Abstract: By (a) performing a first treatment process to a substrate in a first apparatus, (b) moving the substrate having undergone the first treatment process into an airtight passage communicating with the first apparatus and shut off from outside and thereafter, shutting off the communication between the passage and the first apparatus, (c) setting the passage to communicate with a second apparatus to move the substrate into the second apparatus, and (d) performing a second treatment process in the second apparatus, the treatment processes are performed in treatment apparatuses suitable therefor without the substrate being exposed to the outside air. As a result, the time between the treatment processes is reduced and the availability ratio of the expensive equipment is improved.

Abstract: A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.

Abstract: A semiconductor light emitting device comprising: a substrate; and a gallium nitride type compound semiconductor layers provided on the substrate, the semiconductor layers including at least an N-type layer and a P-type layer; wherein an N-type side electrode connected to a gallium nitride type compound semiconductor of the N-type layer and a P-type side electrode connected to a gallium nitride type compound semiconductor of the P-type layer are provided, wherein the dopant for the gallium nitride type compound semiconductor layer of the P-type layer is Be.

Abstract: A manufacturing method of semiconductor light emitting element including the steps of: (a) laminating a gallium nitride compound semiconductor layer for forming a luminous part on a substrate including at least an n-type layer and a p-type layer, by organic metal compound vapor phase growth method, (b) forming the gallium nitride compound semiconductor layer in a nitrogen gas atmosphere after laminating, and lowering the ambient temperature to the temperature for growing a GaAs compound in vapor phase and annealing the p-type layer of the gallium nitride compound semiconductor, (c) forming a film of at least one type selected from the group consisting of GaAs, GaP, InAs, InP, all doped with Mg, and part of these group III elements replaces by Al.

Abstract: An LED printhead is provided which comprises at least one LED chip having a plurality of light emitting portions, and drive at least one drive IC for selectively actuating the light emitting portions of the LED chip for light emission. Each of the light emitting portions includes a laminate of gallium nitride compound semiconductor layers formed on a surface of an insulating substrate. The light emitting portions are made to emit light having a wavelength of no more than 550 nm.

Abstract: A semiconductor memory device in which a stored information can be simply erased only by an electric signal so as to be rewritten is provided. The semiconductor memory device includes: (a) a semiconductor chip having an array of memory cells, stored information in the memory cells being erasable by light irradiation; (b) a light emitting element irradiating a light into the memory cells portion of the semiconductor chip; and (c) a package in which the semiconductor chip and the light emitting element are encapsulated with a resin in one body.

Abstract: A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

Abstract: A semiconductor comprising: a current blocking layer made of gallium nitride type compound; an active layer comprising a semiconductor made of gallium nitride type compound; an upper cladding layer and lower cladding layer made of gallium nitride compound wherein the active layer is provided between the upper and lower clad layers; wherein a stripe groove functioning as a current path is formed in said current blocking layer within at least one layer of the upper and lower clad layers.

Abstract: A superluminescent diode includes a semiconductor substrate of a first conductivity type. A lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cladding layer of a second conductivity type opposite to the first conductivity type is provided on the active layer. A current blocking layer of the first conductivity type is buried in the upper cladding layer. The current blocking layer has a stripe-shaped groove serving as a current-injection region. The current-injection region is formed in a manner that it extends from an end face of a chip to the inside of the chip, and has a length shorter than that of the chip. The current blocking layer is made of a material having a band gap energy not greater than that of the active layer and a refractive index not smaller than that of the active layer so that light advancing in the active layer is absorbable.

Abstract: A light emitting semiconductor device is provided which comprises a semiconductor chip and a sub-mount assembled with the semiconductor chip. The semiconductor chip includes a light-permeable insulating substrate and a laminate of semiconductor layers formed on a support surface of the insulating substrate for generating light to be emitted from a tail surface of the substrate. The sub-mount includes an electrically conductive substrate having a mounting surface facing the support surface of the insulating substrate. The mounting surface of the conductive substrate is formed with at least one auxiliary anode electrode which is electrically connected to the conductive substrate and an anode electrode of the semiconductor chip. The mounting surface of the conductive substrate is also formed with at least one auxiliary cathode electrode which is insulated from the conductive substrate but electrically connected to a cathode electrode of the semiconductor chip.

Abstract: In a light emitting device made of a group II-VI semiconductor, a P-type interface film including one or two layers is formed between the positive electrode and the uppermost P-type layer of the group II-VI semiconductor film, to make the energy band increase in steps from the electrode to the semiconductor film, thereby realizing a structure where the current flows at a low voltage. The II-VI semiconductor film is MBE-grown at a substrate temperature of 350.degree. C. or below. The P-type interface film is formed to have a carrier concentration of 10.sup.19 /cm.sup.3 or above by MBE growth at a substrate temperature lower than or equal to the substrate temperature at which the semiconductor film is formed.

Abstract: In a light emitting device made of a group II-VI semiconductor of ZnCdSSe or MgZnCdSSe, to facilitate the movement of electrons or holes from a GaAs substrate to a group II-VI semiconductor film and to flow the current at a low voltage, a ZnSe--AlGaAs super lattice layer is formed between the group II-VI semiconductor film and the GaAs substrate so that the energy band from the substrate to the group II-VI semiconductor film rises in steps or gradually. In an device where an N-type semiconductor layer of the group II-VI semiconductor film is arranged on the side of the substrate, a P-type semiconductor film which raises the energy band from the electrode to the P-type semiconductor layer in steps is formed between the electrode and the P-type semiconductor layer which is the top layer of the group II-VI semiconductor film.

Abstract: In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.

Abstract: A highly reliable semiconductor laser device capable of exhibiting a good current-light output characteristic and a fabrication process therefore is provided. The semiconductor laser device is provided with a step in a region adjacent a laser-light-emitting edge to separate an upper electrode into two, one of which is located adjacent the laser-light-emitting edge and does not allow current to flow in the underlying portion even if the other is applied with voltage, thereby forming a current-noninjection region in the region adjacent the later-light-emtting edge. Due to such an arrangement, deterioration of device characteristics due to local heat generation can be assuredly prevented without changing the structure adjacent the active layer and the current-confining structure which dominate the characteristics of the semiconductor laser.