Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: An electronic device protecting casing with heating function includes: a casing; a battery box within the casing; an interior of the battery box being arranged with a battery, a back side of the battery box being formed with an opening for receiving the battery; an outer cover serving to seal the opening; an inner side of the outer cover being formed with a heat isolation sheet; a heating unit being installed within the casing for heating the tablet computer; the heating unit including an electric heating plate. When power of the battery is transferred to the electric heating plate, the electric heating plate generates heat power and then transfers the power to the tablet computer for heating it; and a control circuit is installed within the casing; the electric heating plate is connected to the battery through a control switch; and the control circuit is connected to the control switch.

Abstract: An embodiment air conditioner for a vehicle includes a blower unit on an outer surface of a dash panel, the outer surface being opposite an inner surface facing an interior space of the vehicle, the blower unit including a blower fan and a filter, an air conditioning unit on the outer surface of the dash panel and coupled to a side of the blower unit between the blower unit and the interior space of the vehicle, and a distribution unit disposed on the inner surface of the dash panel and located between the air conditioning unit and air conditioning ducts provided in the interior space of the vehicle, wherein each of the blower unit, the air conditioning unit, and the distribution unit is coupled to be individually detachable.

Abstract: A fan control circuit with temperature compensation includes an on-off unit and a speed adjustment unit. When determining that a loading is greater than or equal to an adjustable start threshold according to a load signal, the on-off unit controls the fan entering a working mode. In the working mode and determining that the loading is less than a speed-adjusting threshold, the on-off unit maintains a speed value of the fan at a first fixed speed. When determining the loading is greater than or equal to the speed-adjusting threshold, the speed adjustment unit adjusts the speed value according to the loading. The speed adjustment unit generates a speed displacement according to a temperature signal to compensate the speed value.

Abstract: In one example in accordance with the present disclosure, an electronic device is described. The example electronic device includes an input device with a force sensor to measure a force applied to the input device. The example electronic device also includes a controller to receive a user selection of an object type for an object to be placed on a location of the input device. The controller is to determine a weight of the object in response to receiving the user selection. The controller is to also receive a force measurement from the force sensor in response to placement of the object on the input device. The controller is to calibrate the force sensor based on the object weight and the force measurement.

Abstract: An electrostatic discharge protection circuit includes an electrostatic discharge clamp between a first rail and a second rail, a trigger device configured to activate the electrostatic discharge clamp in response to an electrostatic discharge event, and a charge dissipation element between the first rail and the second rail to dissipate a residual charge at an input of the trigger device.

Abstract: A ring segment and a turbomachine including the ring segment are provided. The ring segment installed on an inner circumferential surface of a casing and disposed to face an end of a blade existing inside the casing, the ring segment includes a segment body disposed inside the casing in a radial direction of the casing and having a channel through which cooling air flows, and a pair of segment protrusions protruding outward from the segment body, coupled to the inner circumferential surface of the casing, and spaced apart from each other along a flow direction of fluid flowing through the casing to form an RS cavity through which cooling air flows, wherein the segment body includes a cavity for supplying cooling air introduced from the RS cavity to the channel.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: Provided in this disclosure are zirconium and hafnium complexes that contain 1) a cyclopentadienyl ligand; 2) an adamantyl-phosphinimine ligand; and 3) at least one other ligand. The use of such a complex, in combination with an activator, as an olefin polymerization catalyst is demonstrated. The catalysts are effective for the copolymerization of ethylene with an alpha olefin (such as 1-butene, 1-hexene, or 1-octene).

Abstract: A medical injection system is provided. The medical injection system comprises an injection module and the cartridge module coupled to the injection module. The injection module comprises a lead screw movable along an axial line into the cartridge module; a driver sleeve configured to partially accommodate the lead screw and to have a first sleeve end facing a distal end and having sleeve teeth, a dose plate including a first plate end facing the distal end, a second plate end facing a proximal end and having plate teeth corresponding to sleeve teeth, and a side surface located between the first plate end and the second plate end and having a surface tooth; and an indicia tube configured to accommodate the driver sleeve and the dose plate and to have tube concaves near a first tube end facing the distal end. The surface tooth corresponds to one of the tube concaves.

Abstract: An array of electrically erasable programmable read only memory (EEPROM) includes a first row of floating gate, a second row of floating gate, two spacers, a first row of word line and a second row of word line. The first row of floating gate and the second row of floating gate are disposed on a substrate along a first direction. The two spacers are disposed between and parallel to the first row of floating gate and the second row of floating gate. The first row of word line is sandwiched by one of the spacers and the adjacent first row of floating gate, and the second row of word line is sandwiched by the other one of the spacers and the adjacent second row of floating gate. The present invention also provides a method of forming said array of electrically erasable programmable read only memory (EEPROM).

Abstract: A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.

Abstract: A first FinFET device includes first fin structures that extend in a first direction in a top view. A second FinFET device includes second fin structures that extend in the first direction in the top view. The first FinFET device and the second FinFET device are different types of FinFET devices. A plurality of gate structures extend in a second direction in the top view. The second direction is different from the first direction. Each of the gate structures partially wraps around the first fin structures and the second fin structures. A dielectric structure is disposed between the first FinFET device and the second FinFET device. The dielectric structure cuts each of the gate structures into a first segment for the first FinFET device and a second segment for the second FinFET device. The dielectric structure is located closer to the first FinFET device than to the second FinFET device.

Abstract: A module substrate for a semiconductor module includes: a wiring substrate having an upper surface and a lower surface opposite to the upper surface, wherein the wiring substrate includes a circuit wiring and a plurality of via holes extending from the upper surface to the lower surface in a thickness direction; a plurality of test terminals respectively provided on the via holes and electrically connected to the circuit wiring, and a fastening thin film provided on the wiring substrate and covering the via holes, wherein the fastening thin film has a predetermined thickness such that a portion of the fastening thin film is penetrated when an interface is pin is inserted into the portion of the fastening thin film through the via hole from the upper surface, and the portion of the penetrated fastening thin film holds the penetrating interface inspection pin.

Abstract: A semiconductor device includes a substrate, first and second fins protruding from the substrate, and first and second source/drain (S/D) features over the first and second fins respectively. The semiconductor device further includes an isolation feature over the substrate and disposed between the first and second S/D features, and a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature. A top portion of the isolation feature extends above the dielectric layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes: a base substrate having an opening; and a first gate layer formed in the opening. In the first gate layer closes a top of the opening and the first gate layer includes at least one void. The semiconductor structure further includes a second gate layer formed on the first gate layer. An atomic radius of the material of the second gate layer is smaller than gaps among atoms of the material of the first gate layer and the void is filled by atoms of one of the material of the first gate layer and the material of the second gate layer.

Abstract: A method includes forming an active region on a substrate, forming a sacrificial gate stack engaging the active region, measuring a gate length of the sacrificial gate stack at a height lower than a top surface of the active region, selecting an etching recipe based on the measured gate length of the sacrificial gate stack, etching the sacrificial gate stack with the etching recipe to form a gate trench, and forming a metal gate stack in the gate trench.

Abstract: One or more computer processors determine a runtime feature set for a first container, wherein the runtime feature set includes aggregated temporally collocated container behavior. The one or more computer processors cluster the first container with one or more peer containers or peer pods based on a shared container purpose, similar container behaviors, and similar container file structure. The one or more computer processors determine an additional runtime feature set for each peer container. The one or more computer processors calculate a variance between the first container and each peer container. The one or more computer processors, responsive to the calculated variance exceeding a variance threshold, identify the first container as anomalous.

Abstract: The present implementations relate to a support structure for an input device that supports deflection of an input surface responsive to input forces exerted thereon and vibration of the input surface responsive to haptic feedback generated by a haptic actuator. The support structure includes one or more fixed structures mounted to a housing and a dynamic surface mounted to a sensor layer of the input device. A number of first deformable segments cantilever from the one or more fixed surfaces and deflect in a vertical direction when an input force is exerted on the sensor layer, where the input force is orthogonal to the input surface. A number of second deformable segments connect the plurality of first deformable segments to the dynamic surface and deflect in a horizontal direction when shear forces are exerted on the dynamic surface, where the shear forces are parallel to the input surface.