Abstract: A thermal module includes an evaporator, a metal pipe, a main frame, a heat sink, a wick and a cooling liquid. The evaporator is in touch with a heat source and has a gas outlet and a liquid inlet. Two ends of the metal pipe connect separately with the gas outlet and the liquid inlet of the evaporator to from a closed loop. The metal pipe includes a vapor pipe, a condenser and a liquid pipe. The main frame connects with the wall of the metal pipe near the gas outlet. The heat sink is outside the condenser. The wick is positioned in an inner wall of the evaporator and in the gas outlet. The cooling liquid is in the closed loop.

Abstract: A heat dissipation device includes a hollow housing and a speaker. The hollow housing has a first opening and a second opening. The speaker is disposed at the first opening, wherein the speaker includes a diaphragm oscillating within a frequency scope the human ear cannot or hardly hear so as to generate airflow through the second opening.

Abstract: An insert-molding mold to combine an inserted piece and a plastic as a product includes a male mold, a female mold, and at least one adjustable support structure. The insert-molding mold may fit different inserted pieces with different thickness. The male mold includes a male mold body, and a male mold core disposed in the male mold body. The inserted piece has an inserted piece thickness. A distance may be generated between the female mold and the male mold core when the male mold matching with the female mold. The distance is larger than the inserted piece thickness. The support structure of the insert-molding mold may support the male mold core and adjust the distance between the female mold and the male mold core to fit the inserted piece thickness.

Abstract: A method for computer-aided plate punching is disclosed. The method includes the steps of reading and configuring processing data; reading a design drawing of a workpiece as a processing diagram; selecting needed figures from the processing diagram, and configuring template attributes to confirm contour of the workpiece; selecting operation modes and cutters for processing orifices; processing the orifices and generating cutters information; selecting operation modes and cutters for processing slots; processing the slots and generating cutters information; optimizing the cutters information, and generating a list of cutters; and converting the list of cutters into corresponding CNC codes. A related system is also disclosed.

Abstract: A long-term antibiotic and deodorant textile with mesoporous structure and processing method thereof are provided. At first, a textile is dipped into an aqueous solution of a surfactant containing nanoparticles. An aqueous solution of a silicon source is prepared and its pH value is adjusted to about 5˜9. Then, the aqueous solution of the surfactant and the aqueous solution of the silicon source are mixed to form a mixture solution. The mixture solution is stirred until silica powder form therein. The textile is taken out and dipped into water and organic solvent separately several times.

Abstract: A polishing pad, comprising a mounting surface and an opposing polishing surface with a polishing pattern having at least one aperture thereon, is formed with an adhesive layer adhered to the mounting surface with uniform adhesive strength therebetween. Embodiments include applying an adhesive layer to the mounting surface with uniform pressure prior to forming the polishing pattern on the polishing surface. Embodiments also include forming the polishing pattern having at least one aperture, forming a fitter having a surface pattern opposite to the polishing pattern and having a projection, positioning the fitter on the polishing pattern so that the projection fills the aperture in the polishing pattern forming a composite having substantially parallel opposing surfaces, applying pressure to bond the adhesive layer to the mounting surface with substantially uniform adhesive strength therebetween, and removing the fitter.

Abstract: Titanium dioxide nanoparticles are prepared in liquid phase at a low temperature. The titanium dioxide nanoparticles can be added into polyester to prepare polyester grains having a photocatalytic antibacterial property. Furthermore, a textile can be dipped into a solution containing the titanium dioxide nanoparticles to obtain a photocatalytic antibacterial textile.

Abstract: A method of improving surface planarity of a wafer. The method includes forming a first thin-film layer on the wafer using CVD in a first thin film deposition apparatus having at least one gas injector, relative to which the wafer has a first orientation, and forming a second thin-film layer on the wafer using CVD. The second deposition takes place in a second thin film deposition apparatus having at least one second gas injector arranged the same as that in the first thin film deposition apparatus, the wafer having a second orientation relative to the gas injector in the second thin film deposition apparatus. A first angle between the two orientations results in the second apparatus' injector distributing material in a different area from that of the first gas injector.

Abstract: A direct backlight module and liquid crystal display utilizing the same. The direct backlight module comprises a reflector, at least one light source, and a plurality of transparent supports. The reflector has an opening, and the light source is disposed parallel to the reflector. The transparent supports are disposed at each end of the light source to secure the light source. Thus, light emitted from the light source can be reflected by the reflector.

Abstract: The invention describes an expression factor and methods for inhibiting the growth of cells, for enhancing the activity of a drug, and for inhibiting the virulence of microbes. Methods of screening for expression factor inhibitors are also described. The compositions comprise at least one expression factor inhibitor and may further comprise at least one drug.

Abstract: A backlight module and a liquid crystal display utilizing the same. The backlight module has a heat-dissipating port and a thermally actuated device disposed therein. When the temperature inside the backlight module exceeds a predetermined limit, the thermally actuated device starts to open the heat-dissipating port. When the temperature inside the backlight module drops below the predetermined limit, the thermally actuated device closes the heat-dissipating port. The extent of the port controlled by the thermally actuated device varies with the temperature inside the backlight module.

Abstract: A method for detecting the endpoint of a chemical mechanical polishing (CMP) process uses the slope variation of temperature difference of polishing pad. The method combines temperature measurement at polishing pad and atmosphere, and numerical analysis to figure out the curve of temperature difference variation versus polishing time. The endpoint of CMP is determined by the change of the slope of the curve. The method allows endpoint to be detected in-situ at the polishing apparatus, without stopping polishing process.

Abstract: A method of improving surface planarity of a wafer. The method includes forming a first thin-film layer on the wafer using CVD in a first thin film deposition apparatus having at least one gas injector, relative to which the wafer has a first orientation, and forming a second thin-film layer on the wafer using CVD. The second deposition takes place in a second thin film deposition apparatus having at least one second gas injector arranged the same as that in the first thin film deposition apparatus, the wafer having a second orientation relative to the gas injector in the second thin film deposition apparatus. A first angle between the two orientations results in the second apparatus' injector distributing material in a different area from that of the first gas injector.

Abstract: An optical module is composed of three light-guide units and a holder for the units. Each of the light-guide units is made of a mirror plane used for reflecting and transmitting light installed between two prisms via the use of circularly applied glue. The holder includes three installation areas one installation area for each light-guide unit. Additionally, the holder has two frames that are arranged perpendicularly to each other and each frame is installed perpendicularly to the joining sides of two installation areas i.e. one frame is installed perpendicular to the side where installation area 1 and installation area 2 meet and the other frame is installed perpendicular to the side where installation area 2 and installation area 3 meet.

Abstract: The present invention relates to a process for biochemical treatment of waste water. The process uses a nano material such as carbon black to induce micro to degrade organic pollutants in the waste water which are generally unable or hard to be degraded and thereby greatly enhance the effect of biological cleaning of waste water. The effect is more prominent for the waste water that is hard to treat by the conventional biochemical treatment, high concentration waste water, and highly poisonous waste water. The process of the present invention is widely usable in the aerobic, oxygen-facultative or anaerobic biochemical treatment systems.

Abstract: The present invention provides a method of fabricating an interconnect structure. First, a semiconductor substrate comprising a conductive region containing a metal line and a hole is provided. Next, a titanium layer is formed on the semiconductor substrate. Next, a first titanium nitride layer is formed on the titanium layer by chemical vapor deposition. Finally, a second titanium nitride layer is formed on the first titanium nitride layer by physical vapor deposition.

Abstract: A primary circuit board is provided with an opening. A component is mounted on a secondary circuit board. The secondary circuit board is then mounted over the opening of the primary circuit board with the component disposed within the opening. An exposure height of the component over the primary circuit board is thus reduced, the exposure height being measured from a top surface of the component to a top surface of the primary circuit board.

Abstract: The invention provides a method for forming a dielectric layer in a semiconductor device by using etch stop layers, and a semiconductor structure formed by the method. The method in accordance with the invention comprises: providing a semiconductor substrate having raised portions and recessed portions; forming a first etch stop layer covering the raised portions and the recessed portions; forming a dielectric layer covering an upper surface of the first etch stop layer, wherein the dielectric layer has a thickness substantially smaller than that of each of the raised portions; forming a second etch stop layer covering the dielectric layer; and performing a planarizing step for polishing the second etch stop layer and the dielectric layer until exposing the first etch stop layer on an upper surface of the raised portions, and remaining a plurality of remaining portions of the second etch stop layer on the planarized surface, and remaining the dielectric layer between raised portions.

Abstract: The invention provides a method for forming a dielectric layer in a semiconductor device by using etch stop layers, and a semiconductor structure formed by the method. The method in accordance with the invention comprises: providing a semiconductor substrate having raised portions and recessed portions; forming a first etch stop layer covering the raised portions and the recessed portions; forming a dielectric layer covering an upper surface of the first etch stop layer, wherein the dielectric layer has a thickness substantially smaller than that of each of the raised portions; forming a second etch stop layer covering the dielectric layer; and performing a planarizing step for polishing the second etch stop layer and the dielectric layer until exposing the first etch stop layer on an upper surface of the raised portions, and remaining a plurality of remaining portions of the second etch stop layer on the planarized surface, and remaining the dielectric layer between raised portions.

Abstract: A wafer transfer method using a robot arm for sucking the front-side of the uppermost one of a plurality of wafers stored in a cassette, and for transferring the wafer having a tape adhered to the front-side thereof to a semiconductor tape-peeling device for tape-peeling. Although the wafer warps, the undesired effect that the robot arm crashes any of the wafers can be avoided by using this method.