Abstract: A method to form a voltage sensitive resistor (VSR) read only memory (ROM) device on a semiconductor substrate having a semiconductor device including depositing by chemical vapor deposition (CVD) a titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by at least an order of 102 when a predetermined voltage and current are applied to the VSR; and applying a predetermined voltage and current so as to make the CVD titanium nitride less resistive by at least an order of 102.

Abstract: This invention is related to a seizure prediction method with an on-line retraining scheme. The seizure prediction method can self-learn the preictal and interictal waveforms of patients suffering from seizure with long-term brain signal monitoring, and can also distinguish the preictal waveforms from the interictal waveforms in real time to efficiently predict seizure. This invention also provides a seizure prediction module and a seizure prediction device to carry out the seizure prediction method.

Abstract: A base for a bicycle saddle comprises a load-bearing panel body and a rim surrounding the panel body. The rim includes a plurality of sections. One of said sections has a strip-shaped opening so that the section is more flexible than any other place of the rim.

Abstract: This invention provides a body fluid detection method by using surface enhanced Raman spectroscopy. In this method, some biological macromolecules in body fluid samples could be separated with membrane electrophoresis technique firstly. Next, samples are cut off along with the substrates and touched with glacial acetic acid. Transparent colloid formed while incubating. Then add enhancing substrates and continue to incubate and stir. When solid impurities precipitated, stop incubating and stand for layering. In the end, take upper layer resulted to be tested using SERS detection method and build SERS database. This invention successfully eliminated disturbance of other complex components on the SERS detection of protein, DNA and RNA. High quality SERS spectrum obtained is beneficial to the analysis and process of SERS spectrum. Thus body fluid can be differentiated by comparing body fluid SERS spectrum belonging to the healthy people and patients.

Abstract: A method of fabricating a device using a sequence of annealing processes is provided. More particularly, a logic NFET device fabricated using a low temperature anneal to eliminate dislocation defects, method of fabricating the NFET device and design structure is shown and described. The method includes forming a stress liner over a gate structure and subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force in single crystalline silicon near the gate structure as a way to memorized the stress effort. The method further includes stripping the stress liner from the gate structure and performing an activation anneal at high temperature on device.

Abstract: Disclosed is a voltage sensitive resistor (VSR) write once (WO) read only memory (ROM) device which includes a semiconductor device and a VSR connected to the semiconductor device. The VSR WO ROM device is a write once read only device. The VSR includes a CVD titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by an order of 102, more preferably 103 and most preferably 104 when a predetermined voltage and current are applied to the VSR. A plurality of the VSR WO ROM devices may be arranged to form a high density programmable logic circuit in a 3-D stack. Also disclosed are methods to form the VSR WO ROM device.

Abstract: Disclosed are a damascene and dual damascene processes both of which incorporate the use of a release layer to remove trace amounts of residual material between metal interconnect lines. The release layer is deposited onto a dielectric layer. The release layer comprises an organic material, a dielectric material, a metal or a metal nitride. Trenches are etched into the dielectric layer. The trenches are lined with a liner and filled with a conductor. The conductor and liner materials are polished off the release layer. However, trace amounts of the residual material may remain. The release layer is removed (e.g., by an appropriate solvent or wet etching process) to remove the residual material. If the trench is formed such that the release layer overlaps the walls of the trench, then when the release layer is removed another dielectric layer can be deposited that reinforces the corners around the top of the metal interconnect line.

Abstract: A mold includes a first core and a second core matched with the first core. The first core includes a first die parting surface defining the molding cavity. The second core includes a second die parting surface facing the first die parting surface. A plurality of first exhaust grooves are defined in the first die parting surface. A plurality of transverse second exhaust grooves are defined in the second die parting surface. When the mold is closed, the first core and the second core cooperatively form at least one molding space. The first exhaust grooves are machining marks formed during the machining of the first core. The second exhaust grooves are machining marks formed during the machining of the second core.

Abstract: A measuring fixture is used with a slide caliper for measuring dimensions of workpiece; the measuring fixture includes a first measuring portion and a second measuring portion. The first measuring portion defines a plurality of first measuring grooves thereon. The second measuring portion defines a plurality of second measuring grooves thereon corresponding to the plurality of first measuring grooves respectively. The measuring fixture defines a receiving portion thereon between the first and the second measuring portions. A pair of measuring jaws of the slide caliper are capable of sliding and receiving in a first measuring groove and a corresponding second measuring groove respectively to measure linear dimension or size of workpiece received in the receiving portion.

Abstract: A wrist exerciser with a handle and multiple hold positions includes a first exercise ball body and a handle. The first exercise ball body has a first opening, a rotor, and a first hold position for driving the rotor to rotate. The first opening is disposed at a side of the first exercise ball body. The rotor is disposed inside the first exercise ball body. The handle is connected to the other side of the first exercise ball body where the first opening is disposed. The handle is coaxially corresponding to the first opening, and has a second hold position for driving the rotor to rotate, so as to provide multiple hold modes for a user to carry out wrist exercise modes of different postures, thereby increasing interests and enhancing comprehensiveness of forearm muscle exercises.

Abstract: A mobile electronic device protective cover consists of hinged front panel and rear panel. The rear panel includes a holder portion adapted for holding a mobile electronic device, for example, tablet PC, two pop-up type flat speaker sleeves receivably fastened to the holder portion at two opposite lateral sides for holding one respective speaker driver, a connection portion bonded to the back wall of the holder portion, a box accommodating therein an acoustic transducer module, a subwoofer and a rechargeable power source, a support portion adapted for supporting the holder portion on the front panel in a standing position, and a folding line connected between the connection portion and the support portion.

Abstract: A frame of a backlight module includes a first side bar, a second side bar, a third side bar and a fourth side bar. The first side bar, the second side bar, the third side bar and the fourth side bar are connected end to end. The frame includes two contacting portions. One of the contacting portions is positioned at a corner of the first side bar and the second side bar, and the other one of the contacting portions is positioned at another corner of the first side bar and the fourth side bar.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

Abstract: The mode switching method of multi-function touch panel comprises a touch panel receiving a touch signal and identifying whether the touch signal is a multi-touch signal; if the touch signal is a multi-touch signal, the multi-function touch panel performing multi-touch mode; if the touch signal is not a multi-touch signal, the multi-function touch panel is going to determine whether performing functional mode switch; if determining to perform functional mode switch, the multi-function touch panel will chose to enter keyboard set mode or transform gesture mode; if determined not to perform functional mode switch, the multi-function touch panel will check the touch signal belong to keyboard mode, mouse mode, or other mode, and respectively perform identifying keyboard input, mouse mode, or controlling the single-touch gesture detective and switch mode.

Abstract: A method of forming a semiconductor device includes implanting an amorphizing species into a crystalline semiconductor substrate, the substrate having a transistor gate structure formed thereupon. Carbon is implanted into amorphized regions of the substrate, with specific implant conditions tailored such that the peak concentration of carbon species coincides with the end of the stacking faults, where the stacking faults are created during the recrystallization anneal. The implanted carbon pins partial dislocations so as to prevent the dislocations from disassociating from the end of the stacking faults and moving to a region in the substrate directly below the transistor gate structure. This removes the defects, which cause device leakage fail.

Abstract: A housing of a wrist exercising device includes a first cover, a second cover and a fixing ring. The first cover has a first opening end and a first joining portion. The first joining portion includes a first annular bottom wall extending outside from the first opening end and a first annular side wall surrounding the first annular bottom wall. The second cover has a second opening end and a second joining portion. The second joining portion includes a second annular bottom wall extending outside from the second opening end and a second annular side wall surrounding the second annular bottom wall. The fixing ring wraps the first joining portion and the second joining portion which are joined with each other. A wrist exercising device using the housing is also provided.

Abstract: A method of detecting low-probability defects in large transistor arrays (such as large arrays of SRAM cells), where the defects manifest themselves as asymmetrical leakage in a transistor (such as a pulldown nFET in an SRAM cell). These defects are detected by creating one or more test arrays, identical in all regards to the large transistor arrays up until the contact and metallization layers. Leakage is measured by applying an appropriate off-state voltage (e.g., 0V) by a common connection to all of the gates of the transistors in the test array, then measuring the aggregate drain/source leakage current, both forward and reverse (e.g., first grounded source and positively biased drain, then grounded drain and positively biased source) comparing the difference between the two leakage current measurements.