Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

Abstract: A semiconductor lamination portion is formed on a substrate by laminating semiconductor layers so as to form a light emitting layer, and a plurality of light emitting units are formed by separating the semiconductor lamination portion electrically into a plurality of units. Each of the units has a pair of electric connecting portions which are connected to a pair of conductivity type layers and they are connected to each other with a wiring film. Each of the plurality of the light emitting units is separated electrically by dividing the conductivity type layers of the semiconductor lamination portion with at least twofold separating grooves (a first separating groove and a second separating groove). As a consequence, a semiconductor light emitting device with a high luminance and being formed in a monolithic type having a plurality of light emitting units can be obtained to solve a problem of a short-circuit occurrence between the light emitting units while keeping high reliability of wiring or the like.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.

Abstract: A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the active layer, respectively and having a different conductivity type each other and furthermore a window layer is provided above the second clad layer. The second clad layer is made of a semiconductor having refractive index greater than that of the first clad layer. More preferably the window layer is made of a semiconductor having a refractive index greater than that of the second clad layer. As a result, the absorption of the light emitted from the light emitting layer in the semiconductor substrate can be reduced, and the light can be attracted toward the top surface so that the external quantum efficiency can be advanced.

Abstract: A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.

Abstract: A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

Abstract: A semiconductor light emitting device of double hetero junction comprising an active layer; and clad layers comprising an n-type layer and p-type layer, the clad layers sandwiching the active layer, a band gap energy of the clad layers being larger than that of the active layer; wherein band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

Abstract: A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductur substrate is employed.

Abstract: A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the active layer, respectively and having a different conductivity type each other and furthermore a window layer is provided above the second clad layer. The second clad layer is made of a semiconductor having refractive index greater than that of the first clad layer. More preferably the window layer is made of a semiconductor having a refractive index greater than that of the second clad layer. As a result, the absorption of the light emitted from the light emitting layer in the semiconductor substrate can be reduced, and the light can be attracted toward the top surface so that the external quantum efficiency can be advanced.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into a plurality of light emitting unit portions (A), electrode pad portion B, and connecting portions C for connecting between the electrode pad portion B and the light emitting unit portions A or between two of the light emitting unit portions (A), and the semiconductor laminating portion between the respective light emitting unit portions A is removed through etching to make clearances except for the connecting portions C. The bonding electrode is formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion nonluminous.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor, layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductur substrate is employed.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor, layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductur substrate is employed.

Abstract: A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion (9), a p-side electrode (7) is provided on a portion of a surface of the current dispersion layer (5) through a contact layer (6) comprising p-type GaAs, and an n-side electrode (8) is provided on a back. surface of the GaAs substrate (1). Vickers' hardness of the current dispersion layer (5) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.

Abstract: A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.