Abstract: An organic electroluminescence device including a cathode, an anode, and an emitting layer disposed between the cathode and the anode, wherein the emitting layer includes a compound represented by the following formula (1) and one or more compounds selected from the group consisting of compounds represented by each of formulas (11), (21), (31), (41), (51), (61), (71) and (81). In the formula (1), at least one of R1 to R8 is a deuterium atom, and Ar2 is a monovalent group represented by following formula (2), (3) or (4).

Abstract: An SiC semiconductor device includes an SiC semiconductor layer having a first main surface and a second main surface, a gate electrode embedded in a trench with a gate insulating layer, a source region of a first conductivity type formed in a side of the trench in a surface layer portion of the first main surface, a body region of a second conductivity type formed in a region at the second main surface side with respect to the source region in the surface layer portion of the first main surface, a drift region of the first conductivity type formed in a region at the second main surface side in the SiC semiconductor layer, and a contact region of the second conductivity type having an impurity concentration of not more than 1.0×1020 cm?3 and formed in the surface layer portion of the first main surface.

Abstract: A steering device comprises a tilt-telescopic mechanism to switch between its tilt-and-axial move allowed state and its prohibited state. The tilt-telescopic mechanism comprises a pair of side wall portions provided on both sides, in a vehicle width direction, of an upper column, a bolt penetrating the side wall portions and pressing the side wall portions against each other in an approaching direction, a lever, and a biasing portion arranged between each of the side wall portions and the upper column and operative to apply a pressing force to the upper column from the both sides, in the vehicle width direction, thereof. The biasing portion comprises a pair of upper-side pressing portions to press an upper portion of the upper column above its axial center from both sides and a pair of lower-side pressing portions to press a lower portion of that below its axial center from both sides.

Abstract: An organic electroluminescence device, comprising: a cathode; an anode; and an emitting layer disposed between the cathode and the anode, wherein the emitting layer includes a compound represented by the following formula (1) and a compound represented by the following formula (11), provided that at least one of Ar101 and Ar102 is a monovalent group represented by the following formula (12).

Abstract: A compound represented by the following formula (1), wherein in the formula (1), at least one of R1 to R8 is a group represented by the following formula (2).

Abstract: An SiC semiconductor device includes an SiC semiconductor layer of a first conductivity type having a main surface, a source trench formed in the main surface and having a side wall and a bottom wall, a source electrode embedded in the source trench and having a side wall contact portion in contact with a region of the side wall of the source trench at an opening side of the source trench, a body region of a second conductivity type formed in a region of a surface layer portion of the main surface along the source trench, and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in a surface layer portion of the body region.

Abstract: An organic electroluminescence device including: a cathode, an anode, and an organic layer disposed between the cathode and the anode, wherein the organic layer comprises an emitting layer and a first layer, the first layer is disposed between the cathode and the emitting layer, the emitting layer comprises one or both of a compound represented by the following formula (1A) and a compound represented by the following formula (1B), and the first layer comprises a compound represented by the following formula (BE1):

Abstract: A compound having a structure represented by the following formulas (a) and (b): wherein, in the formulas (a) and (b), a ring A, a ring B, a ring C and a ring D are independently a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 50 ring carbon atoms, or a substituted or unsubstituted heterocyclic ring having 5 to 50 ring atoms; two or more of the ring A, the ring B, the ring C and the ring D are a heterocyclic ring; and each of sites *a, *b, *c and *d in the formula (a) and the formula (b) represents a position of an atom, and the atoms located in the sites *a, *b,*c and *d form one substituted or unsubstituted and saturated or unsaturated six-membered ring including four atoms thereof.

Abstract: A delivery device includes: an indwelling device including a stent body that is self-expandable; and a delivery catheter configured to separably support the indwelling device. The delivery catheter includes: a cover configured to cover at least a part of an axial range of the stent body; and an expansion restraining mechanism including a plurality of restraining wire rods configured to restrain expansion of the stent body by hooking a stent wire rod that constitutes the stent body. The plurality of restraining wire rods are configured to release restraint of the stent body by moving axially.

Abstract: A cell sheet for transplantation into a living body, containing MSCs having an average cell density of 3.0×104 cells/cm2 or less on the surface of the sheet is provided. A method for producing a cell sheet for transplantation into a living body, including: a step of seeding MSCs on a cell culture carrier having a three-dimensional structure formed of fibers at a cell number of 3.0×105 cells/cm2 or less; and a step of culturing the MSCs and thereby preparing a cell sheet containing the MSCs having an average cell density of 3.0×104 cells/cm2 or less is also provided.

Abstract: A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

Abstract: A semiconductor device includes a chip that has a main surface, a main surface electrode that is arranged on the main surface, a terminal electrode that is arranged on the main surface electrode, a sealing insulator that covers a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and that includes a matrix resin and fillers added into the matrix resin such that a ratio of a total cross-sectional area with respect to a unit cross-sectional area is higher than a ratio of a cross-sectional area of the matrix resin with respect to the unit cross-sectional area.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer having a first main surface and a second main surface, a gate electrode embedded in a trench with a gate insulating layer, a source region of a first conductivity type formed in a side of the trench in a surface laver portion of the first main surface, a body region of a second conductivity type formed in a region at the second main surface side with respect to the source region in the surface layer portion of the first main surface, a drift region of the first conductivity type formed in a region at the second main surface side in the SiC semiconductor layer, and a contact region of the second conductivity type having an impurity concentration of not more than 1.0×1020 cm?3 and formed in the surface layer portion of the first main surface.

Abstract: A pickling apparatus for pickling a strip of metal being conveyed is equipped with: a pickling tank for storing an acid solution; a surrounding part disposed in the pickling tank so as to surround the strip immersed in the acid solution in the pickling tank; and an oxidant supply part for supplying a liquid oxidant toward an inside of the surrounding part.

Abstract: A semiconductor device includes a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode that has a terminal surface and a terminal side wall, and that has a recessed portion recessed toward the main surface electrode side in the terminal surface, and a sealing insulator that covers a periphery of the terminal electrode on the main surface such as to expose the terminal surface and cover the terminal side wall.

Abstract: A semiconductor device includes a chip having a main surface, a recessed portion formed in the main surface, and a sealing insulator that covers the main surface, and that has an anker portion positioned in the recessed portion.

Abstract: A semiconductor module includes a housing that has a housing space, a semiconductor device that is arranged in the housing space, and that has a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode arranged on the main surface electrode, and a sealing insulator covering a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and an insulating gel-like filling agent that is filled in the housing space such as to contact the sealing insulator, and that seals the semiconductor device in the housing space.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

Abstract: A semiconductor device includes a chip that has a main surface, a main surface electrode that is arranged on the main surface, a terminal electrode that is arranged on the main surface electrode such as to expose a part of the main surface electrode; and a sealing insulator that covers a periphery of the terminal electrode such as to expose a part of the terminal electrode, and that has a portion directly covering the main surface electrode.

Abstract: An organic electroluminescence device includes a first emitting layer and a second emitting layer provided between an anode and a cathode, in which the first emitting layer contains, as a first host material, a first compound represented by a formula (1) below and having at least one group represented by a formula (11) below, and the second emitting layer contains a second host material.