Abstract: A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.

Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.

Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

Abstract: A driving method of a solid-state imaging apparatus includes a first driving mode wherein a start and an end of an operation of accumulating an electric charge in a pixel are set commonly to a plurality of rows of pixels, and a second driving mode wherein a start and an end of an operation of accumulating the electric charge in the pixel are set commonly to pixels in each one of the rows of the pixels.

Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.

Abstract: An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.

Abstract: An orientation of crystal axis <001> of the metallic material as a solid solution having a structure of body-centered cubic (BCC) is arranged along a work surface of the metallic material by hot rolling process in a temperature range of structuring the metallic material to be BCC single phase solid solution. For example, Fe-Si alloy as the metallic material is heated in the temperature range for BCC single phase solid solution, and processed so as to arrange the orientation of crystal axis <001> along the work surface by pressing the BCC single phase solid solution in a strain rate to maintain work condition for controlling motion of dislocation by atmosphere of solute atom generated in BCC single solid solution and migrating grain boundary by strain energy stored in a crystal grain as driving force.

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semi-conductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.

Abstract: A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.

Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

Abstract: A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started.

Abstract: An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.

Abstract: A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started.

Abstract: An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.

Abstract: A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.

Abstract: A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row.

Abstract: A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.

Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.