Abstract: Respective first signal holding units of a plurality of sets are commonly connected to an input node of an amplification unit of one set via a second transfer unit of a set to which the first signal holding unit corresponds, and respective second signal holding units of the plurality of sets are commonly connected to the input node of the amplification unit of one set via a fourth transfer unit of a set to which the second signal holding unit corresponds.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

Abstract: Provided are a solid-state image pickup apparatus which includes: a semiconductor substrate having a plurality of photoelectric converters; a first and a second insulating layers formed on the semiconductor substrate; an optical waveguide formed above each of the plurality of photoelectric converters and in an opening portion of the first and the second insulating layers, and has a refractive index higher than a refractive index of the first insulating layer; and a light reflecting layer formed at a boundary between the optical waveguide and the second insulating layer, and has a refractive index lower than a refractive index of the optical waveguide, where the following expression is satisfied: ?<90°, where a represents an angle formed by a boundary surface between the light reflecting layer and the second insulating layer with respect to a boundary surface between the first insulating layer and the second insulating layer.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

Abstract: The imaging apparatuses according to the embodiments perform an operation of outputting a plurality of signals from pixels to an output line a plurality of times. In each operation, both of first and second transfer switches are brought into an on state so that a discharge operation of discharging charge of a photoelectric conversion unit through a holding unit is performed. In a first period, the photoelectric conversion unit of at least one of the pixels accumulates charge. The operation performed a plurality of times includes a first operation and a second operation to be performed after the first operation. After the output operation in the first operation is terminated, the discharge operation in the second operation is performed.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A method of manufacturing a solid-state image sensor includes forming a first element isolation and a first active region of a pixel area, and a second isolation and a second active region of a peripheral circuit area, forming a gate electrode film covering the first element isolation, the first active region, the second element isolation and the second active region, implanting an n-type impurity selectively into at least a part of the gate electrode film corresponding to the pixel area, and forming, after the implanting of the n-type impurity, a first gate electrode of the pixel area and a second gate electrode of the peripheral circuit area by patterning the gate electrode film. The part of the gate electrode film includes a portion located above a boundary between the first element isolation and the first active region.

Abstract: A photoelectric conversion unit in each of a plurality of pixels starts accumulation of charges at a first time and is controlled to be turned on after the first time and to be thereafter turned off at a second time to transfer the charges to a holding unit. A second transfer switch in at least one of the pixels is controlled to be turned on at a third time and a fourth time after the second time to transfer the charges held in the holding unit to an amplification unit, and a first transfer switch in the at least one of the pixels is maintained to be in an off state during a period from the third time to a fourth time.

Abstract: A method of manufacturing a solid-state image sensor, including a first transistor for transferring charges from a charge accumulation region to a first charge holding region and a second transistor for transferring charges from the first charge holding region to a second charge holding region, the method comprising forming, on the semiconductor substrate, a resist pattern having a opening on the first charge holding region, and injecting a impurity via the opening so as to make the first charge holding region be a buried type, wherein the impurity is injected such that an impurity region, which makes the first charge holding region be a buried type, is formed at a position away from an end of the gate electrode of the second transistor.

Abstract: In a state where an electric charge is held in a first charge holding unit, starting accumulation of an electric charge in a photoelectric conversion unit simultaneously in a plurality of pixel rows, and performing a first transfer operation for transferring an electric charge from the photoelectric conversion unit to the first charge holding unit simultaneously in the plurality of pixel rows.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A method of manufacturing a solid-state image sensor, including a first transistor for transferring charges from a charge accumulation region to a first charge holding region and a second transistor for transferring charges from the first charge holding region to a second charge holding region, the method comprising forming, on the semiconductor substrate, a resist pattern having a opening on the first charge holding region, and injecting a impurity via the opening so as to make the first charge holding region be a buried type, wherein the impurity is injected such that an impurity region, which makes the first charge holding region be a buried type, is formed at a position away from an end of the gate electrode of the second transistor.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract: A solid-state image sensor includes a pixel area and a peripheral circuit area. The pixel area includes a first MOS, and the peripheral circuit area includes a second MOS. A method includes forming a gate of the first MOS and a gate of the second MOS, forming a first insulating film to cover the gates of the first and second MOSs, etching the first insulating film in the peripheral circuit area in a state that the pixel area is masked to form a side spacer on a side face of the gate of the second MOS, etching the first insulating film in the pixel area in a state that the peripheral circuit area is masked, and forming the second insulating film to cover the gates of the first and second MOSs and the side spacers.

Abstract: An image device transfers charges of a previous frame from the holding units to the amplification units, during a read-out period of each frame, the read-out period includes a period in which a plurality of overflow transistors are in an on-state and a first period in which a plurality of photoelectric conversion units accumulate charges, and, during a second period following the first period, the plurality of photoelectric conversion units of the plurality of pixels accumulate charges while the plurality of holding units of the plurality of pixels hold the charges accumulated during the first period. During the first and second periods, each of the plurality of pixels performs a plurality of times of charge transfers from the photoelectric conversion unit to the holding unit. The plurality of times of charge transfers including a charge transfer performed at the end of the second period.