Abstract: A method for fabricating an image sensor device is disclosed. The method for fabricating an image sensor device comprises forming a photosensitive layer on a substrate. The photosensitive layer is exposed through a first photomask to form an exposed portion and an unexposed portion. The unexposed portion is partially exposed through a second photomask to form a trimmed part, wherein the second photomask comprise a first segment and a second segment that has a transmittance greater than that of the first segment. The trimmed part is removed to form photosensitive structures. The photosensitive structures are reflowed to form a first microlens and a second microlens having different heights.

Abstract: A handlebar grip includes an outer tube, an inner tube extending inside the outer tube, and an annular space defined between the inner and outer tubes for receiving therein a bicycle handlebar. The inner tube has guide slots and an inner guide surface having a gradually decreased diameter. Through a threadedly connecting structure a wedge-shaped member is threaded with a bolt extending into the outer tube in a way that ribs of the wedge-shaped member are inserted in the guide slots of the inner tube respectively. When the bolt is gradually tightened up to drive the wedge-shaped member to move into the inner tube, a circumferential surface of the wedge-shaped member, which is configured to be matched with the inner guide surface of the inner tube, will squeeze the inner tube to expand outwardly so as to clamp the bicycle handlebar between the inner and outer tubes.

Abstract: A group keypad structure in compliance with a standard keyboard installation includes group keypads corresponding to characters of a standard keyboard input method; for example, the structure includes ten group keypads installed from left to right on a base, and the ten group keypads include characters of “Q, A, Z”, “W, S, X”, “E, D, C”, “R, F, V”, “T, G, B”, “Y, H, N”, “U, J, M”, “I, K, ,”, “O, L, .” and “P, ;, /” respectively, and further includes ten numeric characters “1˜0”, so as to achieve the effects of reducing the area of a keyboard, shortening the moving distance of a user's fingers, providing an easy and convenient carry, complying with the user's using habit, and improving the input speed.

Abstract: A method of fabricating a device using a sequence of annealing processes is provided. More particularly, a logic NFET device fabricated using a low temperature anneal to eliminate dislocation defects, method of fabricating the NFET device and design structure is shown and described. The method includes forming a stress liner over a gate structure and subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force in single crystalline silicon near the gate structure as a way to memorized the stress effort. The method further includes stripping the stress liner from the gate structure and performing an activation anneal at high temperature on device.

Abstract: A method of forming a semiconductor device includes implanting an amorphizing species into a crystalline semiconductor substrate, the substrate having a transistor gate structure formed thereupon. Carbon is implanted into amorphized regions of the substrate, with specific implant conditions tailored such that the peak concentration of carbon species coincides with the end of the stacking faults, where the stacking faults are created during the recrystallization anneal. The implanted carbon pins partial dislocations so as to prevent the dislocations from disassociating from the end of the stacking faults and moving to a region in the substrate directly below the transistor gate structure. This removes the defects, which cause device leakage fail.

Abstract: A method of fabricating a device using a sequence of annealing processes is provided. More particularly, a logic NFET device fabricated using a low temperature anneal to eliminate dislocation defects, method of fabricating the NFET device and design structure is shown and described. The method includes forming a stress liner over a gate structure and subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force in single crystalline silicon near the gate structure as a way to memorized the stress effort. The method further includes stripping the stress liner from the gate structure and performing an activation anneal at high temperature on device.

Abstract: In a method of a touch panel determining multi-touch, the touch panel can determine if a sensing channel having a local minimum of a sensing value is the last sensing channel having the sensing value, or determine if sensing channels having the sensing value larger than a threshold generated according to a maximum are successive sensing channels, so as to determine the number of touch points on the touch panel. In addition, the touch panel can find a first local maximum and a second local maximum from the sensing values of the sensing channels, and compare the first local maximum and the second local maximum with a first reference and a second reference, so as to confirm the number of touch points on the touch panel.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: A wrist exerciser with a handle and multiple hold positions includes a first exercise ball body and a handle. The first exercise ball body has a first opening, a rotor, and a first hold position for driving the rotor to rotate. The first opening is disposed at a side of the first exercise ball body. The rotor is disposed inside the first exercise ball body. The handle is connected to the other side of the first exercise ball body where the first opening is disposed. The handle is coaxially corresponding to the first opening, and has a second hold position for driving the rotor to rotate, so as to provide multiple hold modes for a user to carry out wrist exercise modes of different postures, thereby increasing interests and enhancing comprehensiveness of forearm muscle exercises.

Abstract: An interconnect structure having improved electromigration (EM) reliability is provided. The inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by incorporating a EM preventing liner at least partially within a metal interconnect. In one embodiment, a “U-shaped” EM preventing liner is provided that abuts a diffusion barrier that separates conductive material from the dielectric material. In another embodiment, a space is located between the “U-shaped” EM preventing liner and the diffusion barrier. In yet another embodiment, a horizontal EM liner that abuts the diffusion barrier is provided. In yet a further embodiment, a space exists between the horizontal EM liner and the diffusion barrier.

Abstract: This invention provides a body fluid detection method by using surface enhanced Raman spectroscopy. In this method, some biological macromolecules in body fluid samples could be separated with membrane electrophoresis technique firstly. Next, samples are cut off along with the substrates and touched with glacial acetic acid. Transparent colloid formed while incubating. Then add enhancing substrates and continue to incubate and stir. When solid impurities precipitated, stop incubating and stand for layering. In the end, take upper layer resulted to be tested using SERS detection method and build SERS database. This invention successfully eliminated disturbance of other complex components on the SERS detection of protein, DNA and RNA. High quality SERS spectrum obtained is beneficial to the analysis and process of SERS spectrum. Thus body fluid can be differentiated by comparing body fluid SERS spectrum belonging to the healthy people and patients.

Abstract: A portable electronic device and an operation method using the portable electronic device include presetting function modes applicable to specific user interfaces of the portable electronic device, and presetting operations in each of the function modes and a command corresponding to each of the operations. Signals are detected from a first and a second proximity sensors of the portable electronic device, and a time length of each signal is calculated. A command corresponding to a current operation is executed if the current operation is determined to accord with one of the preset operations according to the detected signals and the time length.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An electronic device and a method enables an unlock operation of the electronic device. When the electronic device in a lock state is moved for the unlock operation, the electronic device receives a three-axis acceleration vector of the electronic device from an accelerometer. The electronic device analyzes three movement directions of the electronic device along three coordinate axes. The electronic device determines whether the analyzed three movement directions are the same as three predetermined movement directions along the three coordinate axes. If the analyzed three movement directions are the same as the three predetermined movement directions along the three coordinate axes, the electronic device is changed from the lock state to an unlock state.

Abstract: A method of failure detection of an integrated circuit (IC) layout includes determining a critical path distance between a first geometric feature of the IC layout and a second geometric feature of the IC layout; and comparing the determined critical path distance to a defined minimum critical path distance between the first and second geometric features, wherein the defined minimum critical path distance corresponds to a desired electrical property of the IC layout, independent of any geometric-based ground rule minimum distance for the IC layout; identifying any determined critical path distances that are less than the defined minimum critical path distance as a design violation; and modifying the IC layout by eliminating the identified design violations.