Patents by Inventor Yun Yu

Yun Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electron holography method
    Publication number: 20040195506
    Abstract: An inline electron holograph method for observing a specimen with a transmission electron microscope having an electron gun, a collimating lens system, two spaced objective lenses, a biprism, and an imaging means comprises the steps of: with the first objective lens forming a virtual image of a portion of the specimen; with the second objective lens focussing the virtual image at an intermediate image plane to form an intermediate image; and projecting the intermediate image onto the imaging means.
    Type: Application
    Filed: January 9, 2004
    Publication date: October 7, 2004
    Applicants: IBM Corporation, JEOL USA, Inc.
    Inventors: Yun-Yu Wang, Masahiro Kawasaki, John Bruley, Anthony G. Domenicucci, Michael A. Gribelyuk, John G. Gaudiello
  • Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
    Publication number: 20040195695
    Abstract: A method of reducing the contact resistance of metal suicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g.
    Type: Application
    Filed: April 19, 2004
    Publication date: October 7, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Cyril Cabral,, Roy Arthur Carruthers, James McKell Edwin Harper, Christian Lavoie, Ronnen Andrew Roy, Yun Yu Wang
  • Bilayer HDP CVD / PE CVD cap in advanced BEOL interconnect structures and method thereof
    Publication number: 20040173907
    Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.
    Type: Application
    Filed: March 23, 2004
    Publication date: September 9, 2004
    Inventors: Tze-Chiang Chen, Brett H. Engel, John A. Fitzsimmons, Terence Kane, Naftall E. Lustig, Ann McDonald, Vincent McGahay, Soon-Cheon Seo, Anthony K. Stamper, Yun Yu Wang, Erdem Kaltalioglu
  • Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
    Patent number: 6753606
    Abstract: A method of reducing the contact resistance of metal silicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: June 22, 2004
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Roy Arthur Carruthers, James McKell Edwin Harper, Christian Lavoie, Ronnen Andrew Roy, Yun Yu Wang
  • Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof
    Publication number: 20040115873
    Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.
    Type: Application
    Filed: August 28, 2003
    Publication date: June 17, 2004
    Inventors: Tze-Chiang Chen, Brett H. Engel, John A. Fitzsimmons, Terence Kane, Naftall E. Lustig, Ann McDonald, Vincent McGahay, Soon-Cheon Seo, Anthony K. Stamper, Yun Yu Wang, Erdem Kaltalioglu
  • Method for depositing a metal layer on a semiconductor interconnect structure having a capping layer
    Publication number: 20040115921
    Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.
    Type: Application
    Filed: December 11, 2002
    Publication date: June 17, 2004
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, Infineon Technologies North America Corp.
    Inventors: Larry Clevenger, Timothy Joseph Dalton, Mark Hoinkis, Staffen K. Kaldor, Kaushik Kumar, Douglas C. La Tulipe, Soon-Cheon Seo, Andrew Herbert Simon, Yun-Yu Wang, Chih-Chao Yang, Haining Yang
  • Method to enhance epitaxial regrowth in amorphous silicon contacts
    Patent number: 6740568
    Abstract: In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: May 25, 2004
    Assignees: Infineon Technologies AG, International Business Machines Corporation
    Inventors: Yun Yu Wang, Johnathan Faltermeier, Colleen M. Snavely, Michael Maldei, Michael M. Iwatake, David M. Dobuzinsky, Ravikumar Ramachandran, Viraj Y. Sardesai, Philip L. Flaitz, Lisa Y. Ninomiya
  • Base of bicycle saddle
    Patent number: 6739656
    Abstract: A base of a bicycle saddle comprises a main body made of a rigid plastic material. The main body is provided with at least one receiving space corresponding in location to the sitting area of bicyclist and a plurality of supporting bars suspended in the receiving space and defining a plurality of hollows. The base further comprises an elastic body made of a plastic material having a hardness smaller than the hardness of the plastic material of which the main body is made. The elastic body is filled in the receiving space by molding such that the hollows are enclosed by the elastic body, and the elastic body is firmly connected to the main body.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: May 25, 2004
    Inventor: Tsai-Yun Yu
  • Method and structure for controlling the interface roughness of cobalt disilicide
    Publication number: 20040087160
    Abstract: A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.
    Type: Application
    Filed: October 22, 2003
    Publication date: May 6, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Paul David Agnello, Cyril Cabral, Roy Arthur Carruthers, James McKell Edwin Harper, Christian Lavoie, Kirk David Peterson, Robert Joseph Purtell, Ronnen Andrew Roy, Jean Louise Jordan-Sweet, Yun Yu Wang
  • Perforation device
    Patent number: 6719679
    Abstract: A perforation device for making roll of plastic bag with an opening and a perforation line on each bag, comprising a cutting unit, an anvil unit and a expanding board, wherein, the cutting unit involves a main unit whereto are fitted with a toothed blade and a specified number of compressing blocks, the expanding board serving to expanding the material bag, the toothed blade on the cutting unit serving to cut and punch a surface of the material bag, making a roll of plastic bags each having an opening on one side, thereby fully automated packaging can be achieved by installing the present invention on an automatic weighing and packaging machine or a in conveyor packaging line for convenient packaging process, to reduce labor cost and enhance packaging efficiency.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: April 13, 2004
    Inventor: Yun Yu Lin
  • Actuating device of wrist exerciser
    Publication number: 20040063546
    Abstract: A wrist exercise includes a casing rotatably receiving a rotor therein. The casing defines slots that are aligned in pair. The rotor has axially aligned rotation shafts respectively and rotatably received in holes defined in the casing for rotatably supporting the rotor inside the casing. A drive roller is mounted to one of the rotation shafts. A drive bar is partially and movable received in the casing through the aligned slots to drivingly engage the drive roller whereby by forcibly pulling the drive bar out of the casing, the drive roller is caused to drive an initial rotation of the rotor with a high rotational speed.
    Type: Application
    Filed: September 27, 2002
    Publication date: April 1, 2004
    Inventors: Yun Yu Chuang, Ming Hung Lin, Pei Sung Chuang
  • Method for forming crystalline silicon nitride
    Patent number: 6707086
    Abstract: In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: March 16, 2004
    Assignees: Infineon Technologies AG, International Business Machines Corp.
    Inventors: Rajarao Jammy, Philip L. Flaitz, Philip E. Batson, Hua Shen, Yun Yu Wang
  • Retaining terminal structure of connector
    Patent number: 6702616
    Abstract: A retaining terminal structure of a connector is for serving as a retaining terminal that provides retaining and positioning effects when assembling a connector. The retaining terminal as a formed integral by metal extrusion includes an L-shaped corner portion; a butting portion formed at a top portion thereof and for serving as butting ground guidance with a connected connector, so as to prevent electrostatic discharge (ESD); and a retaining portion formed at a side thereof and for serving as a retaining member when the retaining terminal is corresponded and assembled. Using the integrated structure of the retaining terminal having ground guidance, and retaining and positioning effects, a number of terminals and retaining components at an interior of the connector is reduced, thereby decreasing steps and production expenses needed for assembly of the connector.
    Type: Grant
    Filed: June 17, 2003
    Date of Patent: March 9, 2004
    Assignee: North Star Systems Corp.
    Inventors: Chi-Sen Chang, Yun-Yu Liu, Yi-Sheng Lin
  • Structure for detecting charging effects in device processing
    Patent number: 6703641
    Abstract: A semiconductor device monitor structure is described which can detect localized defects due to floating-body effects, particularly on SOI device wafers. The monitor structure includes a plurality of cells containing PFET or NFET devices, disposed at a perimeter of the structure which is bordered by an insulating region such as shallow trench isolation (STI). Each cell includes polysilicon gate structures having a characteristic spacing given by a first distance, and a portion extending beyond the perimeter a second distance. The cells are constructed in accordance with progressively varying ground rules, so that the first distance and second distance are non-uniform between cells. The cells may be bit fail mapped for single-cell failures, thereby enabling detection of localized defects due to floating-body effects.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: March 9, 2004
    Assignee: International Business Machines Corporation
    Inventors: Terence L. Kane, Yun Yu Wang, Malcolm P. Cambra, Jr., Michael P. Tenney
  • Method to enhance epi-regrowth in amorphous poly CB contacts
    Publication number: 20040018680
    Abstract: In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where
    Type: Application
    Filed: July 29, 2002
    Publication date: January 29, 2004
    Inventors: Yun Yu Wang, Johnathan Faltermeier, Colleen M. Snavely, Michael Maldei, Michael M. Iwatake, David M. Dobuzinsky, Ravikumar Ramachandran, Viraj Y. Sardesai, Philip L. Flaitz, Lisa Y. Ninomiya
  • Vehicle handlebar grip
    Patent number: 6681653
    Abstract: A vehicle handlebar grip for use in a bicycle or motorcycle is disclosed to include a plastic grip body peripherally covered with a flexible covering, the grip body having an axially extended mounting hole for mounting onto the vehicle handlebar, two annular end grooves at two ends, and two radial through holes in communication with the annular end grooves, two locating rings respectively fitted into the end grooves of the grip body, the locating rings each having a radial screw hole, and two tightening up screws respectively inserted through the through holes of the grip body and threaded into the screw holes of the locating rings to fix the locating rings and the grip body to the vehicle's handlebar.
    Type: Grant
    Filed: May 8, 2002
    Date of Patent: January 27, 2004
    Inventor: Tsai-Yun Yu
  • Frame of bicycle saddle
    Patent number: 6669283
    Abstract: A frame of a bicycle saddle includes a rigid main body molded from rigid plastics and an elastic member molded on the main body from elastic material of hardness lower than the rigid plastics of the main body. The main body has a narrow front portion and a wide rear portion. The elastic member is bounded to a front end of the front portion of the main body and has a smoothly arched front side edge, which provides a cushion in the front end of the saddle to decrease the uncomfortable feeling of the bicyclist when the bicyclist is in contact with the front end of the saddle.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: December 30, 2003
    Inventor: Tsai-Yun Yu
  • Ti liner for copper interconnect with low-k dielectric
    Patent number: 6661097
    Abstract: In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.
    Type: Grant
    Filed: November 1, 2002
    Date of Patent: December 9, 2003
    Assignee: International Business Machines Corporation
    Inventors: Larry Clevenger, Stanley J. Klepeis, Hsiao-Ling Lu, Jeffrey R. Marino, Andrew Herbert Simon, Yun-Yu Wang, Kwong Hon Wong, Chih-Chao Yang
  • Pharmaceutical compositions comprising active vitamin D compounds
    Publication number: 20030191093
    Abstract: Disclosed are pharmaceutical compositions comprising an active vitamin D compound in emulsion pre-concentrate formulations, as well as emulsions and sub-micron droplet emulsions produced therefrom. The compositions comprise a lipophilic phase component, one or more surfactants, and an active vitamin D compound. The compositions may optionally further comprise a hydrophilic phase component.
    Type: Application
    Filed: December 3, 2002
    Publication date: October 9, 2003
    Applicant: Novacea, Inc.
    Inventors: Andrew X. Chen, Jun Fan, Xi-Yun Yu, Martha J. Whitehouse
  • Decoration head for venetian blind rod
    Patent number: D497539
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: October 26, 2004
    Assignee: Piing Heh Enterprise Co., Ltd.
    Inventor: Li-Yun Yu