Abstract: A pixel section Pm,n includes a photodiode PD, a first capacitance section C1, a second capacitance section C2, and transistors T1-T6. The transistor T1 transfers the electric charge generated by the photodiode PD to the first capacitance section C1. The transistor T2 transfers the electric charge generated by the photodiode PD to the second capacitance section C2. The amplification transistor T3 outputs a voltage value corresponding to the amount of electric charge accumulated in the first capacitance section C1. The transistor T4 selectively outputs to the wiring L1,n the voltage value outputted from the amplification transistor T3. The transistors T3 and T4 constitute a source follower circuit. The transistors T5 and T6 selectively output to the wiring L2,n the electric charge accumulated in each of the first capacitance section C1 and the second capacitance section C2.

Abstract: An image sensing apparatus (10) has n photodiodes (PD1-PDn), signal processors (SP1-SPn), and output switches (SW1-SWn) connected to each other. Each signal processor includes an integrator (12) for amplifying an output from the photodiode, a buffer (14) for holding an output from the integrator (12), a first switch (16) inserted between the photodiode and the integrator (12), a second switch (18) for connecting the photodiode and an overflow drain (Vofd), a third switch (20) inserted between the integrator (12) and the buffer (14), a fourth switch (22) for connecting the buffer (14) and a reference voltage (Vref) source, and a controller (24) for controlling the ON/OFF operation of the first to fourth switches based on the comparison result between an output voltage from the integrator (12) and the reference voltage (Vref).

Abstract: The first opening 31 and second opening 32 are formed in the rotating plate 3 attached to the rotation axis 2 of an absolute encoder 1 in a prescribed positional relation, and a two-dimensional profile sensor 5 is installed so as to face the lower side 3a of the rotating plate 3. Also, a light supplying unit 4 consisting of light sources 41 and 42 is installed so as to face the photosensitive area of the profile sensor 5 with the openings 31 and 32 of the rotating plate 3 placed therebetween. And, based on a correlation between the first detected position P1 and second detected position P2 where measuring light emitted from the light sources 41 and 42 is passed through the openings 31 and 32 of the rotating plate 3 and is detected by the profile sensor 5, an absolute value of the rotating angle of the rotation axis 2 is calculated, wherein it is possible to achieve an absolute encoder capable of accurately measuring the absolute value of the rotating angle of the rotation axis with a simple construction.

Abstract: A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41, 42 and 43 formed on the surface of the semiconductor substrate 40. Accordingly, the first photosensitive portion includes a portion of the semiconductor substrate 40 and the semiconductor regions 41, thus configuring a photodiode. The photosensitive region on one side contained in the second photosensitive region includes a portion of the semiconductor substrate 40 and the semiconductor regions 42, thus configuring a photodiode. The photosensitive region on the other side contained in the second photosensitive region includes a portion of the semiconductor substrate 40 and the semiconductor regions 43, thus configuring a photodiode. Each of the semiconductor regions 42 and 43 is in a shape of an approximate triangle, and is formed so that one side of the regions 42 is adjacent to one side of the region 43, and vice versa, in one pixel.

Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a source terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.

Abstract: A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41 and 42 formed on the surface of the semiconductor substrate 40. Accordingly, each photosensitive portion includes a portion of the semiconductor substrate 40 and a pair of the regions 41 and 42, thus configuring a photodiode. Each of the regions 41 and 42 is in a shape of an approximate triangle, and is formed so that one side of the regions 41 is adjacent to one side of the region 42, and vice versa, in one pixel. A first wire 44 is for electrically connecting the regions 41 on one side in each pixel across a first direction, and is provided extending in the first direction between the pixels. The second wire 47 is for electrically connecting the regions 47 on the other side in each pixel across a second direction, and is provided extending in the second direction between the pixels.

Abstract: An image sensing apparatus (10) has n photodiodes (PD1-PDn), signal processors (SP1-SPn), and output switches (SW1-SWn) connected to each other. Each signal processor includes an integrator (12) for amplifying an output from the photodiode, a buffer (14) for holding an output from the integrator (12), a first switch (16) inserted between the photodiode and the integrator (12), a second switch (18) for connecting the photodiode and an overflow drain (Vofd), a third switch (20) inserted between the integrator (12) and the buffer (14), a fourth switch (22) for connecting the buffer (14) and a reference voltage (Vref) source, and a controller (24) for controlling the ON/OFF operation of the first to fourth switches based on the comparison result between an output voltage from the integrator (12) and the reference voltage (Vref).