Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.

Abstract: A current perpendicular-to-the-plane magnetoresistive (CPP-MR) sensor for a magnetic recording medium has a substantially wedge-shaped free ferromagnetic layer. The free layer thickness is tapered from the back edge (the edge recessed from the medium-facing surface) to the front edge at the medium-facing surface. The thinner free layer front edge thickness reduces the read gap (the spacing between the two sensor magnetic shields), which improves the resolution of the sensor, which in turn allows the bits to be placed closer together in the along-the-track direction. The free layer is thicker at the back edge so the volume of free layer ferromagnetic material can be maintained at the level required for high amplitude of the readback signal.

Abstract: Aspects of the present disclosure provide a magnetic reader and methods for fabricating the same. The magnetic reader has a capping layer structure that can reduce or impede the corrosion and/or recession of a shield layer of the magnetic reader. In a particular embodiment, the capping layer structure includes a ruthenium (Ru) layer that is configured to impede oxygen interdiffusion between an IrMn antiferromagnetic layer and a Ta cap layer.

Abstract: This invention discloses a system and a method for extracting VF signal in ECG recorded during uninterrupted CPR. The present invention provides a method for extracting a Ventricular fibrillation (VF) signal in Electrocardiography (ECG), comprising: receiving an ECG signal; adding a plurality of shadowing functions to the ECG signal, to obtain a plurality of modification signals; decomposing the plurality of modification signals by using an Empirical Mode Decomposition (EMD) method, to generate a plurality of Intrinsic Mode Functions (IMFs); calculating the sum of IMFs in different frequency regions based on time sequence, dividing by a number of the shadowing signal, to obtain a plurality of modification intrinsic mode functions; combining the plurality of modification IMFs with the same property, to obtain a shape function; modeling the shape functions to obtain a compression signal; and subtracting the compression signal from the ECG signal based on time sequence, to obtain the VF signal.

Abstract: A computer-assisted method for quantitative analysis of respiratory sinus arrhythmia (RSA) includes obtaining a time series of a cardiac interval signal from an individual, obtaining a time series of a respiratory signal from the individual; decomposing the cardiac interval signal into a first group of ensemble empirical modes; obtaining, by a computer system, a time series of RSA instantaneous amplitude from at least one of the first group of ensemble empirical modes; decomposing the respiratory signal into a second group of ensemble empirical modes; obtaining a time series of respiratory instantaneous phase from the one of the second group of ensemble empirical modes; determining respiratory period from the time series of the respiratory instantaneous phase; and quantifying RSA in the individual according to a dependence of the RSA instantaneous amplitude on the respiratory period.

Abstract: This invention discloses a system and a method for extracting VF signal in ECG recorded during uninterrupted CPR. The present invention provides a method for extracting a Ventricular fibrillation (VF) signal in Electrocardiography (ECG), comprising: receiving an ECG signal; adding a plurality of shadowing functions to the ECG signal, to obtain a plurality of modification signals; decomposing the plurality of modification signals by using an Empirical Mode Decomposition (EMD) method, to generate a plurality of Intrinsic Mode Functions (IMFs); calculating the sum of IMFs in different frequency regions based on time sequence, dividing by a number of the shadowing signal, to obtain a plurality of modification intrinsic mode functions; combining the plurality of modification IMFs with the same property, to obtain a shape function; modeling the shape functions to obtain a compression signal; and subtracting the compression signal from the ECG signal based on time sequence, to obtain the VF signal.

Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.

Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.

Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.

Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.