Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A first capping layer is deposited over a substrate. A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to expose the first capping layer. The first capping layer and the second capping layer are thinned around the nanowires to form a coating on the nanowires.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Jr based material, a Pt based material or a Ru based material.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.

Abstract: Methods of mitigating lipoprotein interference in in vitro diagnostic assays for target hydrophobic analytes are disclosed, as well as compositions, kits, and devices useful in said methods. A pretreatment reagent is utilized that includes at least one enzyme that digests lipoprotein.

Abstract: A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.

Abstract: A pellicle includes a frame having an attachment surface configured to attach to a photomask, wherein the frame comprises a vent hole. The pellicle further includes a filter covering the vent hole, wherein the filter directly contacts an inner surface of the frame, and the filter extends in a direction parallel to the attachment surface. The pellicle further includes a membrane extending over a top surface of the frame.

Abstract: A method for forming a structure of a pellicle-mask structure is provided. The method includes forming a mask pattern on a mask substrate. The method also includes bonding a pellicle frame to the mask pattern through a pellicle frame adhesive. The method further includes forming a vent structure in the pellicle frame. In addition, the method includes bonding a pellicle membrane to the pellicle frame. The pellicle membrane includes a peripheral portion over the pellicle frame and a top membrane portion over the peripheral portion, and a lateral width of the peripheral portion of the pellicle membrane is greater than a lateral width of the pellicle frame adhesive.

Abstract: A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

Abstract: Methods of mitigating lipoprotein interference in in vitro diagnostic assays for target hydrophobic analytes are disclosed, as well as compositions, kits, and devices useful in said methods. A pretreatment reagent is utilized that includes at least one enzyme that digests lipoprotein.

Abstract: A pellicle includes a frame configured to attach to a photomask, wherein the frame includes a vent hole. The pellicle further includes a filter covering the vent hole, wherein the filter directly connects to an outer surface of the frame. The pellicle further includes a membrane extending over a top surface of the frame. The pellicle further includes a mount between the frame and the membrane, wherein the mount is attachable to the frame by an adhesive.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A method for forming a structure of a pellicle-mask structure is provided. The method includes bonding a pellicle frame to a mask through a pellicle frame adhesive. The method also includes forming a vent structure in the pellicle frame. The method further includes bonding a pellicle membrane to the pellicle frame through a pellicle membrane adhesive. A first size of the pellicle membrane adhesive is greater than a second size of the pellicle frame adhesive.

Abstract: A first capping layer is deposited over a substrate. A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to expose the first capping layer. The first capping layer and the second capping layer are thinned around the nanowires to form a coating on the nanowires.