Abstract: A solid-state imaging device 1 is provided with (1) a photodetecting section 11 in which M×N of pixels are two-dimensionally arranged in M rows and N columns, and a pixel Pm,n at the m-th row and the n-th column includes a photodiode PD1m,n, (2) a row selecting section 20 that selects one or more rows, out of M rows of the photodetecting section 11, instructs each pixel in the selected rows to accumulate an electric charge generated in the photodiode PD1m,n in response to the incidence of light, and instructs to output data corresponding to the amount of accumulated electric charge of each pixel by each row of the photodetecting section 11, and (3) a first signal processing section 30 that inputs data of each pixel, outputted by each row of the photodetecting section 11 by an instruction from the row selecting section 20, and outputs the data by each pixel.

Abstract: A solid-state image pickup device 1 includes an imaging photodetecting section 10, a triggering photodetecting section 20, a row selecting section 30, a column selecting section 40, a voltage holding section 50, an output section 60, and a controlling section 70. The imaging photodetecting section 10 is for taking an image of incident light, and includes pixel sections P1,1 to PM,N arrayed two dimensionally in M rows and N columns. The triggering photodetecting section 20 is for detecting an incidence of light, and includes a triggering photodiode that generates electric charge of an amount according to an incident light intensity.

Abstract: The present invention relates to a photo-detecting apparatus capable of obtaining the intensity distribution of incident light at the same timing even when the intensity distribution of incident light may change with time. The photo-detecting apparatus comprises a photo-detecting section in which plural pixels are arranged in a two-dimensional array, and a signal processing section. Each of plural pixels constituting the photo-detecting section has a first photodiode and a second photodiode, N first photodiodes included in the group of pixels constituting the m-th row of the two-dimensional array being electrically connected to each other through multiple lines, while M second photodiodes included in the group of pixels constituting the n-th column of the two-dimensional array being electrically connected to each other through other multiple lines.

Abstract: The present invention relates to a distortion detecting system and a distortion detecting method having a structure for efficiently detecting distortion of a projected image that is projected onto a projected surface by a projector. The distortion detecting system includes a photodetecting apparatus, and an analyzing apparatus. When a reference brightness image is projected onto the projected surface by the projector, the photodetecting apparatus forms the projected image on the projected surface onto the photosensitive surface of the photodetector, and outputs light intensity profile data that indicates a one-dimensional distribution of incident light intensity in each of a first direction and a second direction on an image for inspection formed on the photosensitive surface.

Abstract: The present invention relates to, for example, an image pickup system having a structure capable of imaging a subject at a low power consumption and a low cost even when the subject may be dark. The image pickup system comprises an image pickup device, a peak position detecting section, a partial image acquiring section, and a partial image operating section. The image pickup device outputs image data that represents the two-dimensional intensity distribution of light incident on a photodetecting section, and outputs light intensity profile data that represents the one-dimensional intensity distribution of the incident light in each of first and second directions in the photodetecting section. The peak position detecting section detects a light intensity peak position in the two-dimensional intensity distribution of the light incident on the photodetecting section in the image pickup device, based on the light intensity profile data outputted from the image pickup device.

Abstract: It is intended to provide a radioactive tyrosine derivative represented by the formula (I) or a pharmaceutically acceptable salt thereof: wherein R1 represents a group selected from the group consisting of —11CH3, —11CH2CH3, —CH218F, and —CH2CH2CH218F.

Abstract: An encoder is provided as one capable of accurately detecting an absolute value of an operating angle or the like of a scale plate in a simple configuration. In this encoder, each of light relay portions 4 formed along an operational direction ? in the scale plate has a pattern of a one-dimensional array of some of optically transparent potions 5 and optically nontransparent portions 6 different from those of the other light relay portions. This allows the encoder to identify the light relay portion 4 located on a light receiving region 100, based on second light intensity profile data VY(m), using the patterns as codes. In the identification of the light relay portion 4, the light relay portion 4 can be accurately identified with respect to a position of a reference light propagation portion 7 formed for each light relay portion 4 in the scale plate.

Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a drain terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.

Abstract: The present invention relates to an encoder capable of detecting an absolute value of an angle of rotation or the like of a target to be measured by a simple configuration with high accuracy. In the encoder, a photodetecting region of a photodetecting device and regions to be detected arranged on a scale plate satisfy a relational expression of W/2<D<W provided that a width of a photodetecting region is defined as W and arrangement pitches of the regions to be detected alternately arranged on two lines are defined as D. In this relationship, at least one of two regions to be detected adjacent to each other is always at a position overlapping the photodetecting region.

Abstract: The present invention relates to a photo-detecting apparatus having a structure for enabling photodetection with high sensitivity and wide dynamic range. When light is incident on a pixel section of an active pixel-type within a photo-detecting section, a voltage value corresponding to the amount of an electric charge generated at a photodiode included in the pixel section is outputted from the pixel section by way of a selecting transistor. A first pixel data readout section outputs the output from the pixel section as a first voltage value. On the other hand, the electric charge generated at the photodiode including the pixel section is outputted from the pixel section by way of a discharging transistor. The electric charge flown in a second pixel data readout section via a switch is accumulated in a capacitive element, and a voltage value corresponding to the amount of the accumulated electric charge is outputted from the second pixel data readout section as a second voltage value.

Abstract: First integrating circuits 110 convert electric currents from one group of photosensitive portions electrically connected to each other in a plurality of pixels arranged in a first direction into voltages, and output the voltages. First S/H circuits 130 hold and output the voltages outputted from the first integrating circuits 110. A first maximum value detecting circuit 140 detects the maximum value of the voltages outputted from the first S/H circuits 130. First level shift circuits 170 shift levels of the voltages outputted from the first S/H circuits 130. A first A/D converter circuit 180 sets a range from the maximum value detected by the first maximum value detecting circuit 140 to a value smaller than the maximum value by a predetermined value as an A/D conversion range, and converts the voltages outputted from the first S/H circuits 130 into digital values within the A/D conversion range.

Abstract: A first integrating circuit 23 converts and outputs electric currents, which are successively input from first groups of photosensitive portions via first switches 21, into and as a voltage. A first CDS circuit 24 outputs a voltage that is in accordance with the variation amount of the voltage from the first integrating circuit 23. A first A/D conversion circuit 25 successively inputs the voltage from the first CDS circuit 24 and converts and outputs the voltage into and as digital values. A first digital memory 26 stores the digital values, which, among the digital values output from the first A/D conversion circuit 25, corresponds to a first period, and the digital values corresponding likewise to a second period and outputs the stored digital values to a first difference operational circuit 27.

Abstract: A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41, 42 and 43 formed on the surface of the semiconductor substrate 40. Accordingly, the first photosensitive portion includes a portion of the semiconductor substrate 40 and the semiconductor regions 41, thus configuring a photodiode. The photosensitive region on one side contained in the second photosensitive region includes a portion of the semiconductor substrate 40 and the semiconductor regions 42, thus configuring a photodiode. The photosensitive region on the other side contained in the second photosensitive region includes a portion of the semiconductor substrate 40 and the semiconductor regions 43, thus configuring a photodiode. Each of the semiconductor regions 42 and 43 is in a shape of an approximate triangle, and is formed so that one side of the regions 42 is adjacent to one side of the region 43, and vice versa, in one pixel.

Abstract: A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41 and 42 formed on the surface of the semiconductor substrate 40. Accordingly, each photosensitive portion includes a portion of the semiconductor substrate 40 and a pair of the regions 41 and 42, thus configuring a photodiode. Each of the regions 41 and 42 is in a shape of an approximate triangle, and is formed so that one side of the regions 41 is adjacent to one side of the region 42, and vice versa, in one pixel. A first wire 44 is for electrically connecting the regions 41 on one side in each pixel across a first direction, and is provided extending in the first direction between the pixels. The second wire 47 is for electrically connecting the regions 47 on the other side in each pixel across a second direction, and is provided extending in the second direction between the pixels.

Abstract: A signal processing circuit 20 has switches 21, a shift register 22, and an integrating circuit 23, and outputs voltages Vout indicating luminance profiles in a second direction and in a first direction of light incident to a photosensitive region 10. The switches 21 are provided corresponding to groups of photosensitive portions on one side electrically connected among a plurality of pixels arrayed in the first direction and corresponding to groups of photosensitive portions on another side electrically connected among a plurality of pixels arrayed in the second direction. The shift register 22 is an element for sequentially reading electric currents from the groups of photosensitive portions on one side in the second direction and for sequentially reading electric currents from the groups of photosensitive portions on another side in the first direction.

Abstract: A signal processing circuit 20 has switches 21, a shift register 22, and an integrating circuit 23, and outputs voltages Vout indicating luminance profiles in a second direction and in a first direction of light incident to a photosensitive region 10. The switches 21 are provided corresponding to groups of photosensitive portions on one side electrically connected among a plurality of pixels arrayed in the first direction and corresponding to groups of photosensitive portions on another side electrically connected among a plurality of pixels arrayed in the second direction. The shift register 22 is an element for sequentially reading electric currents from the groups of photosensitive portions on one side in the second direction and for sequentially reading electric currents from the groups of photosensitive portions on another side in the first direction.

Abstract: The first opening 31 and second opening 32 are formed in the rotating plate 3 attached to the rotation axis 2 of an absolute encoder 1 in a prescribed positional relation, and a two-dimensional profile sensor 5 is installed so as to face the lower side 3a of the rotating plate 3. Also, a light supplying unit 4 consisting of light sources 41 and 42 is installed so as to face the photosensitive area of the profile sensor 5 with the openings 31 and 32 of the rotating plate 3 placed therebetween. And, based on a correlation between the first detected position P1 and second detected position P2 where measuring light emitted from the light sources 41 and 42 is passed through the openings 31 and 32 of the rotating plate 3 and is detected by the profile sensor 5, an absolute value of the rotating angle of the rotation axis 2 is calculated, wherein it is possible to achieve an absolute encoder capable of accurately measuring the absolute value of the rotating angle of the rotation axis with a simple construction.

Abstract: A first integrating circuit 23 converts and outputs electric currents, which are successively input from first groups of photosensitive portions via first switches 21, into and as a voltage. A first CDS circuit 24 outputs a voltage that is in accordance with the variation amount of the voltage from the first integrating circuit 23. A first A/D conversion circuit 25 successively inputs the voltage from the first CDS circuit 24 and converts and outputs the voltage into and as digital values. A first digital memory 26 stores the digital values, which, among the digital values output from the first A/D conversion circuit 25, corresponds to a first period, and the digital values corresponding likewise to a second period and outputs the stored digital values to a first difference operational circuit 27.

Abstract: A photodetecting unit 5 comprises a photosensitive region 10, a first signal processing circuit 20, and a second signal processing circuit 30. In photosensitive region 10, pixels 11mn are arrayed two-dimensionally in M rows and N columns. One pixel is arranged by adjacently positioning in the same plane a photosensitive portion 12mn and a photosensitive portion 13mn, each outputting a current that is in accordance with the intensity of light that is made incident thereon. Across each of the pluralities of pixels 1111 to 111N, . . . , 11M1 to 11MN, aligned in a first direction in the two-dimensional array, one photosensitive portion 12mn of each corresponding pixel is electrically connected to the same photosensitive portion 12mn of each of the other corresponding pixels. Also across each of the pluralities of pixels 1111 to 11M1, . . .

Abstract: First integrating circuits 110 convert electric currents from one group of photosensitive portions electrically connected to each other in a plurality of pixels arranged in a first direction into voltages, and output the voltages. First S/H circuits 130 hold and output the voltages outputted from the first integrating circuits 110. A first maximum value detecting circuit 140 detects the maximum value of the voltages outputted from the first S/H circuits 130. First level shift circuits 170 shift levels of the voltages outputted from the first S/H circuits 130. A first A/D converter circuit 180 sets a range from the maximum value detected by the first maximum value detecting circuit 140 to a value smaller than the maximum value by a predetermined value as an A/D conversion range, and converts the voltages outputted from the first S/H circuits 130 into digital values within the A/D conversion range.