Abstract: A backlight module and a liquid crystal display utilizing the same. The backlight module has a heat-dissipating port and a thermally actuated device disposed therein. When the temperature inside the backlight module exceeds a predetermined limit, the thermally actuated device starts to open the heat-dissipating port. When the temperature inside the backlight module drops below the predetermined limit, the thermally actuated device closes the heat-dissipating port. The extent of the port controlled by the thermally actuated device varies with the temperature inside the backlight module.

Abstract: A method for detecting the endpoint of a chemical mechanical polishing (CMP) process uses the slope variation of temperature difference of polishing pad. The method combines temperature measurement at polishing pad and atmosphere, and numerical analysis to figure out the curve of temperature difference variation versus polishing time. The endpoint of CMP is determined by the change of the slope of the curve. The method allows endpoint to be detected in-situ at the polishing apparatus, without stopping polishing process.

Abstract: A method of improving surface planarity of a wafer. The method includes forming a first thin-film layer on the wafer using CVD in a first thin film deposition apparatus having at least one gas injector, relative to which the wafer has a first orientation, and forming a second thin-film layer on the wafer using CVD. The second deposition takes place in a second thin film deposition apparatus having at least one second gas injector arranged the same as that in the first thin film deposition apparatus, the wafer having a second orientation relative to the gas injector in the second thin film deposition apparatus. A first angle between the two orientations results in the second apparatus' injector distributing material in a different area from that of the first gas injector.

Abstract: An optical module is composed of three light-guide units and a holder for the units. Each of the light-guide units is made of a mirror plane used for reflecting and transmitting light installed between two prisms via the use of circularly applied glue. The holder includes three installation areas one installation area for each light-guide unit. Additionally, the holder has two frames that are arranged perpendicularly to each other and each frame is installed perpendicularly to the joining sides of two installation areas i.e. one frame is installed perpendicular to the side where installation area 1 and installation area 2 meet and the other frame is installed perpendicular to the side where installation area 2 and installation area 3 meet.

Abstract: The present invention relates to a process for biochemical treatment of waste water. The process uses a nano material such as carbon black to induce micro to degrade organic pollutants in the waste water which are generally unable or hard to be degraded and thereby greatly enhance the effect of biological cleaning of waste water. The effect is more prominent for the waste water that is hard to treat by the conventional biochemical treatment, high concentration waste water, and highly poisonous waste water. The process of the present invention is widely usable in the aerobic, oxygen-facultative or anaerobic biochemical treatment systems.

Abstract: The present invention provides a method of fabricating an interconnect structure. First, a semiconductor substrate comprising a conductive region containing a metal line and a hole is provided. Next, a titanium layer is formed on the semiconductor substrate. Next, a first titanium nitride layer is formed on the titanium layer by chemical vapor deposition. Finally, a second titanium nitride layer is formed on the first titanium nitride layer by physical vapor deposition.

Abstract: A primary circuit board is provided with an opening. A component is mounted on a secondary circuit board. The secondary circuit board is then mounted over the opening of the primary circuit board with the component disposed within the opening. An exposure height of the component over the primary circuit board is thus reduced, the exposure height being measured from a top surface of the component to a top surface of the primary circuit board.

Abstract: The invention provides a method for forming a dielectric layer in a semiconductor device by using etch stop layers, and a semiconductor structure formed by the method. The method in accordance with the invention comprises: providing a semiconductor substrate having raised portions and recessed portions; forming a first etch stop layer covering the raised portions and the recessed portions; forming a dielectric layer covering an upper surface of the first etch stop layer, wherein the dielectric layer has a thickness substantially smaller than that of each of the raised portions; forming a second etch stop layer covering the dielectric layer; and performing a planarizing step for polishing the second etch stop layer and the dielectric layer until exposing the first etch stop layer on an upper surface of the raised portions, and remaining a plurality of remaining portions of the second etch stop layer on the planarized surface, and remaining the dielectric layer between raised portions.

Abstract: The invention provides a method for forming a dielectric layer in a semiconductor device by using etch stop layers, and a semiconductor structure formed by the method. The method in accordance with the invention comprises: providing a semiconductor substrate having raised portions and recessed portions; forming a first etch stop layer covering the raised portions and the recessed portions; forming a dielectric layer covering an upper surface of the first etch stop layer, wherein the dielectric layer has a thickness substantially smaller than that of each of the raised portions; forming a second etch stop layer covering the dielectric layer; and performing a planarizing step for polishing the second etch stop layer and the dielectric layer until exposing the first etch stop layer on an upper surface of the raised portions, and remaining a plurality of remaining portions of the second etch stop layer on the planarized surface, and remaining the dielectric layer between raised portions.

Abstract: A wafer transfer method using a robot arm for sucking the front-side of the uppermost one of a plurality of wafers stored in a cassette, and for transferring the wafer having a tape adhered to the front-side thereof to a semiconductor tape-peeling device for tape-peeling. Although the wafer warps, the undesired effect that the robot arm crashes any of the wafers can be avoided by using this method.

Abstract: The present invention discloses a chemical mechanical polishing method with in-line thickness detection. First, the semiconductor wafer is loaded into CMP equipment and is putted on a loading table for the preparation of a CMP process. The CMP process is performed on the wafer for polishing. The CMP process is interrupted and the thickness of a polished thin film layer is detected by using an in-line thickness measurement technique. The thickness is determined whether or not being accepted by a specification of the CMP process. As the thickness is accepted by the specification, the wafer is cleaned, dried and moved out from the CMP equipment. Alternatively, the thickness is not accepted by the specification, it must be determined whether or not the thickness is less than the low limit of the specification. As the thickness is smaller than the low limit, the wafer is cleaned, dried after it is moved out from the CMP equipment.