Abstract: An X-ray phase imaging method includes a step of correcting a gradation that occurred along an orthogonal direction to a translation direction as viewed from an optical axis direction of X-rays in a phase-contrast image based on a distribution state of the gradation.

Abstract: A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

Abstract: The X-ray imaging device (100) is provided with an imaging system (CS) including an X-ray source (1), a detector (5), and a plurality of gratings, a moving mechanism (8), a position information acquisition unit (7a), and an image processing unit (6) for generating a phase-contrast image (16) in a tomographic plane by acquiring a phase distribution in a tomographic plane (40) based on a plurality of X-ray images (10) and the acquired tomographic position (z+jd).

Abstract: In an X-ray imaging apparatus an image processor is configured to generate a phase contrast image based on a plurality of first images acquired by a first detection region (R1) at a plurality of relative positions of the first detection region with respect to a subject (T) to be imaged, and to generate an absorption image based on a plurality of second images acquired by a second detection region (R2) at a plurality of relative positions of the second detection region with respect to the subject.

Abstract: Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase grating 5 provided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase grating 5 is observed in a moire pattern of a long period.

Abstract: In this X-ray phase imaging apparatus, at least one of a plurality of gratings is composed of a plurality of grating portions arranged along a third direction perpendicular to a first direction along which a subject or an imaging system is moved by a moving mechanism and a second direction along which an X-ray source, a detection unit, and a plurality of grating portions are arranged. The plurality of grating portions are arranged such that adjacent grating portions overlap each other when viewed in the first direction.

Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1) that radiates continuous X-rays, a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects the continuous X-rays, and a third grating (2) arranged between the detector (5) and the first grating 3. The first grating (3), the second grating (4), and the third grating (2) are arranged so as to satisfy conditions of predetermined formulas.

Abstract: An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit 3b, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.

Abstract: A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Abstract: A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.

Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1), a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects X-rays, an adjustment mechanism (6), and a controller (7) that controls the adjustment mechanism (6) to adjust a misalignment of the first grating (3) or a misalignment of the second grating (4) based on Moire fringes detected by the detector (5).

Abstract: The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.

Abstract: An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit 3b, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.

Abstract: In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes.

Abstract: Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase grating 5 provided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase grating 5 is observed in a moire pattern of a long period.

Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1) that radiates continuous X-rays, a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects the continuous X-rays, and a third grating (2) arranged between the detector (5) and the first grating 3. The first grating (3), the second grating (4), and the third grating (2) are arranged so as to satisfy conditions of predetermined formulas.

Abstract: In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.

Abstract: In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.

Abstract: In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes.

Abstract: The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.