Abstract: A honeycomb structure 1 has a large number of through-holes 3 divided by partition walls 2 and extending in the axial direction, characterized in that the honeycomb structure contains a Si phase having a lattice constant controlled at 0.54302 to 0.54311 nm at room temperature. A process for producing the honeycomb structure 1, includes a firing step of firing a precursor of honeycomb structure, wherein the precursor contains a Si phase and the firing step is conducted using a furnace material free from any boron-containing compound. A process for producing the honeycomb structure 1, includes a firing step of firing a precursor of honeycomb structure, wherein a reduction percentage of Si content in Si phase after firing step relative to Si content in Si phase before firing step is suppressed at 10% by mass or less. Having an improved thermal conductivity, the honeycomb structure is superior in thermal shock resistance.

Abstract: The present invention provides a honeycomb structure 1 obtained by bonding, into one piece, a plurality of honeycomb segments 12 each having numbers of through-holes 3 surrounded by partition walls 2 and extending in the axial direction, characterized in that a spacer 10 is interposed between the honeycomb segments 12; and a process for producing a honeycomb structure 1, comprising; a step of producing a honeycomb segment 12, and a step of bonding a plurality of such honeycomb segments 12 into one piece, characterized in that, in the step of bonding the honeycomb segments 12 into one piece, a spacer 10 is interposed between adhesive surfaces 7. According to the present process, a honeycomb structure low in dimensional inaccuracy can be produced by allowing the adhesive layer present between honeycomb segments to have an intended thickness and further a uniform thickness.

Abstract: An electronic device having a component containing a refractory metal such as tungsten is cleaned by using a cleaning solution composed of an acidic solution which does not substantially contain aqueous hydrogen peroxide or an alkaline solution which does not substantially contain aqueous hydrogen peroxide.

Abstract: On the sides of a gate electrode, layered-film sidewalls are formed which includes a first oxide film such as an NSG film or a TEOS film and a second oxide film such as a BPSG film or a PSG film. After the layered-film sidewalls are used as a mask for forming source and drain regions of a MIS transistor, the second oxide film of the sidewalls is selectively removed. At the removal, wet etching is performed with an aqueous solution containing hydrofluoric acid, and acetic acid or isopropyl alcohol. This makes etching selectivity between oxide films higher and removes only the upper second oxide film. As a result, in the formation of two types of oxide films which differ in their etching properties, the etching selectivity can be prevented from deteriorating.

Abstract: There is here disclosed a method for manufacturing a porous ceramic structure which can produce a high porosity ceramic structure as well as a low porosity ceramic structure without causing cracks at the time of firing.

Abstract: A sidewall of a CVD oxide film is formed on a side face of a gate electrode formed on a semiconductor substrate. Then, with the sidewall exposed, the semiconductor substrate is cleaned such that the CVD oxide film has an etch selectivity of 5 or less with respect to a thermal oxide film.

Abstract: There are provided a porous honeycomb structure body capable of satisfying a pressure loss and isostatic strength which are mutually contradictory properties simultaneously and a method for manufacturing the same. In a porous honeycomb structure body having partition walls which contain cordierite as a primary crystal phase and have a porosity of 40 to 75% and an average pore diameter of 10 to 50 &mgr;m, porosity and an average pore diameter in a center portion of the structure body are made larger than porosity and an average pore diameter in a peripheral portion of the structure body.

Abstract: There is provided a method for fabricating a semiconductor device involving the formation of two or more oxide films having different etching properties. A multilayer-film sidewall including a first oxide film such as an NSG film, a TEOS film, or a HTO film and a second oxide film such as a BPSG film or a PSG film is formed over the side surfaces of a gate electrode. After the multilayer-film sidewall is used as an implantation mask for forming the source and drain of a MIS transistor, wet etching is performed by using an aqueous solution mixture containing a hydrofluoric acid and an inorganic acid (a hydrochloric acid, a sulfuric acid, or the like) in selectively removing the second oxide film. This increases the etching selectivity between the individual oxide films and allows the removal of only the upper-layer second oxide film.

Abstract: On the sides of a gate electrode, layered-film sidewalls are formed which includes a first oxide film such as an NSG film or a TEOS film and a second oxide film such as a BPSG film or a PSG film. After the layered-film sidewalls are used as a mask for forming source and drain regions of a MIS transistor, the second oxide film of the sidewalls is selectively removed. At the removal, wet etching is performed with an aqueous solution containing hydrofluoric acid, and acetic acid or isopropyl alcohol. This makes etching selectivity between oxide films higher and removes only the upper second oxide film. As a result, in the formation of two types of oxide films which differ in their etching properties, the etching selectivity can be prevented from deteriorating.

Abstract: A compound of the formula (I): ##STR1## wherein X.sup.1 is a group of one of the following formulae (1), (2) and (3): ##STR2## R.sup.1 is a branched long chain alkyl group, R.sup.2 is --CONHR.sup.3, a carboxyl group or a hydrogen atom, n is an integer of 0, 1 or 2, and R.sup.3 is a lower alkyl group or a phenyl group, or a pharmaceutically acceptable salt thereof, which is useful as a selectin inhibitor, and can be used in the prophylaxis or treatment of various inflammatory diseases such as inflammatory dermatitis (e.g., atopic dermatitis, contact hypersensitivity, photodermatosis, etc.), autoimmune chronic diseases (e.g. rheumatoid arthritis, chronic thyroiditis, etc.), and ischemia-reperfusion injury.

Abstract: A process for producing a ceramic structural body, including the steps of formulating a ceramic body by incorporating 0.2 to 3 wt % of emulsified wax and 2 to 7 wt % of methyl cellulose and plasticizing the resulting mixture for extrusion, and extruding the ceramic body.

Abstract: A process for producing a ceramic honeycomb structural body, comprises the steps of placing a green ceramic honeycomb structural body on a ceramic plate, and then firing the green ceramic honeycomb structural body. The green ceramic honeycomb structural body is placed on the ceramic plate in the state that a cell-opened end face contacts the ceramic plate. The ceramic plate is composed mainly of heat-resistive inorganic fibers, and has a bulk density of not less than 1.00 g/cm.sup.3.

Abstract: A drying carrier adapted for carrying honeycomb structures includes a plurality of perforated plates spaced to each other in the longitudinal direction of the drying carrier and made of a material having a conductivity higher than that of the drying carrier. Each of said perforated plates is provided with a convex portion having an upper contacting surface to be contacted with the bottom surface of the honeycomb structure to be carried. The surface area (A) of the upper contacting surface of the convex portion is smaller than the bottom surface area of the honeycomb structure.

Abstract: A ceramic honeycomb structural body-firing process includes the steps of: formulating a raw material from talc, kaolin and other cordierite-forming materials to give cordierite having a chemical composition of SiO.sub.2 : 42-56% by weight, Al.sub.2 O.sub.3 : 30-45% by weight and MgO: 12-16% by weight as a main component and a crystalline phase mainly composed of cordierite, shaping a honeycomb structural body from the resulting mixture by extrusion, and firing the honeycomb structural body. In the firing step, a heating rate in a temperature range in which the honeycomb structural body is thermally shrunk is set at not less than 20.degree. C./hr but not more than 60.degree. C./hr, the heating rate in a temperature range in which the solid phase reaction of the honeycomb structure body proceeds is set at not less than 80.degree. C./hr but not more than 130.degree. C.

Abstract: An excellent method of firing ceramic materials is provided wherein bending or deformation of a supporting plate which supports a green shaped body of the ceramic materials, deformation of the green shaped body caused by its own weight, and cracks and breakage of fired shaped body, during the firing of the shaped body of the ceramic materials, are eliminated. The method comprises mounting a green supporting plate on a fired supporting plate, mounting a green structural body of ceramic raw materials on the green supporting plate, and firing the green structural body on the green supporting plate.