Abstract: Processes for producing carboxylic acid-stabilized silver nanoparticles are disclosed. A reaction mixture comprising a silver salt, a carboxylic acid, and a tertiary amine is heated to form carboxylic acid-stabilized silver nanoparticles.

Abstract: A process comprising: (a) preparing a reaction mixture comprising a silver salt, the reducing agent comprising a hydrazine compound, a thermally removable stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles, wherein the reaction mixture generates an acid; and (b) removing the acid to produce the silver-containing nanoparticles substantially free of acid.

Abstract: The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member.

Abstract: A polymer of the formula/structure wherein R represents alkyl, alkoxy, aryl, or heteroaryl; each R1 and R2 is independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; R3 and R4 are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR? wherein R? is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Abstract: A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.

Abstract: Processes for producing silver nanoparticles are disclosed. A reaction mixture comprising a silver compound, a carboxylic acid, an amine compound, and an optional solvent is optionally heated. A hydrazine compound is then added and the mixture is further reacted to produce the silver nanoparticles.

Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Abstract: A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract: There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials.

Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.

Abstract: There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material.

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract: An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R? and R? are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.

Abstract: Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (I): where R? is alkyl having from about 1 to about 24 carbon atoms; R? is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.

Abstract: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.

Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Abstract: A method of forming conductive features on a substrate, the method comprising: providing two or more solutions, wherein a metal nanoparticle solution contains metal nanoparticles with a stabilizer and a destabilizer solution contains a destabilizer that destabilizes the stabilizer, liquid depositing the metal nanoparticle solution and the destabilizer solution onto the substrate, wherein during deposition or following the deposition of the metal nanoparticle solution onto the substrate, the metal nanoparticle and the destabilizer are combined with each other, destabilizing the stabilizer from the surface of the metal nanoparticles with the destabilizer and removing the stabilizer and destabilizer from the substrate by heating the substrate to a temperature below about 180° C. or by washing with the solvent.