Patents by Inventor Yukihisa Wada

Yukihisa Wada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200337659
    Abstract: In this X-ray phase imaging apparatus, at least one of a plurality of gratings is composed of a plurality of grating portions arranged along a third direction perpendicular to a first direction along which a subject or an imaging system is moved by a moving mechanism and a second direction along which an X-ray source, a detection unit, and a plurality of grating portions are arranged. The plurality of grating portions are arranged such that adjacent grating portions overlap each other when viewed in the first direction.
    Type: Application
    Filed: March 30, 2020
    Publication date: October 29, 2020
    Inventors: Satoshi SANO, Koichi TANABE, Yukihisa WADA, Satoshi TOKUDA, Akira HORIBA, Naoki MORIMOTO
  • Patent number: 10772592
    Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1) that radiates continuous X-rays, a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects the continuous X-rays, and a third grating (2) arranged between the detector (5) and the first grating 3. The first grating (3), the second grating (4), and the third grating (2) are arranged so as to satisfy conditions of predetermined formulas.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: September 15, 2020
    Assignees: Shimadzu Corporation, OSAKA UNIVERSITY
    Inventors: Satoshi Sano, Koichi Tanabe, Toshinori Yoshimuta, Kenji Kimura, Hiroyuki Kishihara, Yukihisa Wada, Takuro Izumi, Taro Shirai, Takahiro Doki, Akira Horiba, Takayoshi Shimura, Heiji Watanabe, Takuji Hosoi
  • Patent number: 10729398
    Abstract: An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit 3b, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: August 4, 2020
    Assignees: Shimadzu Corporation, Osaka University
    Inventors: Satoshi Sano, Koichi Tanabe, Toshinori Yoshimuta, Kenji Kimura, Hiroyuki Kishihara, Yukihisa Wada, Takuro Izumi, Taro Shirai, Takahiro Doki, Akira Horiba, Takayoshi Shimura, Heiji Watanabe, Takuji Hosoi
  • Publication number: 20200211856
    Abstract: A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.
    Type: Application
    Filed: December 23, 2019
    Publication date: July 2, 2020
    Inventors: Yukihisa WADA, Mai SUGAWARA, Takuya OHHASHI
  • Publication number: 20200190672
    Abstract: A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.
    Type: Application
    Filed: December 9, 2019
    Publication date: June 18, 2020
    Inventors: Takuya OHHASHI, Mai SUGAWARA, Yukihisa WADA
  • Publication number: 20200158662
    Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1), a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects X-rays, an adjustment mechanism (6), and a controller (7) that controls the adjustment mechanism (6) to adjust a misalignment of the first grating (3) or a misalignment of the second grating (4) based on Moire fringes detected by the detector (5).
    Type: Application
    Filed: July 10, 2017
    Publication date: May 21, 2020
    Inventors: Akira HORIBA, Koichi TANABE, Toshinori YOSHIMUTA, Kenji KIMURA, Hiroyuki KISHIHARA, Yukihisa WADA, Takuro IZUMI, Taro SHIRAI, Takahiro DOKI, Satoshi SANO, Takayoshi SHIMURA, Heiji WATANABE, Takuji HOSOI
  • Patent number: 10643760
    Abstract: The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: May 5, 2020
    Assignee: Shimadzu Corporation
    Inventors: Takahiro Doki, Yukihisa Wada, Satoshi Tokuda, Nobukazu Hayashi, Toshinori Yoshimuta
  • Publication number: 20190343472
    Abstract: An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit 3b, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.
    Type: Application
    Filed: July 28, 2017
    Publication date: November 14, 2019
    Inventors: Satoshi SANO, Koichi TANABE, Toshinori YOSHIMUTA, Kenji KIMURA, Hiroyuki KISHIHARA, Yukihisa WADA, Takuro IZUMI, Taro SHIRAI, Takahiro DOKI, Akira HORIBA, Takayoshi SHIMURA, Heiji WATANABE, Takuji HOSOI
  • Patent number: 10468365
    Abstract: In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: November 5, 2019
    Assignees: SHIMADZU CORPORATION, TOHOKU-MICROTEC CO., LTD.
    Inventors: Hiroyuki Kishihara, Toshinori Yoshimuta, Satoshi Tokuda, Yukihisa Wada, Makoto Motoyoshi
  • Publication number: 20190175126
    Abstract: Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase grating 5 provided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase grating 5 is observed in a moire pattern of a long period.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 13, 2019
    Inventors: Koichi TANABE, Toshinori YOSHIMUTA, Kenji KIMURA, Hiroyuki KISHIHARA, Yukihisa WADA, Takuro IZUMI, Taro SHIRAI, Takahiro DOKI, Satoshi SANO, Akira HORIBA
  • Publication number: 20190167219
    Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1) that radiates continuous X-rays, a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects the continuous X-rays, and a third grating (2) arranged between the detector (5) and the first grating 3. The first grating (3), the second grating (4), and the third grating (2) are arranged so as to satisfy conditions of predetermined formulas.
    Type: Application
    Filed: July 10, 2017
    Publication date: June 6, 2019
    Inventors: Satoshi SANO, Koichi TANABE, Toshinori YOSHIMUTA, Kenji KIMURA, Hiroyuki KISHIHARA, Yukihisa WADA, Takuro IZUMI, Taro SHIRAI, Takahiro DOKI, Akira HORIBA, Takayoshi SHIMURA, Heiji WATANABE, Takuji HOSOI
  • Patent number: 10254417
    Abstract: In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: April 9, 2019
    Assignee: Shimadzu Corporation
    Inventors: Satoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Yukihisa Wada
  • Publication number: 20180329081
    Abstract: In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.
    Type: Application
    Filed: November 19, 2015
    Publication date: November 15, 2018
    Applicant: Shimadzu Corporation
    Inventors: Satoshi TOKUDA, Toshinori YOSHIMUTA, Hiroyuki KISHIHARA, Yukihisa WADA
  • Publication number: 20180331060
    Abstract: In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes.
    Type: Application
    Filed: November 12, 2015
    Publication date: November 15, 2018
    Inventors: Hiroyuki KISHIHARA, Toshinori YOSHIMUTA, Satoshi TOKUDA, Yukihisa WADA, Makoto MOTOYOSHI
  • Publication number: 20180226167
    Abstract: The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.
    Type: Application
    Filed: February 7, 2018
    Publication date: August 9, 2018
    Inventors: Takahiro DOKI, Yukihisa WADA, Satoshi TOKUDA, Nobukazu HAYASHI, Toshinori YOSHIMUTA
  • Patent number: 9341566
    Abstract: To obtain a resin type identification method and a resin type identification apparatus with which an optimum infrared reflection spectrum for identifying a resin piece can be selected and accurate identification processing can be performed successively on individual resin pieces even when the resin pieces are identified using a single optical detector, at least one identifying signal power is selected by executing signal processing on the basis of signal powers corresponding to infrared reflection intensities obtained by emitting infrared light onto the resin piece, and the resin type of the resin piece is identified on the basis of an infrared reflection spectrum corresponding to the selected identifying signal power.
    Type: Grant
    Filed: January 16, 2014
    Date of Patent: May 17, 2016
    Assignees: Mitsubishi Electric Corporation, Shimadzu Corporation
    Inventors: Masaru Kinugawa, Muneaki Mukuda, Sonoko Umemura, Yasuyuki Nakagawa, Naoji Moriya, Toru Yamaguchi, Yukihisa Wada
  • Publication number: 20140203177
    Abstract: To obtain a resin type identification method and a resin type identification apparatus with which an optimum infrared reflection spectrum for identifying a resin piece can be selected and accurate identification processing can be performed successively on individual resin pieces even when the resin pieces are identified using a single optical detector, at least one identifying signal power is selected by executing signal processing on the basis of signal powers corresponding to infrared reflection intensities obtained by emitting infrared light onto the resin piece, and the resin type of the resin piece is identified on the basis of an infrared reflection spectrum corresponding to the selected identifying signal power.
    Type: Application
    Filed: January 16, 2014
    Publication date: July 24, 2014
    Applicants: Shimadzu Corporation, Mitsubishi Electric Corporation
    Inventors: Masaru Kinugawa, Muneaki Mukuda, Sonoko Umemura, Yasuyuki Nakagawa, Naoji Moriya, Toru Yamaguchi, Yukihisa Wada
  • Publication number: 20140063494
    Abstract: In a flow cell, where a light introducing member for introducing light for measurement into a linear capillary through which sample liquid flows is attached to one end of the capillary, and a light leading out member for leading light transmitted through the capillary while transmitting through the sample liquid flowing through the capillary out to the outside is attached to the other end, the light introducing member is a light waveguide inserted into the capillary, and the light leading out member is a window member attached to an opening at the other end of the capillary so the loss of the amount of light transmitted through the capillary can be suppressed, while it is possible for flow cells of which the optical path has a different length to be attached without causing a problem relating to the positional relationships in the optical system, such as an absorbance detector.
    Type: Application
    Filed: June 20, 2013
    Publication date: March 6, 2014
    Inventors: Takahide HATAHORI, Naoji MORIYA, Yukihisa WADA, Yuji NAKAMA
  • Patent number: 8313628
    Abstract: A distribution of AC electric field regularly arranged in a cell is formed while storing a sample having particles dispersed in a medium in the cell, whereby the particles are dielectrically migrated in the medium to generate a diffraction grating by density distribution of the particles. Diffracted light generated by irradiating the diffraction grating by density distribution with measuring light is detected, and evaluation of dielectrophoretic intensities of the particles and/or the medium is performed from the detection result. According to this method, evaluation of dielectrophoretic characteristics can be performed without adhering a phosphor to particles, and since even a particle small in size can achieve a detection level by collecting a number of such particles to form a diffraction grating, dielectric characteristics of microparticles of several nanometers in diameter can be thus quantitatively measured with high sensitivity.
    Type: Grant
    Filed: July 19, 2006
    Date of Patent: November 20, 2012
    Assignee: Shimadzu Corporation
    Inventors: Yoshio Tsunazawa, Yukihisa Wada, Naoji Moriya, Kenji Takubo, Shinichiro Totoki, Haruo Shimaoka
  • Patent number: 8274654
    Abstract: A dielectric sheet 3 is arranged between a pair of electrodes 2a and 2b for forming an electric field in a cell 1 that stores therein a sample having particles dispersed movably in a medium, the dielectric sheet 3 being formed to include multiple mutually parallel slits 3a to form a diffraction grating, and a parallel light flux is applied to the diffraction grating to generate diffracted light. A gradient electric field in the vicinity of the slits 3a generated by applying a voltage between the electrodes 2a and 2b causes the particles P to migrate in such a manner as to cover the slits 3a or away from the slits 3a and thereby the contrast of the diffraction grating to vary, and whereby the diffusion coefficient and/or size of the particles P can be calculated from the temporal change of the diffracted light when the particles diffuse freely after stopping the application of the voltage.
    Type: Grant
    Filed: June 13, 2007
    Date of Patent: September 25, 2012
    Assignee: Shimadzu Corporation
    Inventor: Yukihisa Wada