Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Jr based material, a Pt based material or a Ru based material.

Abstract: A system includes a mask. The system further includes a pellicle frame attached to the mask. The pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from a first side of the pellicle from to a second side of the pellicle frame. The pellicle frame further includes a flat bottom surface having only a single recess therein, wherein the flat bottom surface is free of an adhesive. The system further includes a gasket within the single recess.

Abstract: A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to form a frame of a pellicle. The first capping layer and the second capping layer are patterned to form a membrane of the pellicle, wherein the patterning reduces a material of the first capping layer and the second capping layer to form a coating on the nanowires.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

Abstract: A pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The pellicle frame further includes a bottom surface of the frame defines only a single recess therein. The pellicle frame further includes a gasket configured to fit within the single recess.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 µm and about 500 µm. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A computer-implemented method and system for determining placement of a sensor component on a utility pipe. Data relating to the utility pipe is inputted which is processed to generate one or more variables. One or more models are trained, via the one or more variables, to produce an output indicative of a likelihood of failure variable associated with the utility pipe from each model. The outputs from all models are preferably combined into an ensemble output indicative of a likelihood of failure associated with the utility pipe. A consequence of failure variable associated with the utility pipe is determined preferably utilizing a plurality of weighted variables. A sensor placement determinative variable is then determined contingent upon the ensemble output and the consequence of failure variable associated with the utility pipe.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A method of forming an extreme ultraviolet (EUV) mask including forming a multilayer stack comprising alternating stacked Mo-containing layer and Si-containing layer over a mask substrate, forming a first nitride layer over the multilayer stack forming a capping layer over the multilayer stack, forming an absorber layer over the capping layer, and etching the absorber layer to form a pattern in the absorber layer.

Abstract: A lithography system includes an exposure device and a reticle structure disposed in the exposure device. The exposure device includes a reticle having patterned features, a membrane having a boarder section, and a frame disposed and forming an enclosure between the reticle and the membrane to encircle the patterned features. The frame includes a plurality of holes including at least one slit-shaped hole having one side formed by the reticle and three sides formed by the frame.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

Abstract: A computer-implemented method and system for determining placement of a sensor component on a utility pipe. Data relating to the utility pipe is inputted which is processed to generate one or more variables. One or more models are trained, via the one or more variables, to produce an output indicative of a likelihood of failure variable associated with the utility pipe from each model. The outputs from all models are preferably combined into an ensemble output indicative of a likelihood of failure associated with the utility pipe. A consequence of failure variable associated with the utility pipe is determined preferably utilizing a plurality of weighted variables. A sensor placement determinative variable is then determined contingent upon the ensemble output and the consequence of failure variable associated with the utility pipe.