Abstract: The invention provides a process for producing an optical semiconductor device, which comprises: (1) forming a resin layer on one or more optical semiconductor elements each mounted on a conductor; and (2) press-molding the resin layer formed in step (1).

Abstract: The invention provides an optical semiconductor device which comprises: an optical semiconductor element; a first resin layer encapsulating the optical semiconductor element and comprising a first resin and light-scattering particles; and one or more resin layers sequentially encapsulating the first resin layer and each comprising a resin having a lower refractive index than the first resin. In an embodiment where the optical semiconductor device has a plurality of resin layers over the first resin layer, the plurality of resin layers are disposed such that the refractive indexes of the constituting resins sequentially decrease toward the outermost resin layer.

Abstract: A porous adhesive sheet 1 having plural through holes 2 running in about parallel with each other in the thickness direction A of an adhesive organic film 3, wherein the through holes have about congruent sections in the diameter direction from one opening 2a to the other opening 2b and a production method thereof, and a semiconductor wafer with a porous adhesive sheet 31, which includes a semiconductor wafer 32 having an electrode 33, the porous adhesive sheet 1 adhered to the semiconductor wafer, and a conductive part 34 formed by filling a through hole 2 located on the electrode 33 with a conductive material, and a production method thereof are provided.

Abstract: A porous adhesive sheet 1 having plural through holes 2 running in about parallel with each other in the thickness direction A of an adhesive organic film 3, wherein the through holes have about congruent sections in the diameter direction from one opening 2a to the other opening 2b and a production method thereof, and a semiconductor wafer with a porous adhesive sheet 31, which includes a semiconductor wafer 32 having an electrode 33, the porous adhesive sheet 1 adhered to the semiconductor wafer, and a conductive part 34 formed by filling a through hole 2 located on the electrode 33 with a conductive material, and a production method thereof are provided.

Abstract: The present invention provides a thermosetting resin which has a tensile modulus after cure of from 0.001 to 1 GPa at 35° C. and which has a resin flow rate before cure under heat and pressure at 150° C. and 2.94×10?1 MPa of from 5 to 50%.

Abstract: An adhesive film for underfill which relaxes the stress formed in the wiring circuit substrate, semiconductor element and electrode parts for connection. The adhesive film is a quickly hardening type, and forms a highly heat resistant sealing resin layer quickly between the wiring circuit substrate and semiconductor element of a semiconductor device.

Abstract: An adhesive film for underfill excellent in relaxation effect of the stress generated in the above semiconductor element and the wiring circuit board and in the connecting electrode parts and also excellent in reliability of electrical connection between the semiconductor element and the wiring circuit board.

Abstract: A polycarbodiimide copolymer which comprises at least one structural unit selected from rubber residues represented by the following formulae (1) and (2) in a number “m”: 1

Abstract: A microlens array having a resin layer forming convex lenses, wherein the resin layer comprises a cured product of a polycarbodiimide resin represented by formula:

Abstract: A resin for the encapsulation of a photosemiconductor element which comprises a polycarbodiimide having a specific structure; a photosemiconductor device including a photosemiconductor element encapsulated with the resin; and a process for producing the photosemiconductor device which includes the steps of placing the resin on a photosemiconductor element and heating the resin. The resin enables the photosemiconductor element to maintain high brightness when it is a light-emitting element and to maintain high photodetection sensitivity when it is a photodetector, and also enables the photosemiconductor element to be easily encapsulated.

Abstract: A polycarbodiimide copolymer having a repeating structural unit represented by the following formula (1) in a number “m”: 1

Abstract: A semiconductor device which comprises a substrate and a semiconductor element mounted thereon through bumps by the so-called flip chip method, and in which the semiconductor element has been encapsulated more easily and with higher certainty. A semiconductor device comprising a substrate and a semiconductor element mounted thereon through bumps, wherein the semiconductor element has been encapsulated by coating the back and the edges of the semiconductor element with a thermosetting sheet material having tackiness. Preferably, the tackiness of the sheet material as measured at time of use is from 2 to 15 in terms of ball tack.

Abstract: A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (−55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.

Abstract: An adhesive film for underfill which relaxes the stress formed in the wiring circuit substrate, semiconductor element and electrode parts for connection. The adhesive film is a quickly hardening type, and forms a highly heat resistant sealing resin layer quickly between the wiring circuit substrate and semiconductor element of a semiconductor device.

Abstract: An anisotropic conductive film 1 comprising an insulating film 2 and plural conductive paths (3, 4), wherein the plural conductive paths are insulated from each other and penetrate the insulating film 2 in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path 3 capable of contact with an electrode 12 of a semiconductor element 11 and a circuit 14 of a circuit board 13 has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Abstract: As an anisotropic conductive film capable of firmly adhering to an electronic component and a circuit board and achieving good electrical continuity by thermal compression bonding at a low temperature at which the circuit board is not deteriorated, an anisotropic conductive film is provided, which has a plurality of conductive paths 2 insulated from each other and penetrating the film substrate 1A in the direction of the thickness of the film substrate, both ends 2a and 2b of each conductive path being exposed to the top and back faces of the film substrate, wherein the film substrate 1A is mainly composed of a polycarbodiimide copolymer having a structure represented by formula (I) below: R3—NCN&Brketopenst;&Parenopenst;R2—NCN&Parenclosest;nR2—A&Parenopenst;R1—O—CO—O&Parenclosest;mR1—A—R2&Brketclosest;x&Parenopenst;NCN—R2&Parenclosest;nNCN—R3  (I) wherein m represents an integer of 2-50; n represents an integer of 1-30; x represents an i

Abstract: A semiconductor device containing a circuit board, an anisotropic conductive film and a semiconductor element electrically connected to the circuit board via the anisotropic conductive film, wherein the anisotropic conductive film contains a film substrate made from an insulating resin and plural conductive paths insulated from each other, which paths are disposed in and through the film substrate in the thickness direction, and wherein a gap is formed between the surface on the circuit board side of the film substrate and the board surface of the circuit board. The connection part between the anisotropic conductive film and the circuit board, as well as the connection part between the anisotropic conductive film and the semiconductor element do not suffer from interface destruction even when the device is used in an environment associated with radical temperature changes. Thus, a semiconductor device having high connection reliability can be obtained.

Abstract: A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.

Abstract: The present invention provides a production method of an anisotropic conductive film, which method includes the steps of

Abstract: An anisotropic conductive film 2 is superimposed on a circuit face 1a of a semiconductor wafer 1, and sandwiched and depressurizably surrounded with a flexible film 3 and a rigid plate 4 (or two flexible films) in the laminating direction, followed by depressurization of the surrounded interior by pressurizing at least in the laminating direction and heating the laminate as is from the outside, thereby joining the semiconductor wafer and the anisotropic conductive film, to produce a semiconductor wafer with an anisotropic conductive film. By forming an inhibiting layer on the rear face of a semiconductor wafer, the inhibiting layer warps in the direction antagonizing an expansion-shrinkage force produced on the anisotropic conductive film, and the warping of the entirety can be inhibited.