Abstract: A photodetector according to one embodiment of the present disclosure includes a semiconductor layer, a plurality of pixels including a first pixel including a photoelectric conversion element provided in the semiconductor layer, and a trench provided between the plurality of pixels adjacent to each other in the semiconductor layer. The first pixel includes a transistor provided on a side of a first surface of the semiconductor layer, a first semiconductor region having a first conductivity type, which is provided on the side of the first surface of the semiconductor layer, and a first contact that is electrically coupled to the first semiconductor region. The first semiconductor region is in contact with the transistor.

Abstract: The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity. A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a plurality of pixel blocks each including a plurality of light-receiving pixels including color filters of same color, the plurality of light-receiving pixels being divided into a plurality of first pixel pairs each including two light-receiving pixels adjacent to each other in a first direction; a plurality of lenses provided at respective positions corresponding to the plurality of first pixel pairs; and a plurality of floating diffusion layers each disposed at a boundary between the two light-receiving pixels, of the plurality of first pixel pairs, adjacent to each other in the first direction, the plurality of floating diffusion layers each shared in the plurality of first pixel pairs.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.

Abstract: A photodetector including: an amplification region that includes a PN junction provided in a depth direction in a semiconductor layer and that is to be electrically coupled to a cathode; a separation region that defines a pixel region including the amplification region; a hole accumulation region that is provided along a side surface of the separation region and that is to be electrically coupled to an anode; and a gate electrode provided in a region between the amplification region and the hole accumulation region and stacked over the semiconductor layer with a gate insulating film interposed therebetween.

Abstract: According to the present invention, a wind power generation system includes: a wind power generation apparatus including a blade that rotates by receiving wind, a main shaft that transmits rotational energy of the blade, and a generator that converts the rotational energy into electricity; and a building in which the wind power generation apparatus is installed, in which the building includes a corner portion having a chamfered shape and two wall surfaces adjacent to the corner portion, and the blade is installed in an installation region including the corner portion and a surface having each of the two wall surfaces adjacent to the corner portion.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Abstract: A photodetector comprising: a separation region that is provided in a semiconductor substrate and defines a pixel region; a hole accumulation region that is provided in the semiconductor substrate of the pixel region along a side surface of the separation region; a multiplication region that is provided in the semiconductor substrate of the pixel region and is configured by joining a first conductivity type region and a second conductivity type region from the surface side of the semiconductor substrate in the thickness direction of the semiconductor substrate; and an insulating region provided in the semiconductor substrate in a region between the multiplication region and the hole accumulation region, wherein a formation depth of the insulating region is larger than a formation depth of the first conductivity type region.

Abstract: Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Abstract: A light detection device according to an embodiment of the present disclosure includes: a semiconductor substrate that includes a first surface and a second surface opposed to each other, and includes a pixel array in which a plurality of pixels is disposed in an array; a semiconductor layer that is provided on a side of the first surface of the semiconductor substrate; a light receiver that is provided inside the semiconductor substrate for each of the pixels, and generates carriers corresponding to a received light amount by photoelectric conversion; a multiplier that includes a first conduction-type region and a second conduction-type region sequentially stacked on the side of the first surface, at least the second conduction-type region being provided in the semiconductor layer, and that performs avalanche multiplication on the carriers generated by the light receiver; a first electrode that is provided on the side of the first surface, and is electrically coupled to the light receiver; and a second elect

Abstract: Provided is an optical detection device capable of suppressing a fluctuation of a drive starting voltage in a pixel. The optical detection device according to the present disclosure includes: a semiconductor substrate that has a first surface as a light incident surface and a second surface on an opposite side to the light incident surface; a first pixel that is in the semiconductor substrate and has an avalanche amplification region including a first conductive region and a second conductive region; a pixel isolation portion that isolates the first pixel from an adjacent pixel; a first insulation film that is provided on the second surface side and in contact with the pixel isolation portion; and a second insulation film that is provided between the first insulation film and the avalanche amplification region, in which a film thickness of the second insulation film is larger than the film thickness of the first insulation film.

Abstract: A photodetection device is provided which includes a pixel array unit including a plurality of pixels arranged in a matrix on a semiconductor substrate to detect light, in which each of the pixels includes a pixel separation wall that surrounds the pixels and separates the pixels from one another, a photoelectric conversion unit inside the semiconductor substrate to generate an electric charge by light, a multiplication region inside the semiconductor substrate to multiply the electric charge from the photoelectric conversion unit, and first and second reflective portions that reflect light traveling toward outside the semiconductor substrate into the semiconductor substrate, the first reflective portion is provided, on a first surface that receives light of the semiconductor substrate, to protrude from the pixel separation wall toward a pixel center, and the second reflective portion is provided on a second surface of the semiconductor substrate facing the first surface.

Abstract: In order to achieve the above objects, according to the present invention, an information processing system includes a wind-condition estimation unit that estimates wind-condition information in a predetermined space region, and an evaluation unit that evaluates flight difficulty or economic efficiency of an aircraft based on the estimated wind-condition information. According to the present invention, an information processing method includes estimating wind-condition information in a predetermined space region, and evaluating flight difficulty or economic efficiency of an aircraft based on the estimated wind-condition information.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.