Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

Abstract: A bicycle saddle is constructed to have a hard bottom shell, a first elastic layer made of foamed plastics and arranged at the top side of the hard bottom shell, a first covering covered on the first elastic layer over the hard bottom shell, and a second elastic layer covered on the first covering, the second elastic layer being formed of a layer of gel arranged at a top side of the first covering and a second covering covered on the layer of gel.

Abstract: A cover tape for winding on a grip of a device comprising an elongated cloth layer and an elastic layer. The cloth layer has a first surface and a second surface. The elastic layer is made of silicone gel and bonded to the first surface of the cloth layer for enabling the second surface of the cloth layer to be exposed to the outside when spirally winding the cover tape round the grip with the elastic layer adhered to the periphery of the grip.

Abstract: Disclosed are pharmaceutical compositions comprising an active vitamin D compound in emulsion pre-concentrate formulations, as well as emulsions and sub-micron droplet emulsions produced therefrom. The compositions comprise a lipophilic phase component, one or more surfactants, and an active vitamin D compound. The compositions may optionally further comprise a hydrophilic phase component.

Abstract: The invention provides a method of forming a wiring layer in an integrated circuit structure that forms an organic insulator, patterns the insulator, deposits a liner on the insulator, and exposes the structure to a plasma to form pores in the insulator in regions next to the liner. The liner is formed thin enough to allow the plasma to pass through the liner and form the pores in the insulator. During the plasma processing, the plasma passes through the liner without affecting the liner. After the plasma processing, additional liner material may be deposited. After this, a conductor is deposited and excess of portions of the conductor are removed from the structure such that the conductor only remains within patterned portions of the insulator. This method produces an integrated circuit structure that has an organic insulator having patterned features, a liner lining the patterned features, and a conductor filling the patterned features.

Abstract: A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additives over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.

Abstract: A method of reducing the contact resistance of metal suicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g.

Abstract: An inline electron holograph method for observing a specimen with a transmission electron microscope having an electron gun, a collimating lens system, two spaced objective lenses, a biprism, and an imaging means comprises the steps of: with the first objective lens forming a virtual image of a portion of the specimen; with the second objective lens focussing the virtual image at an intermediate image plane to form an intermediate image; and projecting the intermediate image onto the imaging means.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: A method of reducing the contact resistance of metal silicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g.

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: A base of a bicycle saddle comprises a main body made of a rigid plastic material. The main body is provided with at least one receiving space corresponding in location to the sitting area of bicyclist and a plurality of supporting bars suspended in the receiving space and defining a plurality of hollows. The base further comprises an elastic body made of a plastic material having a hardness smaller than the hardness of the plastic material of which the main body is made. The elastic body is filled in the receiving space by molding such that the hollows are enclosed by the elastic body, and the elastic body is firmly connected to the main body.

Abstract: In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.

Abstract: A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.

Abstract: A perforation device for making roll of plastic bag with an opening and a perforation line on each bag, comprising a cutting unit, an anvil unit and a expanding board, wherein, the cutting unit involves a main unit whereto are fitted with a toothed blade and a specified number of compressing blocks, the expanding board serving to expanding the material bag, the toothed blade on the cutting unit serving to cut and punch a surface of the material bag, making a roll of plastic bags each having an opening on one side, thereby fully automated packaging can be achieved by installing the present invention on an automatic weighing and packaging machine or a in conveyor packaging line for convenient packaging process, to reduce labor cost and enhance packaging efficiency.

Abstract: A wrist exercise includes a casing rotatably receiving a rotor therein. The casing defines slots that are aligned in pair. The rotor has axially aligned rotation shafts respectively and rotatably received in holes defined in the casing for rotatably supporting the rotor inside the casing. A drive roller is mounted to one of the rotation shafts. A drive bar is partially and movable received in the casing through the aligned slots to drivingly engage the drive roller whereby by forcibly pulling the drive bar out of the casing, the drive roller is caused to drive an initial rotation of the rotor with a high rotational speed.

Abstract: In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.

Abstract: A retaining terminal structure of a connector is for serving as a retaining terminal that provides retaining and positioning effects when assembling a connector. The retaining terminal as a formed integral by metal extrusion includes an L-shaped corner portion; a butting portion formed at a top portion thereof and for serving as butting ground guidance with a connected connector, so as to prevent electrostatic discharge (ESD); and a retaining portion formed at a side thereof and for serving as a retaining member when the retaining terminal is corresponded and assembled. Using the integrated structure of the retaining terminal having ground guidance, and retaining and positioning effects, a number of terminals and retaining components at an interior of the connector is reduced, thereby decreasing steps and production expenses needed for assembly of the connector.