Abstract: The present disclosure provides for the development and applications of monomeric, oligomeric and/or polymeric semiconductor materials comprising a five-membered heteroaromatic unit (e.g., thiophene; furan; selenophene; etc.) that includes an acrylyl or an acrylyl-like (—C?C—CO—) side chain. The semiconductor materials can be used as organic semiconductors for use in electronic, optical, or optoelectronic devices such as organic thin film transistors and organic photovoltaics. The disclosed semiconductor materials (e.g., semiconducting polymer compounds) can be used as high performance semiconductors (e.g., for organic solar cells or organic photovoltaics (OPVs)), and the disclosed semiconductor materials can be used for other devices (e.g., organic thin film transistors (OTFTs) and sensors, etc.).

Abstract: The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than ?4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.

Abstract: The present disclosure provides for the development and applications of monomeric, oligomeric and/or polymeric semiconductor materials comprising a five-membered heteroaromatic unit (e.g., thiophene; furan; selenophene; etc.) that includes an acrylyl or an acrylyl-like (—C?C—CO—) side chain. The semiconductor materials can be used as organic semiconductors for use in electronic, optical, or optoelectronic devices such as organic thin film transistors and organic photovoltaics. The disclosed semiconductor materials (e.g., semiconducting polymer compounds) can be used as high performance semiconductors (e.g., for organic solar cells or organic photovoltaics (OPVs)), and the disclosed semiconductor materials can be used for other devices (e.g., organic thin film transistors (OTFTs) and sensors, etc.).

Abstract: The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than ?4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.

Abstract: Methods for unlocking a mobile terminal can include capturing a face image of a user through a front-facing camera of the mobile terminal in response to a sliding action applied to a sliding module on the mobile terminal; and unlocking the mobile terminal by using the captured face image as a key.

Abstract: Methods for unlocking a mobile terminal can include capturing a face image of a user through a front-facing camera of the mobile terminal in response to a sliding action applied to a sliding module on the mobile terminal; and unlocking the mobile terminal by using the captured face image as a key.

Abstract: The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (OSC) and an organic phosphorous-containing additive (OPA) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic, optical, or optoelectronic devices such as organic thin film transistors, organic photovoltaics, and organic light emitting devices.

Abstract: A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials.

Abstract: The present invention describes the monomeric, oligomeric and polymeric materials comprising a fused-ring moiety, which can be used as organic semiconductors for use in electronic, optical, or optoelectronic devices such as organic thin film transistors and organic photovoltaics.

Abstract: A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.

Abstract: A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material.

Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract: Processes for producing carboxylic acid-stabilized silver nanoparticles are disclosed. A reaction mixture comprising a silver salt, a carboxylic acid, and a tertiary amine is heated to form carboxylic acid-stabilized silver nanoparticles.

Abstract: The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member.