Abstract: A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure.

Abstract: Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.

Abstract: Methods for integrated electronic and photonic design include laying out electronic and photonic design components in a design environment; adjusting photonic components according to photonic design requirements using a processor; checking design rules for electronic and photonic components according to manufacturing requirements; and adjusting component positioning and size to reconcile conflicts between electronic and photonic components.

Abstract: Methods for integrated electronic and photonic design include laying out electronic and photonic design components in a design environment; adjusting photonic components according to photonic design requirements using a processor; checking design rules for electronic and photonic components according to manufacturing requirements; and adjusting component positioning and size to reconcile conflicts between electronic and photonic components.

Abstract: Systems for integrated electronic and photonic design include a graphical user interface (GUI) configured to lay out electronic and photonic design components in a design environment; a design rule checking (DRC) module configured to check design rules for electronic and photonic components according to manufacturing requirements; and a processor configured to adjust photonic components according to photonic design requirements and to reconcile conflicts between electronic and photonic components.

Abstract: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.

Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

Abstract: A method of exciting a selected light propagation mode in a device is disclosed. At least two light beams are propagated proximate a waveguide of the device substantially parallel to a selected surface of the waveguide. Light is transferred from the at least two beams of light into the waveguide through the selected surface to excite the selected light propagation mode in the waveguide.

Abstract: A method of exciting a selected light propagation mode in a device is disclosed. At least two light beams are propagated proximate a waveguide of the device substantially parallel to a selected surface of the waveguide. Light is transferred from the at least two beams of light into the waveguide through the selected surface to excite the selected light propagation mode in the waveguide.

Abstract: The present invention is a method and an apparatus for dynamic manipulation and dispersion in photonic crystal devices. In one embodiment, a photonic crystal structure comprises a substrate having a plurality of apertures formed therethrough, a waveguide formed by “removing” a row of apertures, and a plurality of pairs of lateral electrical contacts, the lateral electrical contact pairs extending along the length of the waveguide in a spaced-apart manner. The lateral electrical contact pairs facilitate local manipulation of the photonic crystal structure's refractive index. Thus, optical signals of different wavelengths that propagate through the photonic crystal structure can be dynamically manipulated.

Abstract: A transmission line and method for implementing includes a plurality of segments forming an electrical path and a continuous optical path passing through the segments. Discrete inductors are formed between and connect adjacent segments. The inductors are formed in a plurality of metal layers of an integrated circuit to balance capacitance of an optical modulator which includes the transmission line to achieve a characteristic impedance for the transmission line.

Abstract: Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate.

Abstract: A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.

Abstract: A transmission line and method for implementing includes a plurality of segments forming an electrical path and a continuous optical path passing through the segments. Discrete inductors are formed between and connect adjacent segments. The inductors are formed in a plurality of metal layers of an integrated circuit to balance capacitance of an optical modulator which includes the transmission line to achieve a characteristic impedance for the transmission line.

Abstract: An optical receiver, a method of operating an optical receiver, a correction based transimpedance amplifier circuit, and a method of adjusting an output of a transimpedance amplifier. In one embodiment, the optical receiver comprises an optical-to-electrical converter, a transimpedance amplifier, and a correction circuit. The optical-to-electrical converter is provided for receiving an optical signal and converting the optical signal to an electrical signal. The transimpedance amplifier is provided for receiving the electrical signal from the converter and for generating from the electrical signal an amplified electrical signal. The amplified electrical signal has inter symbol interference resulting from a reduced bandwidth of the transimpedance amplifier.

Abstract: A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure.

Abstract: An optical modulator device includes a body portion operative to propagate an optical mode along a longitudinal axis of the body portion, the body portion comprising a first layer disposed on a second layer, wherein the first layer includes a first p-type doped region adjacent to a first n-type doped region along the longitudinal axis of the body portion, and the second layer includes a second n-type doped region disposed on the first p-type doped region and a second p-type doped region adjacent to the second n-type doped region along the longitudinal axis of the body portion, the second p-type doped region disposed on the first n-type doped region.

Abstract: A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.

Abstract: A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.

Abstract: An optoelectronic apparatus for controlling a signal includes an optical waveguide having a variable refractive index; an active device formed within the waveguide, the device having three electrodes, a drain, a source and a gate; and wherein the device is located within the waveguide so that current flowing from the drain to the source changes the refractive index.