Abstract: An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Abstract: An imaging device according to the present disclosure includes: a pixel including a photoelectric converter configured to generate a signal in response to entering light, a storage configured to store data corresponding to the signal, and an output section configured to output the data stored in the storage; and a controller configured to control the output section to output the data in a case where the data stored in the storage satisfies a predetermined condition.

Abstract: A potential measurement device includes a plurality of read-out electrodes arranged in an array shape and that detects a potential at a potential generation point generated due to a chemical change, and a reference electrode that detects a reference potential. The reference electrode is arranged within the array of the read-out electrodes. With this configuration, a low-noise potential measurement device in which noise superimposed on a wire from each of the read-out electrodes to an amplifier and noise superimposed on a wire from the reference electrode to the amplifier, i.e., wiring noise, can be reduced is achieved.

Abstract: The present technology relates to a comparator circuit, a solid-state imaging apparatus, and an electronic device which enable to improve a frame rate. A comparator compares an analog signal with a reference signal, an amplification stage amplifies output of a comparing unit and has different output change speeds in normal rotation and in reverse rotation, and a switch circuit fixes an input node or an output node of the amplification stage to a predetermined voltage in a predetermined period before a comparing operation by the comparator so that the amplification stage operates in a change direction having a higher output change speed. The present technology can be applied to a comparator circuit provided to an A/D converter of a CMOS image sensor.

Abstract: To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Abstract: The present disclosure relates to a signal processing apparatus and method, an imaging element, and an electronic apparatus capable of suppressing an increase in area. The present disclosure divides a predetermined current generated by receiving a gain control signal that controls a gain into a plurality of output currents and a non-output current in accordance with a value of an input digital signal and outputs the plurality of output currents as a plurality of analog signals. The present technology can be applied to for example, electronic circuits such as a D/A converter circuit and an A/D converter circuit, imaging elements such as a CMOS image sensor, electronic apparatuses such as a digital still camera, and the like.

Abstract: The present disclosure relates to a semiconductor device and a cell potential measuring apparatus capable of amplifying and reading a potential of solution with high accuracy. A reading electrode reads the potential of the solution. A differential amplifier includes a current mirror circuit. The reading electrode is connected to a first input terminal of the differential amplifier which is connected to a gate of a first input transistor connected to a diode-connected pMOS transistor of the current mirror circuit. An output terminal of the differential amplifier is connected to a second input terminal of the differential amplifier, which is connected to a gate of a second input transistor connected to a pMOS transistor of the current mirror circuit which is not diode-connected, via a capacitor. For example, the present disclosure is applied to the cell potential measuring apparatus and the like.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: A solid-state image pickup apparatus includes a pixel array unit in which image signal generation pixels for generating analog image signals in response to light irradiated thereupon and correction signal generation pixels for generating analog correction signals for correcting the image signals are arranged in a matrix pattern. A conversion unit performs first conversion that is conversion from the analog image signals generated by the image signal generation pixels arranged in a row in the matrix pattern into digital image signals. The conversion unit further performs second conversion, which is conversion performed at substantially the same time with the first conversion, from the analog correction signals generated by the correction signal generation pixels arranged in a plurality of rows in the matrix pattern into digital correction signals. A correction unit performs correction of the digital image signals with the digital correction signals generated in the plurality of rows.

Abstract: An imaging device according to the present disclosure includes: a pixel including a photoelectric converter configured to generate a signal in response to entering light, a storage configured to store data corresponding to the signal, and an output section configured to output the data stored in the storage; and a controller configured to control the output section to output the data in a case where the data stored in the storage satisfies a predetermined condition.

Abstract: There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

Abstract: The present technology relates to a comparator circuit, a solid-state imaging apparatus, and an electronic device which enable to improve a frame rate. A comparator compares an analog signal with a reference signal, an amplification stage amplifies output of a comparing unit and has different output change speeds in normal rotation and in reverse rotation, and a switch circuit fixes an input node or an output node of the amplification stage to a predetermined voltage in a predetermined period before a comparing operation by the comparator so that the amplification stage operates in a change direction having a higher output change speed. The present technology can be applied to a comparator circuit provided to an A/D converter of a CMOS image sensor.

Abstract: A signal processing device includes a comparison unit to compare a signal level of an analog signal with a signal level of a reference signal; a selection unit configured to select the reference signal to be supplied to the comparison unit; and a switching unit capable of switching a signal line connected to an input terminal of the comparison unit such that a signal line via which the selected reference signal is transmitted is connected to the input terminal of the comparison unit, wherein the comparison unit includes a floating node as the input terminal, the selection unit includes a signal line in which a parasitic capacitance is caused between the signal line and the floating node as the input terminal of the comparison unit, and the signal line of the selection unit is configured to transmit an identical level of signal in multiple comparison processes of the comparison unit.

Abstract: The present technology relates to signal processing device and method, an imaging element, and an electronic device capable of reducing a rise of costs. A signal processing device according to the present technology includes a measurement unit that performs measurement of a length of a period from an input start of a signal to a change of a value of the signal a plurality of times, retains measured values obtained by the measurement performed the plurality of times, sets an initial value of the measurement on the basis of any one of a plurality of the retained measured values, and performs the measurement by using the initial value. The present technology is applicable to an electronic circuit such as a flip-flop circuit and an A/D conversion unit, an imaging element such as a CMOS image sensor, and an electronic device such as a digital still camera, for example.

Abstract: The present technology relates to a comparator circuit, a solid-state imaging apparatus, and an electronic device which enable to improve a frame rate. A comparator compares an analog signal with a reference signal, an amplification stage amplifies output of a comparing unit and has different output change speeds in normal rotation and in reverse rotation, and a switch circuit fixes an input node or an output node of the amplification stage to a predetermined voltage in a predetermined period before a comparing operation by the comparator so that the amplification stage operates in a change direction having a higher output change speed. The present technology can be applied to a comparator circuit provided to an A/D converter of a CMOS image sensor.

Abstract: The present technology relates to signal processing device and method, an imaging element, and an electronic device capable of reducing a rise of costs. A signal processing device according to the present technology includes a measurement unit that performs measurement of a length of a period from an input start of a signal to a change of a value of the signal a plurality of times, retains measured values obtained by the measurement performed the plurality of times, sets an initial value of the measurement on the basis of any one of a plurality of the retained measured values, and performs the measurement by using the initial value. The present technology is applicable to an electronic circuit such as a flip-flop circuit and an A/D conversion unit, an imaging element such as a CMOS image sensor, and an electronic device such as a digital still camera, for example.