Abstract: A reticle structure includes a reticle having patterned features and a first border section enclosing the patterned features. The reticle structure includes a membrane having a middle section a second border section enclosing the middle section. The reticle structure includes a frame disposed between the membrane and the reticle to mount the membrane over the patterned features of the reticle. The frame creates an enclosure between the reticle and the membrane and encircles the patterned features of the reticle. The frame includes a plurality of holes and the plurality of holes produces a threshold percentage of opening in the frame to maintain an equalized pressure difference between the enclosure and outside the enclosure below a threshold pressure.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

Abstract: A pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The pellicle frame further includes a bottom surface of the frame defines only a single recess therein. The pellicle frame further includes a gasket configured to fit within the single recess.

Abstract: A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.

Abstract: Methods of mitigating lipoprotein interference in in vitro diagnostic assays for target hydrophobic analytes are disclosed, as well as compositions, kits, and devices useful in said methods. A pretreatment reagent is utilized that includes at least one enzyme that digests lipoprotein.

Abstract: A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle; and a bottom surface of the frame defines only a single recess therein. The pellicle further includes a gasket configured to fit within the single recess.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

Abstract: A method of forming an extreme ultraviolet (EUV) mask including forming a multilayer stack comprising alternating stacked Mo-containing layer and Si-containing layer over a mask substrate, forming a first nitride layer over the multilayer stack forming a capping layer over the multilayer stack, forming an absorber layer over the capping layer, and etching the absorber layer to form a pattern in the absorber layer.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to form a frame of a pellicle. The first capping layer and the second capping layer are patterned to form a membrane of the pellicle, wherein the patterning reduces a material of the first capping layer and the second capping layer to form a coating on the nanowires.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.

Abstract: Methods of mitigating lipoprotein interference in in vitro diagnostic assays for target hydrophobic analytes are disclosed, as well as compositions, kits, and devices useful in said methods. A pretreatment reagent is utilized that includes at least one enzyme that digests lipoprotein.