Patents by Inventor Yun Yu

Yun Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTRONIC THERMOMETER
    Publication number: 20160109300
    Abstract: An electronic thermometer includes an external casing unit, a circuit substrate, an electronic switch, a rotating arm unit, a probe unit and a waterproof unit. The external casing unit includes a top cover casing and a bottom cover casing, a receiving space is formed between the top and the bottom cover casings, and the bottom cover casing has a through hole communicated with the receiving space. The waterproof unit includes a first waterproof element and a second waterproof element. The first waterproof element is disposed between the top cover casing and the bottom cover casing and around the receiving space for preventing water vapor from entering the receiving space through the external casing unit, and the second waterproof element is disposed inside the through hole of the bottom cover casing for preventing water vapor from entering the receiving space through the through hole.
    Type: Application
    Filed: October 15, 2014
    Publication date: April 21, 2016
    Inventors: TSENG LUNG LIN, SHAO-YUN YU
  • ELECTRONIC DEVICE AND METHOD FOR DETECTING PLUG TYPE OF AUDIO DEVICE INSERTED INTO ELECTRONIC DEVICE
    Publication number: 20160105747
    Abstract: An electronic device for determining a type of an audio device plugged into the electronic device includes an audio port configured to receive a plug of the audio device, a plug detection system configured to determine a plug type of the audio device from the audio port, and a display configured to display the plug type. The plug type includes a three-section plug and a four-section earphone plug. The three-section plug is either a three-section earphone plug or a three-section external speaker plug.
    Type: Application
    Filed: September 24, 2015
    Publication date: April 14, 2016
    Inventors: CHUN-WEI CHENG, CHAO-YUN YU
  • 3D transistor channel mobility enhancement
    Patent number: 9275907
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: March 1, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Kevin K. Chan, Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Min Yang, Qi Zhang
  • COVER FOR BICYCLE SADDLES AND A METHOD FOR MAKING IT
    Publication number: 20160052579
    Abstract: A cover for a bicycle saddle comprises a basic layer and a first auxiliary layer. The basic layer is made of a first plastic material and has a top surface with a first friction factor. The first auxiliary layer is made of a second plastic material with a second friction factor and is directly disposed on a predetermined area of the top surface of the basic layer. The second friction factor is smaller than the first friction factor. A method is provided for making a cover as above.
    Type: Application
    Filed: August 19, 2015
    Publication date: February 25, 2016
    Inventor: Tsai-Yun YU
  • Method and system for reminding reader of fatigue in reading while using electronic device
    Patent number: 9269257
    Abstract: The method and system for reminding readers of fatigue in reading while using electronic devices are revealed. First use a reading speed calculation module to detect user's reading speed within a period of time when the user is using an electronic with a display to read. The reading speed is related to pages being turned or the amount of words being read. Then a fatigue-in-reading reminder module is activated by the reading speed calculation module when the user's reading speed falls within a specific range so as to remind the user by pop-up windows, sounds, flash light or vibration at the proper time and provide the user certain corresponding measures he/she should take. Thereby there is no need to use additional equipment for preventing users from becoming more fatigue and healthy vision is accomplished at lower cost with higher efficiency.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: February 23, 2016
    Assignee: National Cheng Kung University
    Inventors: Yueh-Min Huang, Chia-Ju Liu, Chia-Hung Lai, Yen-Ning Su, Chia-Cheng Hsu, Yu-Cheng Chien, Tsung-Ho Liang, Tzu-Chien Liu, Fu-Yun Yu, Yu-Lin Jeng
  • FLIGHT CONTROL FOR FLIGHT-RESTRICTED REGIONS
    Publication number: 20150339931
    Abstract: Systems, methods, and devices are provided for providing flight response to flight-restricted regions. The location of an unmanned aerial vehicle (UAV) may be compared with a location of a flight-restricted region. If needed a flight-response measure may be taken by the UAV to prevent the UAV from flying in a no-fly zone. Different flight-response measures may be taken based on the distance between the UAV and the flight-restricted region and the rules of a jurisdiction within which the UAV falls.
    Type: Application
    Filed: July 31, 2015
    Publication date: November 26, 2015
    Inventors: Yun Yu, Canlong Lin, Xi Chen, Mingyu Wang, Tao Wang, Jianyu Song
  • Three-phase, multi-way vacuum interrupter switchgear with internal ground switches
    Patent number: 9136077
    Abstract: A three-phase vacuum interrupter switch assembly for power distribution systems comprises an outer case having at least one window and containing a plurality of component assemblies. The case interior is preferably free of oil and/or SF6 gas. Each component assembly comprises three internal disconnect switch assemblies, three vacuum interrupter bottle switch assemblies and three ground switch assemblies. Each vacuum interrupter bottle switch is coupled in electrical series with a corresponding internal disconnect switch assembly. Because the open/closed state of a bottle switch is not directly observable owing to its sealed interior, a direct visible indication of the state of the three-phase vacuum interrupter switch assembly is provided by a visually detectable contact rod of the corresponding internal disconnect switch that is visible through the case window.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: September 15, 2015
    Assignee: Impact Power, Inc.
    Inventors: Kuang-Chien Hu, Hsiu-Yun Yu
  • Method of replacement source/drain for 3D CMOS transistors
    Patent number: 9105741
    Abstract: A method of forming a semiconductor structure may include forming at least one fin and forming, over a first portion of the at least one fin structure, a gate. Gate spacers may be formed on the sidewalls of the gate, whereby the forming of the spacers creates recessed regions adjacent the sidewalls of the at least one fin. A first epitaxial region is formed that covers both one of the recessed regions and a second portion of the at least one fin, such that the second portion extends outwardly from one of the gate spacers. A first epitaxial layer is formed within the one of the recessed regions by etching the first epitaxial region and the second portion of the at least one fin. A second epitaxial region is formed at a location adjacent one of the spacers and over the first epitaxial layer within one of the recessed regions.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: August 11, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Jinghong Li, Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Qingyun Yang
  • SHELL FOR BICYCLE SADDLE
    Publication number: 20150175228
    Abstract: A shell for a bicycle saddle has a groove opened through top and bottom surfaces thereof, a narrow anterior portion having a front edge, and a wide posterior portion having a rear edge and divided by an imaginary longitudinal axis passing through the front and rear edges and the groove into left and right regions where two sockets are located, respectively. The groove has a longitudinal section extending along the axis, and a transverse section extending from a rear end of the longitudinal section to the left and right regions so as to form two elastic wings adjacent to the groove. Each socket has a connecting sheet and an insertion block and extends from rear and lateral edges of the wide posterior portion to a position under the bottom surface to form a space therebetween. As a result, the shell has great elasticity and structural strength.
    Type: Application
    Filed: December 15, 2014
    Publication date: June 25, 2015
    Inventor: Tsai-Yun YU
  • Frame and backlight module having same
    Patent number: 9046629
    Abstract: A frame for a backlight module includes a first strip, a second strip, a third strip, and a fourth strip connected end to end in sequence to cooperatively enclose an interior of the frame. The first strip, the second strip, the third strip, and the fourth strip each include an inner surface facing the interior of the frame. A number of microdots are formed on the inner surface.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: June 2, 2015
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventor: Yun-Yu Chou
  • 3D transistor channel mobility enhancement
    Patent number: 9023697
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: May 5, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Min Yang, Qi Zhang
  • Vacuum-lifting device
    Patent number: 9016740
    Abstract: A vacuum-lifting device of variable configurations includes a first slat element, a second slat element, and four suction members. The first slat element is detachably fixed to the second slat element, and the first slat element intersects with the second slat element defining an intersection. A first slot is defined in the first slat element and a second slot is defined in the second slat element. Two of the four suction members are translatably secured in the first slot. The other two of the four suction members are translatably secured in the second slot.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: April 28, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventor: Yun-Yu Chou
  • OPTICAL LENS AND LIGHT SOURCE MODULE HAVING THE SAME
    Publication number: 20150103534
    Abstract: A light source module includes a light source, an optical lens facing the light source, and a plurality of diffusing particles formed in the optical lens. The optical lens includes a light incident face facing the light source, a light emitting face opposite to the light incident face, and a connecting face connecting the light incident face and the light emitting face. The connecting face is planar. The light emitting face includes a lateral face extending upwardly from an outer periphery of the connecting face and a top face located above the light incident face. The top face of the light emitting face comprises a first curved facet and a second curved facet surrounding and extending outwardly from the first curved facet.
    Type: Application
    Filed: October 28, 2013
    Publication date: April 16, 2015
    Applicant: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: CHAU-JIN HU, KUN-CHAN WU, YUN-YU CHOU
  • MOCKUP FOR FACILITATING DECISION OF SPACIAL PARAMETERS OF A DIRECT-TYPE LED BACKLIGHT MODULE
    Publication number: 20150098231
    Abstract: A mockup of a direct-type LED backlight module includes a base, a plurality of sliding bars slideably received in the base, a plurality of sliding plates slideably mounted the sliding bars, a supporting board positioned above the base and a plurality of connection elements fixing the supporting board to the base. A distance between the supporting board and the base is adjustable by manipulating the connection elements. A middle of an upper surface of the base is depressed downwardly to define a chamber, and the chamber is surrounded by a bottom surface, two opposite first lateral surfaces and two opposite second lateral surfaces. Each sliding bar is received in the chamber. Each sliding plate includes a holding plate on which an LED light source is mounted. A diffusion plate is mounted on the supporting board.
    Type: Application
    Filed: December 16, 2013
    Publication date: April 9, 2015
    Applicant: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventor: YUN-YU CHOU
  • SELECTIVE PASSIVATION OF VIAS
    Publication number: 20150076695
    Abstract: A method of forming an integrated circuit structure includes forming a cap layer above a first ILD layer of a first metal level, the first ILD layer includes a recess filled with a first conductive material to form a first interconnect structure. Next, a second ILD layer is formed above the cap layer and a via is formed within the second ILD layer as a second interconnect structure of a second metal level. The via is aligned with the first interconnect structure. Subsequently, a portion of the cap layer is removed to extend the via to expose a top portion of the first conductive material then a passivation cap is selectively formed at a bottom portion of the via in the second ILD layer and the passivation cap contacting the top portion of the first conductive material. The passivation cap includes a metal alloy to form an interface between the bottom portion of the via and the first conductive material.
    Type: Application
    Filed: September 16, 2013
    Publication date: March 19, 2015
    Applicants: STMICROELECTRONICS, INC., International Business Machines Corporation
    Inventors: Tien-Jen Cheng, Lawrence A. Clevenger, Terence L. Kane, Carl J. Radens, Andrew H. Simon, Yun-Yu Wang, Yiheng Xu, John Zhang
  • Light emitting diode package and method for manufacturing the same
    Patent number: 8975651
    Abstract: An LED package includes a lens, an LED chip securely received and engaged in the lens, and a base with an electrode assembly thereon. A bottom surface of the LED chip is bare. The lens is mounted on the base and the bottom surface of the LED chip electrically and mechanically connects with the electrode assembly.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: March 10, 2015
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Yun-Yu Chou, Ko-Hua Chen
  • VACUUM-LIFTING DEVICE
    Publication number: 20150061308
    Abstract: A vacuum-lifting device of variable configurations includes a first slat element, a second slat element, and four suction members. The first slat element is detachably fixed to the second slat element, and the first slat element intersects with the second slat element defining an intersection. A first slot is defined in the first slat element and a second slot is defined in the second slat element. Two of the four suction members are translatably secured in the first slot. The other two of the four suction members are translatably secured in the second slot.
    Type: Application
    Filed: August 28, 2014
    Publication date: March 5, 2015
    Inventor: YUN-YU CHOU
  • 3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
    Publication number: 20150041911
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Application
    Filed: August 8, 2013
    Publication date: February 12, 2015
    Applicants: GLOBALFOUNDRIES, INC., International Business Machines Corporation
    Inventors: KEVIN K. CHAN, DAE-GYU PARK, XINHUI WANG, YUN-YU WANG, MIN YANG, QI ZHANG
  • 3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
    Publication number: 20150041858
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Application
    Filed: October 24, 2014
    Publication date: February 12, 2015
    Inventors: KEVIN K. CHAN, DAE-GYU PARK, XINHUI WANG, YUN-YU WANG, MIN YANG, QI ZHANG
  • Saddle
    Patent number: D728952
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: May 12, 2015
    Assignee: Velo Enterprise Co., Ltd.
    Inventor: Tsai-Yun Yu