the cyclotron, with vacuum condition in the cyclotron maintained.

Abstract: An ion-implanting apparatus and method that can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring means.

Abstract: A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film.

Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.

Abstract: A permanent magnet field small DC motor includes an arc-shaped rare earth magnet of maximum thickness 1 mm or less fabricated by compression molding from rare earth iron based melt-spun flakes and a binder. The magnet is provided with a certain specific portion at both ends in the circumferential direction, which has no back yoke when the magnet is press-fit in a soft-magnetic frame. The arc-shaped rare earth magnet fabricated by compression molding from a material containing more rare earth iron based melt-spun flakes exhibits simultaneous increase of both a remanence as a function of magnetizing field and a coercivity; and hence, exhibits a well-balanced demagnetization curve even in an unsaturated magnetized state.

Abstract: A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.

Abstract: A powder molded magnet manufactured by a method comprising the steps of: (1) forming a granular compound of diameter of not more than 250 ?m with a rare earth-iron rapid-quenched flake, which has not more than 150 ?m in diameter, being coarsely ground if necessary, and a binder, (2) dry-blending the granular compound with fatty acid metallic soap powder, (3) forming compressed powder from the granular compound dry-blended with the fatty acid metallic soap powder, by powder molding, and (4) heat-treating the compressed powder to a temperature higher than a thermally dissociating temperature of stabilized isocyanate.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

Abstract: A housing 20 integrally formed with a light guide 10 in which a liquid crystal module of a cellular phone is mounted, a multiple number of hollow, conductive toe-pins 28 which are inserted in respective passage holes 23 of the housing 20 and slidably come out from the undersurface of housing 20, and conductive head pins 30 which each are fitted into respective conductive toe-pins 28 and slidably come out from the top surface of housing 20, are provided. A coil spring 32 is interposed between each conductive toe-pin 28 and conductive head pin 30 and elastically urges the conductive toe-pin 28 and conductive head pin 30, so that they come out from both sides of housing 20.