Abstract: A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.

Abstract: Compositions and methods related to assessing the risk of cancer, such as breast cancer, lung cancer and bladder cancer, through analyzing the length of telomeres, such as chromosome 9p, 15p, and/or Xp telomere, such as the short arm of the 9p, 15p, and/or Xp telomere.

Abstract: Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode and substrate, the spacer layer having a first surface nearest the gate electrode and substrate, a second surface furthest from the gate electrode and substrate, and a continuously increasing etch rate from the first surface to the second surface, and etching the spacer layer to form a spacer on each side of the gate electrode. Embodiments further include forming the spacer layer by depositing a spacer material and continuously decreasing the density of the spacer material during deposition or depositing a carbon-containing spacer material and causing a gradient of carbon content in the spacer layer.

Abstract: Providing registration for password/challenge authentication includes receiving an access code or pattern inputted by a user, recording a time message associated with each component of the access code or pattern via a processor, generating a data record in combining each component of the access code or pattern with the associated time message, and storing the data record.

Abstract: A passive cooling system for a reactor core of a large-scale pressurized water reactor nuclear power plant includes a shield building having an outer wall and a through air inlet arranged on an upper part of the outer wall, a water tank arranged at an upper part of the shield building, a cooling water distribution plate arranged above a top of a containment within the shield building, a spray pipe arranged at an inside of the top of the shield building and having a water inlet end and a water outlet end, wherein the water inlet end is connected to a bottom of the water tank and the water outlet end is extended to be above the cooling water distribution plate, and an air deflector arranged between the shield building and the containment and having an upper end connected to an inside of the top of the shield building.

Abstract: Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a hardmask layer over the silicon composite layer and over the bottom surface of the silicon substrate, removing a section of the silicon composite layer around the bottom portion of the TSV using the hardmask layer as a mask, re-exposing the passivation layer, and removing the hardmask layer and the re-exposed passivation layer to expose a contact for the bottom portion of the TSV.

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:

Abstract: Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode and substrate, the spacer layer having a first surface nearest the gate electrode and substrate, a second surface furthest from the gate electrode and substrate, and a continuously increasing etch rate from the first surface to the second surface, and etching the spacer layer to form a spacer on each side of the gate electrode. Embodiments further include forming the spacer layer by depositing a spacer material and continuously decreasing the density of the spacer material during deposition or depositing a carbon-containing spacer material and causing a gradient of carbon content in the spacer layer.

Abstract: Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.

Abstract: Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.

Abstract: A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.

Abstract: Disclosed are compositions and methods related to assessing the risk of cancer, such as breast cancer, through analyzing the length of telomeres, such as chromosome 9p telomere, such as the short arm of the 9p telomere. If the 9p arm is shorter than normal, the risk of cancer is increased.

Abstract: A method (and semiconductor device) of fabricating a semiconductor device utilizes a thermal proximity correction (TPC) technique to reduce the impact of thermal variations during anneal. Prior to actual fabrication, a location of interest (e.g., a transistor) within an integrated circuit design is determined and an effective thermal area around the location is defined. Thermal properties of structures intended to be fabricated within this area are used to calculate an estimated temperature that would be achieved at the location of interest from a given anneal process. If the estimated temperature is below or above a predetermined target temperature (or range), TPC is performed. Various TPC techniques may be performed, such as the addition of dummy cells and/or changing dimensions of the structure to be fabricated at the location of interest (resulting in an modified thermally corrected design, to suppress local variations in device performance caused by thermal variations during anneal.

Abstract: Embodiments of the invention use a small piece of flex or rigid PCB as the cable plug. The wires of the cable are soldered onto the pads on the PCB with the pads so arranged that all the ground pads are tied together without needing a separate grounding bar. The signal and GND pads are so aligned such that minimum strip length is required for soldering and the symmetry of the differential signals is maintained.

Abstract: Embodiments of the invention use a small piece of flex or rigid PCB as the cable plug. The wires of the cable are soldered onto the pads on the PCB with the pads so arranged that all the ground pads are tied together without needing a separate grounding bar. The signal and GND pads are so aligned such that minimum strip length is required for soldering and the symmetry of the differential signals is maintained.

Abstract: A method for operating an apparatus for decelerating and temporarily accumulating a hot rolled long product. The product is deposited on a rotating drum in the form of a helix, and is simultaneously unwound from the drum to a receiving guide movable incrementally along a path parallel to the rotational axis of the drum. Immediately upon entry of the product front end into the receiving guide, the incremental movement of the receiving guide is preceded by an initial rapid shifting through a distance adequate to prevent subsequent product convolutions of the helix from buckling and overlapping.

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:

Abstract: A method for operating an apparatus for decelerating and temporarily accumulating a hot rolled long product. The product is deposited on a rotating drum in the form of a helix, and is simultaneously unwound from the drum to a receiving guide movable incrementally along a path parallel to the rotational axis of the drum. Immediately upon entry of the product front end into the receiving guide, the incremental movement of the receiving guide is preceded by an initial rapid shifting through a distance adequate to prevent subsequent product convolutions of the helix from budding and overlapping.

Abstract: A method and an apparatus for retrieving a form template including one or more rendering attributes for rendering one or more partitions of a form are described. Whether the partitions of the form can be rendered in compliance with style constraints is determined according to the rendering attributes. An updated form template is generated such that at least one of the rendering attributes is updated. Partitions of the form can be rendered based on the updated template in compliance with the style constraints.

Abstract: A device for detecting the presence or amount of an analyte in a fluid sample and method thereof, comprises a sample collector and a receiving cup for receiving and holding the sample collector within the receiving cup. The sample collector contains a compressible absorbent member for collecting the fluid sample, and has a first position and a second, locked position within the receiving cup. The absorbent member is uncompressed in the first position and is compressed in the second, locked position. The sample collector or the receiving cup has at least one test element having reagents for detecting the presence or amount of the analyte in the fluid sample.