Abstract: A solid-state imaging device includes a pixel array unit, a row control unit, a row readout unit, a column control unit, and a column readout unit. The pixel array unit includes MN pixels each including a photodiode for generating charges by receiving light and arrayed two-dimensionally in M rows and N columns. The pixel inputs an m-th row control signal output from the row control unit to an m-th row control line, inputs an n-th column control signal output from the column control unit to an n-th column control line, and selects whether the charges generated in the photodiode are output to an m-th row output line or an n-th column output line based on a logical value of each of the m-th row control signal and the n-th column control signal.

Abstract: A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.

Abstract: A plurality of pixels are arranged two-dimensionally in a matrix and individually include a first photosensitive portion and a second photosensitive portion. A plurality of first wirings connect a plurality of first photosensitive portions to each other for every row. A plurality of second wirings connect a plurality of second photosensitive portions to each other for every column. A first reading unit 21 is arranged to read signal data through at least some of the plurality of first wirings. A second reading unit 31 is arranged to read signal data through at least some of the plurality of second wirings. The first reading unit 21 has a reading pixel setting unit 26 arranged to set, based on signal data read in the first frame, a pixel group for reading signal data in a second frame subsequent to a first frame from the plurality of pixels.

Abstract: A plurality of pixels are arranged two-dimensionally in a matrix and individually include a first photosensitive portion and a second photosensitive portion. A plurality of first wirings connect a plurality of first photosensitive portions to each other for every row. A plurality of second wirings connect a plurality of second photosensitive portions to each other for every column. A first reading unit 21 is arranged to read signal data through at least some of the plurality of first wirings. A second reading unit 31 is arranged to read signal data through at least some of the plurality of second wirings. The first reading unit 21 has a reading pixel setting unit 26 arranged to set, based on signal data read in the first frame, a pixel group for reading signal data in a second frame subsequent to a first frame from the plurality of pixels.

Abstract: A plurality of pixels are arranged two-dimensionally in a matrix and individually include a first photosensitive portion and a second photosensitive portion. A plurality of first wirings connect a plurality of first photosensitive portions to each other for every row. A plurality of second wirings connect a plurality of second photosensitive portions to each other for every column. A first reading unit is arranged to read signal data through at least some of the plurality of first wirings. A second reading unit is arranged to read signal data through at least some of the plurality of second wirings. The first reading unit has a reading pixel setting unit arranged to set, based on signal data read in the first frame, a pixel group for reading signal data in a second frame subsequent to a first frame from the plurality of pixels.

Abstract: A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.

Abstract: A plurality of pixels are arranged two-dimensionally in a matrix and individually include a first photosensitive portion and a second photosensitive portion. A plurality of first wirings connect a plurality of first photosensitive portions to each other for every row. A plurality of second wirings connect a plurality of second photosensitive portions to each other for every column. A first reading unit is arranged to read signal data through at least some of the plurality of first wirings. A second reading unit is arranged to read signal data through at least some of the plurality of second wirings. The first reading unit has a reading pixel setting unit arranged to set, based on signal data read in the first frame, a pixel group for reading signal data in a second frame subsequent to a first frame from the plurality of pixels.

Abstract: A solid-state imaging device includes a photodetecting unit, a row control unit, a column control unit, and a signal readout unit. The photodetecting unit includes M×N pixel units P(1,1) to P(M,N) two-dimensionally arrayed in M rows and N columns. Each pixel unit P(m,n) includes a photodiode PD, an amplifying transistor Tr1, a transfer transistor Tr2, a readout transistor Tr3, a first initialization transistor Tr4, and a second initialization transistor Tr5. One of the transfer transistor Tr2 and the first initialization transistor Tr4 performs an on/off operation based on a control signal output from the row control unit, and the other performs an on/off operation based on a control signal output from the column control unit.

Abstract: A solid-state imaging device includes a photodetecting unit, a row control unit, a column control unit, and a signal readout unit. The photodetecting unit includes M×N pixel units P(1,1) to P(M,N) two-dimensionally arrayed in M rows and N columns. Each pixel unit P(m,n) includes a photodiode PD, an amplifying transistor Tr1, a transfer transistor Tr2, a readout transistor Tr3, a first initialization transistor Tr4, and a second initialization transistor Tr5. One of the transfer transistor Tr2 and the first initialization transistor Tr4 performs an on/off operation based on a control signal output from the row control unit, and the other performs an on/off operation based on a control signal output from the column control unit.

Abstract: A solid-state imaging device (1) includes a light receiving unit (10), a row selection unit (20), a holding unit (30), a column selection unit (40), a reading unit (50), and a control unit (60). The light receiving unit (10) includes M×N pixel units (P1,1 to PM,N). The holding unit (30) includes 2N hold circuits (H1,1 to H2,N). In a first operation mode, the hold circuits (H1,n and H2,n) of the holding unit (30) operate in parallel to alternately perform data sampling and alternately perform data output. The reading unit (50) outputs data Dout according to an amount of light incident on a photodiode of the pixel unit (Pm,n) based on the data alternately output from the hold circuits (H1,n and H2,n) of the holding unit (30).

Abstract: A solid-state imaging device (1) includes a light receiving unit (10), a row selection unit (20), a holding unit (30), a column selection unit (40), a reading unit (50), and a control unit (60). The light receiving unit (10) includes M×N pixel units (P1,1 to PM,N). The holding unit (30) includes 2N hold circuits (H1,1 to H2,N). In a first operation mode, the hold circuits (H1,n and H2,n) of the holding unit (30) operate in parallel to alternately perform data sampling and alternately perform data output. The reading unit (50) outputs data Dout according to an amount of light incident on a photodiode of the pixel unit (Pm,n) based on the data alternately output from the hold circuits (H1,n and H2,n) of the holding unit (30).

Abstract: The solid-state imaging device 1 includes an imaging photodetecting section 10, a trigger photodetecting section 20, a row selection section 30, a column selection section 40, a holding section 50, a pixel data output section 60, a trigger data output section 70, and a control section 80. In a shutter method of the solid-state imaging device 1, the start of a charge accumulation period is common to all rows of the imaging photodetecting section 10, while the end of the charge accumulation period varies row by row of the imaging photodetecting section 10, and there is a signal readout period subsequent to the charge accumulation period in each row of the imaging photodetecting section 10. Accordingly, a solid-state imaging device that can perform high-accuracy imaging even when the incident period of light to be imaged is considerably short is realized.

Abstract: The solid-state imaging device 1 includes an imaging photodetecting section 10, a trigger photodetecting section 20, a row selection section 30, a column selection section 40, a holding section 50, a pixel data output section 60, a trigger data output section 70, and a control section 80. The control section 80, when an absolute value of trigger data has changed into a state of being in excess of a first threshold, and then the state has continued for a predetermined time ?1 or more, judges it as a start of a light incidence, and starts a charge accumulating operation for each pixel unit, and when an absolute value of trigger data has changed into a state of being less than a second threshold, and then the state has continued for a predetermined time ?2 or more, judges it as an end of a light incidence, and causes a charge transferring operation and a data outputting operation to be performed for each pixel unit.

Abstract: A solid-state imaging device 1 according to an embodiment of the invention includes: pixel units P(x, y) each of which includes a photoelectric conversion element and an amplifying unit for a pixel unit and which are two-dimensionally arranged; at least one row of optical black units Pob(x, y) each of which includes a photoelectric conversion element, an amplifying unit for a pixel unit, and a light shielding film that covers the photoelectric conversion element, the photoelectric conversion element and the amplifying unit for a pixel unit being the same as those of the pixel unit P(x, y); and at least one row of optical gray units Pog(x, y) each of which includes an amplifying unit for a pixel unit which is the same as that of the pixel unit and to which a reference voltage is input. The value of the reference voltage is less than the value of the output signal from the photoelectric conversion element in a saturated state.

Abstract: A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L1n. The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L2n. The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to accumulate charge generated in a photodiode in a charge accumulating section. m1 and m2 are different from each other.

Abstract: A solid-state image pickup device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, a first readout section 40, a second readout section 50, and a control section 60. Data of pixel units of rows in the light receiving section 10 selected by the first row selecting section 20 are output by the first readout section 40 to obtain image pickup data, and further, data of the pixel units of rows in the light receiving section 10 selected by the second row selecting section 30 are output by the second readout section 50 to obtain communication data.

Abstract: A blinking-signal device 1 includes a light receiving section 10, a row selecting section 20, a readout section 30, a detecting section 40, and a control section 50. By the row selecting section 20, charge generated in its photodiode of each pixel unit P2i-1,n of the (2i?1)-th row in the light receiving section 10 is accumulated in its charge accumulating section during a first period, and charge generated in its photodiode of each pixel unit P2i,n of the 2i-th row in the light receiving section 10 is accumulated in its charge accumulating section during a second period. With the detecting section 40, it is detected whether or not light reaching the pixel units P2i-1,n and P2i,n is a blinking signal on the basis of a difference between data D2i-1,n and D2i,n of the pixel units P2i-1,n and P2i output from the readout section 30.

Abstract: The solid-state imaging device 1 includes an imaging photodetecting section 10, a trigger photodetecting section 20, a row selection section 30, a column selection section 40, a holding section 50, a pixel data output section 60, a trigger data output section 70, and a control section 80. In a shutter method of the solid-state imaging device 1, the start of a charge accumulation period is common to all rows of the imaging photodetecting section 10, while the end of the charge accumulation period varies row by row of the imaging photodetecting section 10, and there is a signal readout period subsequent to the charge accumulation period in each row of the imaging photodetecting section 10. Accordingly, a solid-state imaging device that can perform high-accuracy imaging even when the incident period of light to be imaged is considerably short is realized.

Abstract: A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L1n. The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L2n. The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to accumulate charge generated in a photodiode in a charge accumulating section. m1 and m2 are different from each other.

Abstract: The solid-state imaging device 1 includes an imaging photodetecting section 10, a trigger photodetecting section 20, a row selection section 30, a column selection section 40, a holding section 50, a pixel data output section 60, a trigger data output section 70, and a control section 80. The control section 80, when an absolute value of trigger data has changed into a state of being in excess of a first threshold, and then the state has continued for a predetermined time ?1 or more, judges it as a start of a light incidence, and starts a charge accumulating operation for each pixel unit, and when an absolute value of trigger data has changed into a state of being less than a second threshold, and then the state has continued for a predetermined time ?2 or more, judges it as an end of a light incidence, and causes a charge transferring operation and a data outputting operation to be performed for each pixel unit.