Abstract: A method of reducing the contact resistance of metal suicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g.

Abstract: A subscriber conversion system determines at least one code for an existing subscriber of a first wireless communications system to be converted to a second wireless communications system. When the existing subscriber obtains a wireless unit to be used in the second wireless communications system, the conversion system uses the at least one code provided to the existing subscriber to link existing subscriber information from the first wireless communications system to information associated with wireless unit for the second communications system, thereby improving the efficiency of the conversion process. For example, if a service provider wishes to convert from GSM to CDMA, the service provider can provide a secret code and an identification number, such as a directory number (DN), as the codes to the existing GSM subscriber. The subscriber obtains a CDMA wireless unit and commences an activation process to activate the CDMA wireless unit.

Abstract: A bicycle saddle comprises a main body, two deflection members, a pliable support, and a bracing frame. The main body has a front portion and a rear portion wider than the front portion. The deflection members are fastened pivotally at the top end thereof with two opposite sides of the underside of the rear portion of the main body such that the axial direction of the pivot is corresponding to the front-rear direction of the main body, and that the bottom end of each deflection member swivels. The pliable support is fastened pivotally at both ends thereof with the bottom ends of the deflection members such that the top of the pliable support and the underside of the main body form therebetween a cushioning space. When the pliable support is exerted on by an external force, the pliable support is deformed.

Abstract: The present invention provides a method of tracing a shopping path of a consumer. The method enables the consumer to directly return back to any transaction-occurred shopping web page. The method involves: establishing a shopping path record to record all of the uniform resource locators (URLs) of transaction-occurred shopping web pages of the consumer; providing a database for storing the shopping path record of the consumer; displaying a shopping path record list to enable the consumer to choose a recorded item in the shopping web page; receiving a request from the consumer for returning back to one transaction-occurred recorded shopping web page; and linking to the chosen recorded shopping web page.

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

Abstract: A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

Abstract: A method of reducing contact resistance of metal silicides to a silicon-containing substrate is provided. The method includes first forming a metal germanium layer over a silicon-containing substrate. An optionally oxygen barrier layer may be formed over the metal germanium layer. Next, the structure containing the metal germanium layer is annealed at a temperature effective in converting at least a portion of the metal germanium layer into a substantially non-etchable metal silicide layer, while forming a Si-Ge interlayer between the substrate and the silicide layer. After annealing, the optional oxygen barrier layer and any remaining metal germanium layer is removed from the substrate.

Abstract: A method of substantially reducing Si consumption and bridging during metal silicide contact formation comprising the steps of: (a) forming a metal silicon alloy layer over a silicon-containing substrate containing an electronic device to be electrically contacted, said silicon in said alloy layer being less than about 30 atomic % and said metal is Co, Ni or mixtures thereof; (b) annealing said metal silicon alloy layer at a temperature of from about 300° to about 500° C. so as to form a metal rich silicide layer that is substantially non-etchable compared to said metal silicon alloy or pure metal; (c) selectively removing any non-reacted metal silicon alloy over non-silicon regions; and (d) annealing said metal rich silicide layer under conditions effective in forming a metal silicide phase that is in its lowest resistance phase. An optional oxygen barrier layer may be formed over the metal silicon alloy layer prior to annealing step (b).

Abstract: A document size detection device accurately detects document size while reducing the number of document size detection sensors required. The device includes: a document detection sensor positioned at a first location on a document insertion line across a document feed path, the first location being positioned within the width of a first-sized document; a document position sensor positioned at a second location on a scan stand-by line across the document feed path, the second location being positioned within the width of the first-sized document; a document size detection sensor positioned at a third location between the document insertion line and the scan stand-by line, and within an area formed between lateral boundaries of the first-sized document and a second-sized document; a document feed roller for feeding the document; and a controller for driving the document feed roller to feed the document up to the scan stand-by line if the document detection sensor detects the document.

Abstract: A damascene structure, such as a conductive line or via, having a liner with a roughened surface between the substrate and the conductive fill and, preferably, a smooth bottom. The substrate underneath the liner may also have a roughened sidewall and smooth bottom. Such a structure provides enhanced adhesion between one or more layers of the damascene structure. The damascene structure may be manufactured by applying a photoresist over a substrate top surface, exposing the photoresist under conditions that create a standing wave in the resist, and developing the photoresist to provide a pattern having the desired roughened or serrated outline. The pattern is transferred into the substrate, the liner is applied over the substrate bottom and sidewalls, and the liner is filled with conductive material. A roughened liner surface may be achieved by applying a partial layer of liner material over the substrate, removing a portion of the partial layer, and repeating the application and removal steps.

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

Abstract: Call processing overload at a base station of a cellular wireless network is controlled by monitoring a level of call processing at the base station, and reducing a present handoff rate for active users when the call processing level exceeds a first threshold less than a maximum call processing capacity. When the call processing level at the base station exceeds a second threshold greater than the first threshold, a present rate of call originations or terminations is reduced while further reducing the handoff rate.

Abstract: A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.

Abstract: Reduced scale structures of improved reliability and/or increased composition options are enabled by the creation and use of quantum conductive recrystallization barrier layers. The quantum conductive layers are preferably used in trench capacitors to act as recrystallization barriers.

Abstract: A process for forming a conductive contact having a flat interface. A layer containing niobium and titanium is deposited on a silicon substrate and the resulting structure is annealed in a nitrogen-containing atmosphere at about 500° C. to about 700° C. By this process, a flatter interface between silicide and silicon, which is less likely to cause junction leakage, is formed on annealing. The step of annealing also produces a more uniform bilayer, which is a better barrier against tungsten encroachment during subsequent tungsten deposition. Larger silicide grains are also formed so that fewer grain boundaries are produced, reducing metal diffusion in grain boundaries. The process can be used to form contacts for very small devices and shallow junctions, such as are required for current and future semiconductor devices.

Abstract: A male type USB (universal serial bus) connector includes a substantially rectangular connector body, a cable connected to the connector body and extended out of a hole at a rear side wall of the connector body, two symmetrical insulative shells fastened together and covered on the rear side wall and two opposite lateral side walls of the connector body and a part of the cable to secure the cable in place, and an insulative cap fastened to the connector body and the insulative shells at a front side, the cap having a center coupling hole, which receives a front side wall of the connector body, and a backward coupling flange coupled to the insulative shells.

Abstract: A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.

Abstract: A bicycle saddle has a base which is formed of a main body and an elastic body. The main body is provided with a shock-absorbing area which is in turn provided with a plurality of receiving spaces, and partitions located between the receiving spaces. Each receiving space has a shoulder portion located along the periphery thereof such that the shoulder portion is beneath the level of the top of the shock-absorbing area. The partitions and the shoulder portions are level with each other and are provided with a plurality of through holes. The elastic body is filled in the shock-absorbing area by molding such that the elastic body is anchored securely in the through holes and that the elastic body covers the shoulder portions, and the top and the bottom of the partitions.

Abstract: A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.