Abstract: A compound represented by a formula (1) and having at least one deuterium atom is provided. In the formula (1), n is 1 to 4, L1 is a divalent group or a group represented by a formula (11) and R111 to R119 and R211 to R219 are each independently a hydrogen atom or a substituent, where the compound represented by the formula (1) does not include a group represented by —N(R906) (R907) and R906 and R907 are each independently a hydrogen atom, an alkyl group having 1 to 50 carbon atoms, or the like. In the formula (11), X13 is an oxygen atom or a sulfur atom, Y1 to Y8 are each independently CR300 or a nitrogen atom, and two of R300 are a single bond bonded with *a or other L1 and a single bond bonded with *b or other L1.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

Abstract: Specifically substituted benzofuro- and benzothienoquinolines and their use in electronic devices, especially electroluminescent devices. When used as charge transport material, charge blocker material and/or host material in electroluminescent devices, the specifically substituted benzofuro- and benzothienoquinolines may provide improved efficiency, stability, manufacturability, or spectral characteristics of electroluminescent devices and reduced driving voltage of electroluminescent devices.

Abstract: A SiC semiconductor device includes a SiC chip having a main surface, a trench gate structure formed at the main surface, a trench source structure formed at the main surface away from the trench gate structure in one direction, an insulating film covering the trench gate structure and the trench source structure above the main surface, a gate main surface electrode formed on the insulating film and a gate wiring that is led out from the gate main surface electrode onto the insulating film such as to cross the trench gate structure and the trench source structure in the one direction, and that is electrically connected to the trench gate structure through the insulating film, and that faces the trench source structure with the insulating film between the trench source structure and the gate wiring.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.

Abstract: A SiC semiconductor device includes a SiC chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a trench structure formed at the first surface such as to be exposed from the connecting surface, and a sidewall wiring that is formed on the second surface such as to cover the connecting surface and that is electrically connected to the trench structure.

Abstract: The semiconductor device of the present invention includes a semiconductor substrate, a switching element which is defined on the semiconductor substrate, and a temperature sense element which is provided on the surface of the semiconductor substrate independently from the switching element and characterized by being dependent on a temperature.

Abstract: A SiC semiconductor device includes SiC chip having main surface that includes first surface, second surface hollowed in thickness direction at first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a transistor structure formed at an inward portion of the first surface, the transistor structure including a trench gate structure that has a second depth less than the first depth and a trench source structure that has a third depth exceeding the second depth and that adjoins the trench gate structure in one direction, and a dummy structure formed at a peripheral edge portion of the first surface, the dummy structure including a plurality of dummy trench source structures which have the third depth and adjoin each other in the one direction.

Abstract: This organic electroluminescence element includes an anode, a cathode, and an organic layer disposed between the anode and the cathode. The organic layer includes a light-emitting layer and at least one layer disposed between the light-emitting layer and the anode. The light-emitting layer includes a compound represented by formula (1), and the at least one layer disposed between the light-emitting layer and the anode includes a compound represented by formula (2).

Abstract: An information processing apparatus includes: a memory configured to store information about mobile bodies, each of which forms a vehicle by being coupled with a main body unit and is capable of autonomous driving; and a processor configured to transmit a summon command to a first mobile body existing within a predetermined range, the summon command summoning the first mobile body to a predetermined assembly location, and cause a predetermined number of first mobile bodies assembled at the predetermined assembly location to carry one first main body unit that is larger or heavier than a main body unit that can be carried by one first mobile body, and to cause the predetermined number of first mobile bodies to move to a predetermined destination.

Abstract: A compound represented by the following formula (1), wherein at least one of Ra to Rd is a substituted or unsubstituted biphenyl-2-yl group; and at least one of Ra to Rd has a specific substituent.

Abstract: An information processing apparatus includes a controller configured to execute the processing of finding, in connection with a first vehicle whose cabin unit and travel unit are separable from each other and that is scheduled to travel a first section of road in which travelling with a travel unit of a first type is suitable and provided with a travel unit of a second type different from the first type, a second vehicle that is scheduled to travel the first section in the direction opposite to the direction of travel of the first vehicle and finish travelling the first section and provided with a travel unit of the first type, and instructing the first vehicle and the second vehicle to exchange the travel unit of the first type and the travel unit of the second type.

Abstract: A semiconductor device includes a semiconductor layer that has a main surface, a main surface electrode that is arranged at the main surface, an insulating film that partially covers the main surface electrode such as to expose a portion of the main surface electrode, a mold layer that covers the insulating film such as to expose the main surface electrode, and a pad electrode that is arranged on the main surface electrode such as to be electrically connected to the main surface electrode.

Abstract: An organic electroluminescence device (1) includes an anode (3), a cathode (4), and an emitting layer disposed between the anode (3) and the cathode (4). The emitting layer includes a first emitting layer (51) and a second emitting layer (52). The first emitting layer (51) contains, as a first host material, a first compound that has at least one group represented by a formula (11) below and that is represented by a formula (1) below, where at least one of R101 to R112 is a group represented by the formula (11).

Abstract: An organic electroluminescence device comprising: a cathode, an anode, and at least one organic layer disposed between the cathode and the anode, wherein at least one layer of the at least one organic layer comprises a compound represented by the following formulas (1-1) and (1-3) or a compound represented by the following formulas (1-2) and (1-3).

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

Abstract: An electronic component includes a covered object, an electrode that covers the covered object and has an electrode side wall on the covered object, an inorganic insulating film that has an inner covering portion covering the electrode such as to expose the electrode side wall, and an organic insulating film that covers the electrode side wall.

Abstract: A semiconductor device includes a semiconductor layer that has a first main surface at one side and a second main surface at another side, a first main surface electrode that includes a first electrode covering the first main surface and a second electrode having a higher hardness than the first electrode and covering the first electrode, and an oxide layer that covers the first main surface electrode.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.