Abstract: A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

Abstract: A rinsing solution for rinsing a substrate with a protrusion portion, including an organic solvent (S1) that contains no hydroxyl group or fluorine atom and that has a dynamic viscosity of equal to or smaller than 1.05×106 m2/s. A method of treating a substrate with a protrusion portion, including a step (A) of bringing the rinsing solution into contact with a surface of the substrate with the protrusion portion, the protrusion portion being formed on the surface; and a step (B) of removing the rinsing solution from the surface on which the protrusion portion is formed.

Abstract: A cleaning liquid for cleaning a substrate having a first metal atom-containing layer that contains ruthenium and a second metal atom-containing layer that contains a metal atom other than ruthenium, both of the layers contacting each other, and at least one of the first metal atom-containing layer and the second metal atom-containing layer is exposed on a surface. The cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, and at least one amine other than the hydrazine compound and a quaternary hydroxide.

Abstract: A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water.

Abstract: A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Abstract: An etching solution for selectively performing an etching process on a compound represented by General Formula Si1-xGex, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Abstract: A chemical solution used for cleaning or etching a ruthenium-containing layer, which can obtain the ruthenium-containing layer having a reduced surface roughness while maintaining a good etching rate against the ruthenium, and a method for fabricating ruthenium wiring. The chemical solution includes orthoperiodic acid, a base component, and any one of a nitrogen-containing heterocyclic compound, an organic phosphonic acid, and an organic carboxylic acid.

Abstract: A method for producing a semiconductor element and a chemical solution to be used in the method for producing a semiconductor element, the method including dry-etching or chemically-mechanically polishing a ruthenium-containing layer located as an uppermost layer of a substrate; and bringing a surface of the substrate into contact with a chemical solution thereby satisfactorily cleaning and removing a ruthenium residue formed on the surface of the substrate; and a chemical solution to be suitably used in the method for producing a semiconductor element.

Abstract: A method for producing an aqueous solution of purified orthoperiodic acid with a reduced Cr content; a method for producing a semiconductor device that includes etching a Ru layer on a semiconductor substrate with an etchant obtained by the method; and an aqueous solution of orthoperiodic acid with a reduced Cr content. The method includes bringing an aqueous solution of crude orthoperiodic acid into contact with a metal removing agent including a chelating resin, the aqueous solution of crude orthoperiodic acid containing orthoperiodic acid and water and having an orthoperiodic acid content of 15% by mass or less and a Cr content of 1 ppb by mass or more based on the total mass of the aqueous solution of crude orthoperiodic acid.

Abstract: The X-ray imaging device (100) is provided with an X-ray source (1), a plurality of gratings, a moving mechanism (8), and an image processing unit (6). The image processing unit (6) is configured to generate a phase-contrast image (16) by associating a pixel value in each pixel of a subject (T) in a plurality of subject images (10) with phase values of a Moire fringe (30) at each pixel and aligning the pixel of the subject of the same position in the plurality of subject images.

Abstract: In this X-ray phase imaging apparatus, at least one of a plurality of gratings is composed of a plurality of grating portions arranged along a third direction perpendicular to a first direction along which a subject or an imaging system is moved by a moving mechanism and a second direction along which an X-ray source, a detection unit, and a plurality of grating portions are arranged. The plurality of grating portions are arranged such that adjacent grating portions overlap each other when viewed in the first direction.

Abstract: The X-ray imaging device (100) is provided with an imaging system (CS) including an X-ray source (1), a detector (5), and a plurality of gratings, a moving mechanism (8), a position information acquisition unit (7a), and an image processing unit (6) for generating a phase-contrast image (16) in a tomographic plane by acquiring a phase distribution in a tomographic plane (40) based on a plurality of X-ray images (10) and the acquired tomographic position (z+jd).

Abstract: This X-ray phase imaging system (100) includes an X-ray source (1), a detector (2), a first grating group (3), a second grating group (4), a moving mechanism (5), and an image processing unit (6). The moving mechanism is configured to relatively move a subject (T) and the imaging system (9) such that the subject (T) passes through a first grating region (R1) and a second grating region (R2). The image processing unit is configured to generate a first phase-contrast image (14a) and a second phase-contrast image (14b).

Abstract: A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Abstract: This X-ray phase imaging system (100) includes an X-ray source (1), a detector (2), a first grating group (3), a second grating group (4), a moving mechanism (5), and an image processing unit (6). The moving mechanism is configured to relatively move a subject (T) and the imaging system (9) such that the subject (T) passes through a first grating region (R1) and a second grating region (R2). The image processing unit is configured to generate a first phase-contrast image (14a) and a second phase-contrast image (14b).

Abstract: An X-ray phase imaging method includes a step of correcting a gradation that occurred along an orthogonal direction to a translation direction as viewed from an optical axis direction of X-rays in a phase-contrast image based on a distribution state of the gradation.

Abstract: In an X-ray imaging apparatus an image processor is configured to generate a phase contrast image based on a plurality of first images acquired by a first detection region (R1) at a plurality of relative positions of the first detection region with respect to a subject (T) to be imaged, and to generate an absorption image based on a plurality of second images acquired by a second detection region (R2) at a plurality of relative positions of the second detection region with respect to the subject.

Abstract: A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Abstract: An etching solution for selectively performing an etching process on a compound represented by General Formula Si1-xGex, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Abstract: The X-ray imaging device (100) is provided with an X-ray source (1), a plurality of gratings, a moving mechanism (8), and an image processing unit (6). The image processing unit (6) is configured to generate a phase-contrast image (16) by associating a pixel value in each pixel of a subject (T) in a plurality of subject images (10) with phase values of a Moire fringe (30) at each pixel and aligning the pixel of the subject of the same position in the plurality of subject images.