Abstract: The present application relates to particular anti-PAD4 (peptidyl arginine deiminase 4) antibodies, nucleic acids encoding the antibodies, vectors and host cells comprising the nucleic acids, and methods of making and using the antibodies.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes nanostructures spaced apart from each other in a first direction and a gate structure formed over and around the nanostructures. The semiconductor structure further includes a gate spacer covering a sidewall of the gate structure and a source/drain structure attached to the nanostructures in a second direction. The semiconductor structure further includes a contact spaced apart from the gate structure by the gate spacer in the second direction and a first conductive structure landing over the gate structure. The semiconductor structure further includes a second conductive structure formed over the gate spacer. In addition, a portion of the second conductive structure is sandwiched between the first conductive structure and the contact.

Abstract: A rapid detection tool for a coaxial relationship based on a photosensitive material and a detection method using the same are used to detect coaxiality of two through-holes in the same workpiece to be detected. An image processing unit and a control unit are mounted outside a light-shielding box. Light sources, cameras, sensors, and an air cylinder are mounted in the light-shielding box. A photosensitive plate coated with a photosensitive resin is placed between the two holes, and two sides are irradiated by the light sources. Coordinates of centers of circular patterns formed on the photosensitive plate are calculated so that a coaxial relationship between the two holes can be accurately obtained. An output rod of the air cylinder is controlled to extend outward to reject a workpiece to be detected not meeting requirements.

Abstract: An active device substrate including a substrate, a transfer wire, a first insulating layer, a second insulating layer, a first semiconductor pattern, a second semiconductor pattern, a first connection structure, a second connection structure, a first gate, a second gate, a third insulating layer, a first source/drain, and a second source/drain is provided. The first insulating layer is located above the transfer wire. The second insulating layer is located above the first insulating layer. The first semiconductor pattern and the second semiconductor pattern are located between the first insulating layer and the second insulating layer. The first connection structure and the second connection structure are located above the second insulating layer and electrically connected to the transfer wire. The first gate and the second gate respectively overlap the first semiconductor pattern and the second semiconductor pattern.

Abstract: A control valve, includes a valve body, a valve core, and a sealing component. The control valve includes communication ports; the communication ports are communicated with a valve cavity (101); the communication ports comprise first communication ports; the first communication ports are arranged along the height direction of a side wall portion and the circumferential direction of the side wall portion; two first communication ports is arranged on the side wall portion along the circumferential direction of the side wall portion; the sealing component includes a sealing body portion; the sealing body portion is located between the valve core (20) and the side wall portion; the sealing body portion has through holes.

Abstract: A control valve includes a valve body and a valve core; the valve body comprises a side wall part; the control valve has a valve cavity, the control valve comprises at least five channels, one end of each channel is in communication with the valve cavity, and the other end forms a valve port of the control valve; the valve core includes an internal guide passage cavity, a plurality of external guide passage cavities, a first separation plate, and a second separation plate; the first separation plate is located between the internal guide passage cavity and an external guide passage cavity, and the second separation plate is located between two adjacent external guide passage cavities; the first separation plate has a communication hole, and the internal guide passage cavity is in communication with a portion of the external guide passage cavities by means of the communication hole.

Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.

Abstract: A control valve includes a valve body and a valve core. The valve core includes a top plate, a bottom plate, a first stop block and a valve core shaft assembly. The valve core shaft assembly includes a transmission connection part. At least part of the transmission connection part is position on the side of the top plate away from the bottom plate. The first stop block is fixedly connected to the top plate to form an integrated structure. The first stop block extends from the top plate in a direction away from the bottom plate. The valve body further includes a top wall part and a second stop block that are positioned at one end in the height direction of the side wall part. The top wall part and the side wall part are integrally formed. The top wall part is provided with a through hole.

Abstract: According to examples, a hybrid emissive display may include a first ?LED subpixel, a second ?OLED subpixel, and a third ?OLED or ?LED subpixel. The hybrid emissive display may also include at least one digital driving component to digitally drive the first ?LED subpixel, the second ?OLED subpixel, and the third ?OLED or ?LED subpixel. For instance, the subpixels may be driven through pulse width modulation. In this regard, the ?LED subpixels and the ?OLED subpixels in a hybrid emissive display may be driven through at least one digital driving component that may be provided in a common backplane, which may be a CMOS backplane. As a result, for instance, hybrid emissive displays may be fabricated to include blue ?LEDs and red ?OLEDs.

Abstract: A control valve (1), comprising a valve body (10), a valve core (20), a sealing component (41) and a balance sealing block (42). The control valve (1) comprises at least five channels (30). A side wall part (11) is provided with at least five communication ports. The communication ports are in communication with a valve cavity (101). A sealing body part (410) of the sealing component (41) is positioned between the valve core (20) and the side wall part (11). The sealing body part (410) is provided with through holes penetrating through the sealing component (41). In the region of the side wall part (11) that in contact with the sealing body part (410), the number of communication ports is the same as the number of through holes, and the communication ports and the through holes are in communication correspondingly. The balance sealing block (42) is positioned between the side wall part (11) and the valve core (20), and is in contact with the valve core (20).

Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.

Abstract: The invention provides a wind power forecasting method and system based on an asymmetric Laplace distribution. It utilizes the asymmetric Laplace distribution to model the uncertainty of the power forecasts. First, the maximum information coefficient (MIC) is used to characterize the linear and nonlinear relationship between the target and historical power data to select reasonable and optimal inputs. Then, to avoid the information loss, a multi-scale feature fusion module is proposed which combines the features obtained from different convolutional layers of a convolutional neural network (CNN), thereby further enhancing the feature extraction ability of the traditional CNN. Finally, a BiLSTM is used to extract temporal information and forecast the parameters of asymmetric Laplace distribution.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiments, a semiconductor device includes an n-type transistor region and a p-type transistor region. The n-type transistor region includes a first gate stack, a first gate spacer over sidewalls of the first gate stack, an n-type epitaxial feature in a source/drain (S/D) region of the n-type transistor region, and a first metal silicide layer over the n-type epitaxial feature. The p-type transistor region includes a second gate stack, a second gate spacer over sidewalls of the second gate stack, a p-type epitaxial feature in an S/D region of the p-type transistor region, a dopant-containing implant layer over the p-type epitaxial feature, and a second metal silicide layer over the dopant-containing implant layer. The dopant-containing implant layer includes a metallic dopant.

Abstract: A method includes forming a dielectric layer on a semiconductor workpiece, forming a first patterned layer of a first dipole material on the dielectric layer, and performing a first thermal drive-in operation at a first temperature to form a diffusion feature in a first portion of the dielectric layer beneath the first patterned layer. The method also includes forming a second patterned layer of a second dipole material, where a first section of the second patterned layer is on the diffusion feature and a second section of the second patterned layer is offset from the diffusion feature. The method further includes performing a second thermal drive-in operation at a second temperature, where the second temperature is less than the first temperature. The method additionally includes forming a gate electrode layer on the dielectric layer.

Abstract: A display drive circuit includes a plurality of lines of cells. A line of cells of the plurality of lines of cells includes a plurality of pixel drive circuits for a plurality of light emitters, and a data line including an array of data bit storage devices connected serially (e.g., by an array of switches) and configured to shift display data bits along the data line. An output of each data bit storage device of the array of data bit storage devices is connected (e.g., through a switch) to a corresponding pixel drive circuit of the plurality of pixel drive circuits. The pixel drive circuit includes, for example, a digital memory cell, and a switch controlled by a data bit stored in the digital memory cell to turn on or off a drive current to a corresponding light emitter.

Abstract: A rapid detection tool for a coaxial relationship based on a photosensitive material and a detection method using the same are used to detect coaxiality of two through-holes in the same workpiece to be detected. An image processing unit and a control unit are mounted outside a light-shielding box. Light sources, cameras, sensors, and an air cylinder are mounted in the light-shielding box. A photosensitive plate coated with a photosensitive resin is placed between the two holes, and two sides are irradiated by the light sources. Coordinates of centers of circular patterns formed on the photosensitive plate are calculated so that a coaxial relationship between the two holes can be accurately obtained. An output rod of the air cylinder is controlled to extend outward to reject a workpiece to be detected not meeting requirements.

Abstract: A method includes forming a gate structure on a substrate, forming a seal spacer covering a sidewall of the gate structure, forming a sacrificial spacer covering a sidewall of the seal spacer, forming source/drain regions sandwiching a channel region that is under the gate structure, and depositing a contact etch stop layer covering a sidewall of the sacrificial spacer. The method further includes removing the sacrificial spacer to form a trench, wherein the trench exposes a sidewall of the contact etch stop layer and the sidewall of the seal spacer, and depositing an inter-layer dielectric layer, wherein the inter-layer dielectric layer caps the trench, thereby defining an air gap inside the trench.

Abstract: A supervisory computer is used with an energy management system of an electric vehicle. The energy management system includes a battery system having a plurality of battery subsystems. One of the battery subsystems is an abnormal battery subsystem while the remaining battery subsystems are normal battery subsystems. The supervisory computer includes at least one processor and at least one non-transitory computer-readable medium. The processor monitors the remaining state of charge, capacity, and resistance of the battery system and monitor the remaining state of charge and capacity of the abnormal battery subsystem, calculate a low integration bound value, calculate a remaining energy value for all of the normal battery subsystems with respect to the low integration value, calculate a remaining energy value for the abnormal battery subsystem, and summate the remaining energy values of the normal and abnormal battery subsystems to determine a global remaining energy value for the battery system.

Abstract: Disclosed is an occluding stent. The occluding stent includes a distal flange occluding body, a proximal flange occluding body, and a connection portion. External surfaces of the distal flange occluding body and the proximal flange occluding body are both provided with a coating. An external surface of the connection portion is wholly or partially provided with a coating. A first occluding coating is provided between the distal flange occluding body and an inner cavity of the connection portion. The present application overcomes the defect that the existing occluder device for closure of an esophagobronchial fistula is harmful to surrounding tissues, makes the device retractable, enhances the safety of the device, and improves life and treatment of patients. A new safe and effective treatment method for an esophagobronchial fistula is provided.

Abstract: A telescopic device includes a first U-shaped connector with a plurality sets of adjustment slots defined in two sides thereof and arranged along an adjustment direction; a second U-shaped connector defining first through holes in two sides thereof, the second U-shaped connector being inserted into the first U-shaped connector with U-shaped openings thereof opposite to each other to define an accommodating space; a first spring located in the accommodating space and abutting against the first and second U-shaped connectors, respectively; an elastic pin with two ends thereof extending through the first through holes and engaging into one of the plurality sets of adjustment slots; and an initial fixing pin being detachably connected to the first and second U-shaped connectors. A telescopic annular tunnel steel arch includes an upper arch, two lower arches and two telescopic devices connecting two ends of the upper arch to the two lower arches, respectively.