Abstract: An organic electroluminescence device including: a cathode, an anode, and an organic layer disposed between the cathode and the anode, wherein the organic layer comprises an emitting layer and a first layer, the first layer is disposed between the cathode and the emitting layer, the emitting layer comprises one or both of a compound represented by the following formula (1A) and a compound represented by the following formula (1B), and the first layer comprises a compound represented by the following formula (BE1):

Abstract: A compound having a structure represented by the following formulas (a) and (b): wherein, in the formulas (a) and (b), a ring A, a ring B, a ring C and a ring D are independently a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 50 ring carbon atoms, or a substituted or unsubstituted heterocyclic ring having 5 to 50 ring atoms; two or more of the ring A, the ring B, the ring C and the ring D are a heterocyclic ring; and each of sites *a, *b, *c and *d in the formula (a) and the formula (b) represents a position of an atom, and the atoms located in the sites *a, *b,*c and *d form one substituted or unsubstituted and saturated or unsaturated six-membered ring including four atoms thereof.

Abstract: A delivery device includes: an indwelling device including a stent body that is self-expandable; and a delivery catheter configured to separably support the indwelling device. The delivery catheter includes: a cover configured to cover at least a part of an axial range of the stent body; and an expansion restraining mechanism including a plurality of restraining wire rods configured to restrain expansion of the stent body by hooking a stent wire rod that constitutes the stent body. The plurality of restraining wire rods are configured to release restraint of the stent body by moving axially.

Abstract: A cell sheet for transplantation into a living body, containing MSCs having an average cell density of 3.0×104 cells/cm2 or less on the surface of the sheet is provided. A method for producing a cell sheet for transplantation into a living body, including: a step of seeding MSCs on a cell culture carrier having a three-dimensional structure formed of fibers at a cell number of 3.0×105 cells/cm2 or less; and a step of culturing the MSCs and thereby preparing a cell sheet containing the MSCs having an average cell density of 3.0×104 cells/cm2 or less is also provided.

Abstract: A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

Abstract: A semiconductor device includes a chip that has a main surface, a main surface electrode that is arranged on the main surface, a terminal electrode that is arranged on the main surface electrode, a sealing insulator that covers a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and that includes a matrix resin and fillers added into the matrix resin such that a ratio of a total cross-sectional area with respect to a unit cross-sectional area is higher than a ratio of a cross-sectional area of the matrix resin with respect to the unit cross-sectional area.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer having a first main surface and a second main surface, a gate electrode embedded in a trench with a gate insulating layer, a source region of a first conductivity type formed in a side of the trench in a surface laver portion of the first main surface, a body region of a second conductivity type formed in a region at the second main surface side with respect to the source region in the surface layer portion of the first main surface, a drift region of the first conductivity type formed in a region at the second main surface side in the SiC semiconductor layer, and a contact region of the second conductivity type having an impurity concentration of not more than 1.0×1020 cm?3 and formed in the surface layer portion of the first main surface.

Abstract: A pickling apparatus for pickling a strip of metal being conveyed is equipped with: a pickling tank for storing an acid solution; a surrounding part disposed in the pickling tank so as to surround the strip immersed in the acid solution in the pickling tank; and an oxidant supply part for supplying a liquid oxidant toward an inside of the surrounding part.

Abstract: A semiconductor device includes a chip having a main surface, a recessed portion formed in the main surface, and a sealing insulator that covers the main surface, and that has an anker portion positioned in the recessed portion.

Abstract: A semiconductor device includes a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode that has a terminal surface and a terminal side wall, and that has a recessed portion recessed toward the main surface electrode side in the terminal surface, and a sealing insulator that covers a periphery of the terminal electrode on the main surface such as to expose the terminal surface and cover the terminal side wall.

Abstract: A semiconductor module includes a housing that has a housing space, a semiconductor device that is arranged in the housing space, and that has a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode arranged on the main surface electrode, and a sealing insulator covering a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and an insulating gel-like filling agent that is filled in the housing space such as to contact the sealing insulator, and that seals the semiconductor device in the housing space.

Abstract: A semiconductor device includes a chip that has a main surface, a main surface electrode that is arranged on the main surface, a terminal electrode that is arranged on the main surface electrode such as to expose a part of the main surface electrode; and a sealing insulator that covers a periphery of the terminal electrode such as to expose a part of the terminal electrode, and that has a portion directly covering the main surface electrode.

Abstract: An organic electroluminescence device includes a first emitting layer and a second emitting layer provided between an anode and a cathode, in which the first emitting layer contains, as a first host material, a first compound represented by a formula (1) below and having at least one group represented by a formula (11) below, and the second emitting layer contains a second host material.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

Abstract: A semiconductor device includes a chip that has a main surface, a main surface electrode that covers the main surface, pillar electrodes that are arranged on the main surface electrode at an interval, a sealing insulator that covers a region between the pillar electrodes on the main surface electrode such as to expose parts of the pillar electrodes, and at least one terminal film that covers at least one of the pillar electrodes on the sealing insulator.

Abstract: An electric pump includes a case, and a motor that includes a rotor and a stator and is surrounded by the case. The case includes an introduction pipe portion for introducing a fluid and a discharge pipe portion for discharging the fluid. The rotor is disposed in a space surrounded by the case and the stator and communicating with the introduction pipe portion and the discharge pipe portion. The rotor includes a first blade member, a second blade member, and a relay portion. An outer diameter of the relay portion is smaller than an outer diameter of at least one of the first and second blade members. The relay portion is positioned between the first blade member and the second blade member.

Abstract: A manufacturing method for a semiconductor device includes a step of preparing a wafer source that has a first main surface on one side and a second main surface on the other side, a step of forming a main surface electrode on the first main surface, a step of forming a terminal electrode on the main surface electrode, a step of forming a sealing insulator that covers a periphery of the terminal electrode on the first main surface such as to expose a part of the terminal electrode, and a step of cutting the wafer source in a horizontal direction along the first main surface from an intermediate portion of a thickness range of the wafer source, and separating the wafer source into a sealed wafer on the sealing insulator side and an unsealed wafer on the second surface side.

Abstract: A semiconductor package includes a die pad, a semiconductor device that is arranged on the die pad, and that has a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode arranged on the main surface electrode, and a sealing insulator including a first matrix resin and first fillers, and covering a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and a package body that includes a second matrix resin and second fillers, and that seals the die pad and the semiconductor device such as to cover the sealing insulator.

Abstract: A semiconductor device includes a chip having a main surface, a main surface electrode arranged on the main surface, and a terminal electrode that has a conductor layer covering the main surface electrode and a gap portion penetrating the conductor layer in a thickness direction as viewed in cross section, and that is fixed to a same potential as that of the main surface electrode.

Abstract: A manufacturing method for a semiconductor device includes a step of preparing a wafer structure that includes a wafer having a main surface, and a main surface electrode arranged on the main surface, a step of forming a terminal electrode on the main surface electrode, a step of preparing a mask member that has a frame portion demarcating an opening portion exposing an inner portion of the main surface and configuring to overlap a peripheral edge portion of the main surface, and arranging the mask member on the main surface such that the frame portion overlaps the peripheral edge portion of the main surface, a step of supplying a sealant including a liquid thermosetting resin into the opening portion such as to cover the terminal electrode and a step of forming a sealing insulator by thermally curing the sealant.