Abstract: A polishing head includes a first ring-shaped member having an opening; a plate-shaped member that closes the opening on an upper side of the first ring-shaped member; a membrane that closes the opening on a lower side of the first ring-shaped member; a back pad adhered to a lower surface of the membrane; and a second ring-shaped member located below the back pad and having an opening that holds a polishing target workpiece. A space formed by closing the opening of the first ring-shaped member by the plate-shaped member and the membrane includes: a central region; and an outer peripheral region partitioned from the central region by a partition, and an inner peripheral edge region of the second ring-shaped member is located vertically below an outer peripheral edge of the outer peripheral region. A polishing apparatus includes the polishing head, and is used in a method of manufacturing a semiconductor wafer.

Abstract: A compound having structures represented by the following formulas (1) or (2): wherein in the formulas (1) and (2), at least one of R1 to R8 is a deuterium atom.

Abstract: An organic electroluminescence device comprising: a cathode, an anode, and an organic layer disposed between the cathode and the anode, wherein the organic layer comprises an emitting layer and a first layer, the first layer is disposed between the cathode and the emitting layer, the emitting layer comprises a compound represented by the following formula (1), and the first layer comprises a compound represented by the following formula (BE1):

Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first surface electrode covering the diode region and the first conductivity type region on the first surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.

Abstract: An organic electroluminescence device including a cathode, an anode, and an emitting layer disposed between the cathode and the anode, wherein the emitting layer includes a compound represented by the following formula (1) and one or more compounds selected from the group consisting of compounds represented by each of formulas (11), (21), (31), (41), (51), (61), (71) and (81). In the formula (1), at least one of R1 to R8 is a deuterium atom.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

Abstract: A semiconductor device includes a semiconductor layer made of SiC. A transistor element having an impurity region is formed in a front surface portion of the semiconductor layer. A first contact wiring is formed on a back surface portion of the semiconductor layer, and defines one electrode electrically connected to the transistor element. The first contact wiring has a first wiring layer forming an ohmic contact with the semiconductor layer without a silicide contact and a second wiring layer formed on the first wiring layer and having a resistivity lower than that of the first wiring layer.

Abstract: An organic electroluminescence device comprising: a cathode, an anode, and at least one organic layer disposed between the cathode and the anode, wherein at least one layer of the at least one organic layer comprises a compound represented by the following formulas (1-1) and (1-3) or a compound represented by the following formulas (1-2) and (1-3).

Abstract: A compound having structures represented by the following formulas (1) or (2): wherein in the formulas (1) and (2), at least one of R1 to R8 is a deuterium atom.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

Abstract: A compound having structures represented by the following formulas (1) or (2): wherein in the formulas (1) and (2), at least one of R1 to R8 is a deuterium atom.

Abstract: A compound represented by a formula (1). In the formula (1): X1 to X4 are each independently a nitrogen atom or CRx; at least one of X1 to X4 is a nitrogen atom; a ring A, a ring B, and a ring C are each independently an aromatic hydrocarbon ring or a heterocycle; Ar1 is a hydrogen atom, an aryl group, or a group represented by a formula (2); and Ar2 is an aryl group or a group represented by a formula (3).

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer of a first conductivity type having a main surface, a source trench formed in the main surface and having a side wall and a bottom wall, a source electrode embedded in the source trench and having a side wall contact portion in contact with a region of the side wall of the source trench at an opening side of the source trench, a body region of a second conductivity type formed in a region of a surface layer portion of the main surface along the source trench, and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in a surface layer portion of the body region.

Abstract: An organic electroluminescence device including: a cathode, an anode, and an organic layer disposed between the cathode and the anode, wherein the organic layer comprises an emitting layer and a first layer, the first layer is disposed between the cathode and the emitting layer, the emitting layer comprises one or both of a compound represented by the following formula (1A) and a compound represented by the following formula (1B), and the first layer comprises a compound represented by the following formula (BE1):

Abstract: A compound having structures represented by the following formulas (1) or (2): wherein in the formulas (1) and (2), at least one of R1 to R8 is a deuterium atom.

Abstract: An SiC semiconductor device includes a chip that includes an SiC monocrystal and has a main surface, a trench structure that has a side wall and a bottom wall and is formed in the main surface, and a contact region of a first conductivity type that includes a first region formed in a region along the side wall in a surface layer portion of the main surface and a second region formed in a region along the bottom wall inside the chip and having an impurity concentration lower than an impurity concentration of the first region.

Abstract: A semiconductor device (1A) includes a chip (2) that includes an SiC monocrystal and has a main surface (3), a trench structure (20) that has a first side wall (22A) extending in an a-axis direction of the SiC monocrystal and a second side wall (22B) extending in an m-axis direction of the SiC monocrystal and is formed in the main surface, and a contact region (50) of a first conductivity type that is formed in a region inside the chip along the trench structure at an interval in the a-axis direction from the second side wall.

Abstract: An SiC semiconductor device comprises: a chip that includes an SiC monocrystal and has a main surface; a trench structure that has a first side wall extending in an a-axis direction of the SiC monocrystal and a second side wall extending in an m-axis direction of the SiC monocrystal and is formed in the main surface; and a contact region of a first conductivity type that is formed in a region inside the chip along the trench structure at an interval in the m-axis direction from the first side wall.

Abstract: A semiconductor device includes a chip having a main surface, a trench resistance structure formed in the main surface, a gate pad that has a resistance value lower than that of the trench resistance structure and that is arranged on the trench resistance structure so as to be electrically connected to the trench resistance structure, and a gate wiring line that has a resistance value lower than that of the trench resistance structure and that is arranged on the trench resistance structure so as to be electrically connected to the gate pad via the trench resistance structure.