Abstract: [Problem] To perform distance measurement processing with low power consumption while enabling miniaturization and cost reduction. [Solution] A distance-measuring device measures a distance to an object based on a reflected light signal received by a light-receiving portion, the reflected light signal being generated when a light pulse signal emitted from a light-emitting portion is reflected by the object. The distance-measuring device includes a first substrate formed of a Group-IV material on which the light-receiving portion and the light-emitting portion are integrally arranged; and a second substrate which is laminated on the first substrate and on which a readout circuit for reading out a light-reception signal received by the light-receiving portion is arranged.

Abstract: The present disclosure relates to a light reception element and an electronic device that make it possible to achieve better performance. Provided is a SPAD element including an avalanche multiplication region provided at a junction surface between an N-type diffusion layer and a P-type diffusion layer provided on a side of a sensor substrate opposite from a light reception surface of the sensor substrate, a hole accumulation layer provided so as to surround a lateral surface and a light reception surface of a well provided in the sensor substrate, a pinning layer provided outside the hole accumulation layer, and an in-pixel trench structure provided in a pixel region, the pinning layer being formed all over an outer peripheral surface of the in-pixel trench structure. The present technology is applicable to, for example, a distance image sensor that performs time-of-flight (ToF)-based distance measurement.

Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region, and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Abstract: Provided is an optical detection device capable of suppressing a fluctuation of a drive starting voltage in a pixel. The optical detection device includes: a semiconductor substrate that has a first surface as a light incident surface and a second surface on an opposite side to the light incident surface; a first pixel that is in the semiconductor substrate and has an avalanche amplification region including a first conductive region and a second conductive region; a pixel isolation portion that isolates the first pixel from an adjacent pixel; a first insulation film that is provided on the second surface side and in contact with the pixel isolation portion; and a second insulation film that is provided between the first insulation film and the avalanche amplification region, in which a film thickness of the second insulation film is larger than the film thickness of the first insulation film.

Abstract: Provided is a light receiving element capable of lowering the on-voltage of a transfer transistor and suppressing transfer failures at a low on-voltage.

Abstract: The present technology relates to a light receiving device, a method for manufacturing the same, and a distance measuring device capable of improving distance measurement accuracy by maintaining the balance of transfer capability between transfer transistors.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: The present technology provides a photodetection device in which an increase in capacitance of charge accumulation regions is prevented.

Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Abstract: In one example, an imaging device includes first junction electrodes on a junction surface of a first substrate with a second substrate and electrically coupled to respective floating diffusion layers; and second junction electrodes on a junction surface of the second substrate with the first substrate and joined to respective ones of the first junction electrodes. The first substrate and the second substrate are stacked, and electric charge temporarily held is read as signal charge at different timings of the respective floating diffusion layers electrically coupled to one of the first and second junction electrodes that are joined to each other and to another adjacent one of the first and second junction electrodes that are joined to each other.

Abstract: A photodetector according to one embodiment of the present disclosure includes a semiconductor layer, a plurality of pixels including a first pixel including a photoelectric conversion element provided in the semiconductor layer, and a trench provided between the plurality of pixels adjacent to each other in the semiconductor layer. The first pixel includes a transistor provided on a side of a first surface of the semiconductor layer, a first semiconductor region having a first conductivity type, which is provided on the side of the first surface of the semiconductor layer, and a first contact that is electrically coupled to the first semiconductor region. The first semiconductor region is in contact with the transistor.

Abstract: The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity. A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: To provide a technique for improving image quality. A light detection apparatus includes: a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; a plurality of photoelectric conversion regions provided on the semiconductor layer so as to be adjacent to each other via a separation region that stretches in the thickness direction of the semiconductor layer; a transistor provided for each of the photoelectric conversion regions on the side of the first surface of the semiconductor layer; and a transparent electrode which is provided on the side of the second surface of the semiconductor layer and to which a potential is applied. In addition, the separation region includes a conductor which stretches in the thickness direction of the semiconductor layer and the conductor is electrically connected on the side of the second surface of the semiconductor layer to the transparent electrode.

Abstract: To suppress blooming. A solid-state imaging device includes: a photoelectric converter that generates a charge according to an amount of received light; and a discharge path portion that is disposed between the photoelectric converter and a discharge destination of the charge and through which the charge overflowing from the photoelectric converter passes.

Abstract: The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a plurality of pixel blocks each including a plurality of light-receiving pixels including color filters of same color, the plurality of light-receiving pixels being divided into a plurality of first pixel pairs each including two light-receiving pixels adjacent to each other in a first direction; a plurality of lenses provided at respective positions corresponding to the plurality of first pixel pairs; and a plurality of floating diffusion layers each disposed at a boundary between the two light-receiving pixels, of the plurality of first pixel pairs, adjacent to each other in the first direction, the plurality of floating diffusion layers each shared in the plurality of first pixel pairs.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.

Abstract: A photodetector including: an amplification region that includes a PN junction provided in a depth direction in a semiconductor layer and that is to be electrically coupled to a cathode; a separation region that defines a pixel region including the amplification region; a hole accumulation region that is provided along a side surface of the separation region and that is to be electrically coupled to an anode; and a gate electrode provided in a region between the amplification region and the hole accumulation region and stacked over the semiconductor layer with a gate insulating film interposed therebetween.

Abstract: According to the present invention, a wind power generation system includes: a wind power generation apparatus including a blade that rotates by receiving wind, a main shaft that transmits rotational energy of the blade, and a generator that converts the rotational energy into electricity; and a building in which the wind power generation apparatus is installed, in which the building includes a corner portion having a chamfered shape and two wall surfaces adjacent to the corner portion, and the blade is installed in an installation region including the corner portion and a surface having each of the two wall surfaces adjacent to the corner portion.