Patents by Inventor Yusuke Onuki
Yusuke Onuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9130071Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.Type: GrantFiled: July 8, 2014Date of Patent: September 8, 2015Assignee: Canon Kabushiki KaishaInventors: Kentarou Suzuki, Yusuke Onuki
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Publication number: 20150228692Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.Type: ApplicationFiled: April 22, 2015Publication date: August 13, 2015Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
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Patent number: 9083908Abstract: A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.Type: GrantFiled: March 15, 2013Date of Patent: July 14, 2015Assignee: Canon Kabushiki KaishaInventors: Yuichiro Yamashita, Masahiro Kobayashi, Takanori Watanabe, Shinsuke Kojima, Takeshi Ichikawa, Yusuke Onuki
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Publication number: 20150189211Abstract: Each of a plurality of pixel circuits is an insulated gate transistor and includes a first kind transistor having a maximum value of a gate potential difference to be applied equal to or higher than a first value. Each of a plurality of analog signal processing circuits is an insulated gate transistor and includes a second kind transistor having a maximum value of a gate potential difference to be applied equal to or lower than a second value that is lower than the first value. Each of a plurality of analog signal processing circuits does not include an insulated gate transistor having a maximum value of a gate potential difference to be applied not higher than the second value.Type: ApplicationFiled: December 22, 2014Publication date: July 2, 2015Inventors: Kazuo Kokumai, Yusuke Onuki, Hiroaki Naruse, Masashi Kusukawa, Katsunori Hirota, Nobuyuki Endo, Kazuo Yamazaki, Hiroaki Kobayashi
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Publication number: 20150147843Abstract: A method of manufacturing a photoelectric conversion apparatus which includes a pixel circuit section having a well where a photoelectric conversion element and an amplification element configured to generate a signal based on an amount of charge generated in the photoelectric conversion element are arranged, and a peripheral circuit section having a MOS transistor. The method includes forming a dielectric film for covering the photoelectric conversion element, the amplification element, and a gate electrode of the MOS transistor and forming, by etching the dielectric film, a side spacer by remaining a portion of the dielectric film on a side surface of the gate electrode while protecting by a resist, wherein an opening is formed in the dielectric film of the pixel circuit section with the etching, and a contact for defining a potential of the well is formed through the opening.Type: ApplicationFiled: November 4, 2014Publication date: May 28, 2015Inventors: Yusuke Onuki, Hiroaki Naruse, Masashi Kusukawa, Katsunori Hirota
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Patent number: 9041132Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.Type: GrantFiled: September 29, 2010Date of Patent: May 26, 2015Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
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Patent number: 8941044Abstract: An apparatus includes a plurality of pixels each including a charge storage part, a photoelectric conversion part, a first transfer part and a second transfer part, when a signal charge generated during one period is transferred to an amplifier, a control unit supplies pulses such that a turning-on pulse is supplied to the second transfer part while supplying a turning-off pulse to the first transfer part thereby transferring the stored signal charge to the amplifier, a turning-on pulse is then supplied to a reset part to reset the signal charge transferred to the amplifier, and subsequently a turning-on pulse is supplied to the first transfer part and the second transfer part to transfer the signal charge held in the photoelectric conversion part to the amplifier.Type: GrantFiled: April 17, 2013Date of Patent: January 27, 2015Assignee: Canon Kabushiki KaishaInventors: Yuichiro Yamashita, Yusuke Onuki
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SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS
Publication number: 20150009388Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.Type: ApplicationFiled: September 22, 2014Publication date: January 8, 2015Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki -
Publication number: 20140361346Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.Type: ApplicationFiled: August 22, 2014Publication date: December 11, 2014Inventors: Yusuke Onuki, Yuichiro Yamashita, Masahiro Kobayashi
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Publication number: 20140313384Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.Type: ApplicationFiled: July 8, 2014Publication date: October 23, 2014Inventors: Kentarou Suzuki, Yusuke Onuki
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Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus
Patent number: 8860862Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.Type: GrantFiled: May 16, 2012Date of Patent: October 14, 2014Assignee: Canon Kabushiki KaishaInventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki -
Patent number: 8847346Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.Type: GrantFiled: October 6, 2010Date of Patent: September 30, 2014Assignee: Canon Kabushiki KaishaInventors: Yusuke Onuki, Yuichiro Yamashita, Masahiro Kobayashi
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Patent number: 8823125Abstract: A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.Type: GrantFiled: October 6, 2010Date of Patent: September 2, 2014Assignee: Canon Kabushiki KaishaInventors: Yusuke Onuki, Yuichiro Yamashita, Masahiro Kobayashi
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Patent number: 8809914Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.Type: GrantFiled: June 6, 2013Date of Patent: August 19, 2014Assignee: Canon Kabushiki KaishaInventors: Kentarou Suzuki, Yusuke Onuki
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Patent number: 8736734Abstract: A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started.Type: GrantFiled: January 27, 2012Date of Patent: May 27, 2014Assignee: Canon Kabushiki KaishaInventors: Yusuke Onuki, Yuichiro Yamashita
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Patent number: 8717452Abstract: An apparatus includes a plurality of pixels each including a charge storage part, a photoelectric conversion part, a first transfer part and a second transfer part, when a signal charge generated during one period is transferred to an amplifier, a control unit supplies pulses such that a turning-on pulse is supplied to the second transfer part while supplying a turning-off pulse to the first transfer part thereby transferring the stored signal charge to the amplifier, a turning-on pulse is then supplied to a reset part to reset the signal charge transferred to the amplifier, and subsequently a turning-on pulse is supplied to the first transfer part and the second transfer part to transfer the signal charge held in the photoelectric conversion part to the amplifier.Type: GrantFiled: October 7, 2009Date of Patent: May 6, 2014Assignee: Canon Kabushiki KaishaInventors: Yuichiro Yamashita, Yusuke Onuki
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Patent number: 8710613Abstract: A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.Type: GrantFiled: October 6, 2010Date of Patent: April 29, 2014Assignee: Canon Kabushiki KaishaInventors: Yuichiro Yamashita, Masahiro Kobayashi, Yusuke Onuki
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Patent number: 8625010Abstract: A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.Type: GrantFiled: April 30, 2009Date of Patent: January 7, 2014Assignee: Canon Kabushiki KaishaInventors: Yuichiro Yamashita, Masahiro Kobayashi, Takanori Watanabe, Shinsuke Kojima, Takeshi Ichikawa, Yusuke Onuki
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Publication number: 20130334641Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.Type: ApplicationFiled: June 6, 2013Publication date: December 19, 2013Inventors: Kentarou Suzuki, Yusuke Onuki
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Patent number: 8551873Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.Type: GrantFiled: September 11, 2012Date of Patent: October 8, 2013Assignee: Canon Kabushiki KaishaInventors: Yusuke Onuki, Takehito Okabe, Hideaki Ishino